摘要:
A process for producing a polyphenol diester comprises esterifying a polyphenol compound and a naphthoquinone-1,2-diazidesulfonyl halide in the presence of for example monomethyldicyclohexylamine, and a positive photosensitive composition contains the resultant ester. According to this process, a diester of any polyphenol compound can be obtained with ease in a good yield, and a composition using the diester can achieve a high definition and a satisfactory exposure margin.
摘要:
The present invention provides a positive photoresist composition exhibiting superior sensitivity, definition and thermostability, and in addition, having excellent focal depth range properties. The positive photoresist composition comprises (A) an alkali-soluble resin; (B) a quinonediazide group-containing compound; and (C), for example, bis(4-hydroxy-2,3,5-trimethylphenyl)-2-hydroxyphenylmethane.
摘要:
Disclosed is an improved positive-working photoresist composition comprising an alkali-soluble resin as a film-forming agent and a quinone diazide group-containing compound as a photosensitive agent. The most characteristic feature of the inventive composition consists in the unique formulation of the alkali-soluble resin which is a combination of two or three kinds of novolac resins selected from novolac resins (a), (b1) or (b2) and (c1) or (c2), each of which is characterized by the unique formulation of the phenolic compounds as a mixture to be subjected to a condensation reaction with an aldehyde compound to form the novolac resin. Namely, the phenolic mixture for the novolac (a) consists of m- and p-cresols, the phenolic mixture for the novolac (b1) consists of m-cresol and a xylenol, the phenolic mixture for the novolac (b2) consists of m- and p-cresols and a xylenol, the phenolic mixture for the novolac (c1) consists of m-cresol and a trimethyl phenol and the phenolic mixture for the novolac (c2) consists of m- and p-cresols and a trimethyl phenol each in a specified molar proportion of the constituent phenolic compounds.
摘要:
Proposed is an alkali-soluble, positive-working photosensitive resin composition which can be used as a material for forming a finely patterned resist layer on the surface of a metallic substrate such as tantalum to exhibit excellent adhesion of the patterned resist layer to the substrate surface. The composition comprises, in addition to a novolac resin as a film-forming agent and a naphthoquinone diazide group-containing compound as a photosensitizer, an aromatic compound having two benzene rings and at least five phenolic hydroxy groups in a molecule such as pentahydroxy and hexahydroxy benzophenone compounds as an adhesion improver.
摘要:
A positive photoresist composition includes (A) an alkali-soluble resin, (B) a photosensitizer including, for example, a quinonediazide ester of bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane, and (C) a compound having a gram absorption coefficient of 5 to 60 with respect to light with a wavelength of 365 nm.
摘要:
A positive photoresist composition includes (A) an alkali-soluble resin, in which part of phenolic hydroxyl groups is protected by an acid-decomposable group; (B) a quinonediazide ester; and (C) a compound which generates an acid upon irradiation of light with a wavelength of 365 nm. This positive photoresist composition can form a fine pattern of about 0.35 &mgr;m in the photolithographic process using i-ray (365 nm), is excellent in focal depth range properties in such an ultrafine region, and has a high sensitivity.
摘要:
A positive photoresist composition comprising (A) an alkali-soluble resin and (B) a light-sensitive component comprising at least one compound represented by the following general formula (I): ##STR1## where R.sup.1, R.sup.2 and R.sup.3 are each independently a hydrogen atom, an alkyl group having 1-3 carbon atoms or an alkoxy group having 1-3 carbon atoms; R.sup.4 is a hydrogen atom or an alkyl group having 1-3 carbon atoms; a, b and c are an integer of 1-3; l, m and n are an integer of 1-3, in which at least part of the hydroxyl groups present are esterified with a quinonediazidosulfonic acid and a sulfonic acid which has a group represented by the following formula (II): --SO.sub.2 --R.sup.5 (II) where R.sup.5 is a substituted or unsubstituted alkyl group, an alkenyl group or a substituted or unsubstituted aryl group, thereby forming a mixed ester, and a multilayer resist material in which a positive photoresist layer formed of said positive photoresist composition is provided on an anti-reflective coating over a substrate are capable of forming high-resolution resist patterns with good cross-sectional profiles and permit a wider margin of exposure and better depth-of-focus characteristics.
摘要:
Proposed is an improved positive-working photoresist composition for use in the photolithographic patterning works for the manufacture of semiconductor devices, which is capable of giving a patterned resist layer on a substrate surface having excellent resolution and heat resistance without formation of scum in the development treatment. The photoresist composition comprises: (a) an alkali-soluble novolac resin as a film-forming ingredient and (b) a naphthoquinone diazide group-containing compound as a photosensitizing ingredient, of which the novolac resin is a condensation product of a phenolic compound and an aldehyde compound, the condensation reaction being undertaken in a solvent system containing, in addition to water, .gamma.-butyrolactone or a combination of .gamma.-butyrolactone and a propyleneglycol monoalkyl ether in a limited proportion.
摘要:
A positive-working photoresist composition comprising a cresol novolac resin as the film-forming agent and a quinonediazido group-containing compound as the photosensitizing agent is admixed with a limited amount of a hydroxyalkyl-substituted pyridine compound so that great improvements can be obtained in the adhesive bonding of the resist layer to the substrate surface and in the stability of the composition by storage still without the problem due to the sublimed material from the resist layer during the patterning process.
摘要:
Disclosed is a positive-working photoresist composition suitable for use in the photolithographic fine patterning work in the manufacture of electronic devices such as VLSIs. The composition comprises, in addition to an alkali-soluble novolac resin as a film-forming ingredient and an esterification product of naphthoquinone-1,2-diazide sulfonic acid as a photosensitive ingredient, a unique additive compound which is an alkyl or aralkyl ester of 2-hydroxy benzoic acid, such as benzyl salicylate, or a phenol compound substituted at least one alkyl group such as 2-tert-butyl-4-methyl phenol. By virtue of the addition of this unique additive, the inventive photoresist composition exhibits an excellent performance of suppressing the standing wave effect in addition to the excellent photosensitivity, resolving power and depth of focusing in the patterning exposure to light as well as good heat resistance of the patterned resist layer.