公开(公告)号：US20110180808A1

公开(公告)日：2011-07-28

申请号：US12695983

申请日：2010-01-28

Applicant: David F. Abdo ,  Monte G. Miller ,  Lakshminarayan Viswanathan

Inventor： David F. Abdo ,  Monte G. Miller ,  Lakshminarayan Viswanathan

IPC: H01L31/0312 ,  H01L21/00

CPC classification number: H01L24/29 ,  H01L23/3736 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/157 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/01006 ,  H01L2924/00015 ,  H01L2924/00014

Abstract: A method of making a mounted gallium nitride (GaN) device includes obtaining a device structure comprising a silicon layer, a silicon carbide (SiC) layer over the silicon layer, and a GaN layer over the SiC layer. The GaN layer is processed to form an active layer of active devices and interconnect over the GaN layer. After the step of processing the GaN layer, a gold layer is formed on the silicon layer. The device structure is attached to a heat sink structure using the gold layer. The mounted GaN device includes the SiC layer over the polysilicon layer and the GaN layer over the SiC layer. The active layer is over the GaN layer.

Abstract translation: 制造安装的氮化镓（GaN）器件的方法包括获得包括硅层上的硅层，碳化硅（SiC）层以及SiC层上的GaN层的器件结构。 处理GaN层以形成有源器件的有源层并在GaN层上互连。 在处理GaN层的步骤之后，在硅层上形成金层。 该装置结构使用金层连接到散热器结构。 安装的GaN器件包括多晶硅层上的SiC层和SiC层上的GaN层。 有源层在GaN层之上。

公开(公告)号：US20070090514A1

公开(公告)日：2007-04-26

申请号：US11257783

申请日：2005-10-24

Applicant: Brian Condie ,  Lakshminarayan Viswanathan ,  Richard Wetz

Inventor： Brian Condie ,  Lakshminarayan Viswanathan ,  Richard Wetz

IPC: H01L23/12

CPC classification number: H01L23/13 ,  H01L23/10 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45111 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/01025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor structure (100) includes a substrate (110) having a first surface (111) with a mold lock feature (101). The semiconductor structure also includes a semiconductor chip (120) located over the first surface of the substrate. The semiconductor structure further includes an electrical isolator structure (340) located over the first surface of the substrate. The electrical isolator structure includes an electrical lead (341, 342) and an electrically insulative element (343) molded to the electrical lead. An optional portion (444) of the electrical isolator structure is located in the mold lock feature. The semiconductor structure additionally includes an adhesive element (450) located between and coupling the electrical isolator structure and the first surface of the substrate.

Abstract translation: 半导体结构（100）包括具有模具锁定特征（101）的第一表面（111）的基板（110）。 半导体结构还包括位于衬底的第一表面上方的半导体芯片（120）。 半导体结构还包括位于衬底的第一表面上方的电隔离器结构（340）。 电隔离器结构包括电引线（341,342）和模制到电引线上的电绝缘元件（343）。 电隔离器结构的可选部分（444）位于模具锁定特征中。 半导体结构还包括位于电隔离器结构和衬底的第一表面之间的耦合的粘合元件（450）。

公开(公告)号：US06724079B2

公开(公告)日：2004-04-20

申请号：US10039800

申请日：2002-01-04

Applicant: Lakshminarayan Viswanathan ,  Pierre-Marie Piel ,  Garry D. Funk ,  Robert Paul Davidson

Inventor： Lakshminarayan Viswanathan ,  Pierre-Marie Piel ,  Garry D. Funk ,  Robert Paul Davidson

IPC: H01L2312

CPC classification number: H01L23/10 ,  H01L23/053 ,  H01L23/66 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/16152 ,  H01L2924/16315 ,  H01L2924/3011

Abstract: A wire bond-less electronic component is for use with a circuit external to the wire bond-less electronic component. The wire bond-less electronic component includes a support substrate (110, 410), an electronic device (130) over the support substrate, and a cover (140, 440, 540) located over the electronic device and the support substrate. The cover includes an interconnect structure (141, 441, 541) electrically coupled to the electronic device and adapted to electrically couple together the electronic device and the circuit for providing impedance transformation of an electrical signal between the electronic device and the circuit.

Abstract translation: 无接线电子元件用于无引线接合电子元件外部的电路。 无引线接合电子部件包括支撑基板（110,410），位于支撑基板上的电子器件（130）以及位于电子器件和支撑基板上的盖子（140,440,540）。 所述盖包括电连接到所述电子设备并且适于将所述电子设备和所述电路电连接在一起以在所述电子设备和所述电路之间提供电信号的阻抗变换的互连结构（141,441,541）。