Production process of polyphenol diesters, and positive photosensitive
compositions
    41.
    发明授权
    Production process of polyphenol diesters, and positive photosensitive compositions 失效
    多酚二酯的生产工艺和正性光敏组合物

    公开(公告)号:US6106994A

    公开(公告)日:2000-08-22

    申请号:US210716

    申请日:1998-12-14

    CPC分类号: C07C303/28 G03F7/022

    摘要: A process for producing a polyphenol diester comprises esterifying a polyphenol compound and a naphthoquinone-1,2-diazidesulfonyl halide in the presence of for example monomethyldicyclohexylamine, and a positive photosensitive composition contains the resultant ester. According to this process, a diester of any polyphenol compound can be obtained with ease in a good yield, and a composition using the diester can achieve a high definition and a satisfactory exposure margin.

    摘要翻译: 一种生产多酚二酯的方法包括在例如单甲基二环己基胺的存在下酯化多酚化合物和萘醌-1,2-二氮杂磺酰卤,并且正性感光组合物含有所得的酯。 根据该方法,可以容易地以良好的收率获得任何多酚化合物的二酯,并且使用二酯的组合物可以实现高清晰度和令人满意的曝光余量。

    High-sensitivity positive-working photoresist composition
    43.
    发明授权
    High-sensitivity positive-working photoresist composition 失效
    高灵敏度正性光刻胶组合物

    公开(公告)号:US5601961A

    公开(公告)日:1997-02-11

    申请号:US412889

    申请日:1995-03-29

    CPC分类号: C08G8/08 G03F7/0236

    摘要: Disclosed is an improved positive-working photoresist composition comprising an alkali-soluble resin as a film-forming agent and a quinone diazide group-containing compound as a photosensitive agent. The most characteristic feature of the inventive composition consists in the unique formulation of the alkali-soluble resin which is a combination of two or three kinds of novolac resins selected from novolac resins (a), (b1) or (b2) and (c1) or (c2), each of which is characterized by the unique formulation of the phenolic compounds as a mixture to be subjected to a condensation reaction with an aldehyde compound to form the novolac resin. Namely, the phenolic mixture for the novolac (a) consists of m- and p-cresols, the phenolic mixture for the novolac (b1) consists of m-cresol and a xylenol, the phenolic mixture for the novolac (b2) consists of m- and p-cresols and a xylenol, the phenolic mixture for the novolac (c1) consists of m-cresol and a trimethyl phenol and the phenolic mixture for the novolac (c2) consists of m- and p-cresols and a trimethyl phenol each in a specified molar proportion of the constituent phenolic compounds.

    摘要翻译: 公开了一种改进的正性光致抗蚀剂组合物,其包含作为成膜剂的碱溶性树脂和含醌二叠氮基的化合物作为感光剂。 本发明组合物最具特色的特征在于碱溶性树脂的独特配方,其是选自酚醛清漆树脂(a),(b1)或(b2)和(c1)中的两种或三种酚醛清漆树脂的组合, 或(c2),其各自的特征在于酚类化合物作为与醛化合物进行缩合反应以形成酚醛清漆树脂的混合物的独特配方。 即,酚醛清漆(a)的酚类混合物由间甲酚和对甲酚组成,酚醛清漆(b1)的酚类混合物由间甲酚和二甲苯酚组成,酚醛清漆(b2)的酚类混合物由 - 酚甲酚和二甲苯酚,酚醛清漆(c1)的酚类混合物由间甲酚和三甲酚组成,酚醛清漆(c2)的酚类混合物由间甲苯酚和对甲酚和三甲酚组成 以规定摩尔比例的组成酚类化合物。

    Positive photoresist compositions and multilayer resist materials using
the same
    47.
    发明授权
    Positive photoresist compositions and multilayer resist materials using the same 失效
    正型光致抗蚀剂组合物和使用其的多层抗蚀剂材料

    公开(公告)号:US5728504A

    公开(公告)日:1998-03-17

    申请号:US652389

    申请日:1996-05-23

    CPC分类号: G03F7/022

    摘要: A positive photoresist composition comprising (A) an alkali-soluble resin and (B) a light-sensitive component comprising at least one compound represented by the following general formula (I): ##STR1## where R.sup.1, R.sup.2 and R.sup.3 are each independently a hydrogen atom, an alkyl group having 1-3 carbon atoms or an alkoxy group having 1-3 carbon atoms; R.sup.4 is a hydrogen atom or an alkyl group having 1-3 carbon atoms; a, b and c are an integer of 1-3; l, m and n are an integer of 1-3, in which at least part of the hydroxyl groups present are esterified with a quinonediazidosulfonic acid and a sulfonic acid which has a group represented by the following formula (II): --SO.sub.2 --R.sup.5 (II) where R.sup.5 is a substituted or unsubstituted alkyl group, an alkenyl group or a substituted or unsubstituted aryl group, thereby forming a mixed ester, and a multilayer resist material in which a positive photoresist layer formed of said positive photoresist composition is provided on an anti-reflective coating over a substrate are capable of forming high-resolution resist patterns with good cross-sectional profiles and permit a wider margin of exposure and better depth-of-focus characteristics.

    摘要翻译: 一种正性光致抗蚀剂组合物,其包含(A)碱溶性树脂和(B)包含至少一种由以下通式(I)表示的化合物的光敏性组分:其中R 1,R 2和R 3是 各自独立地为氢原子,具有1-3个碳原子的烷基或具有1-3个碳原子的烷氧基; R4是氢原子或具有1-3个碳原子的烷基; a,b和c为1-3的整数; l,m和n是1-3的整数,其中存在的羟基的至少一部分与醌二叠氮磺酸和具有下式(II)表示的基团的磺酸酯化:-SO 2 -R 5 (II)其中R5是取代或未取代的烷基,烯基或取代或未取代的芳基,从而形成混合酯,以及多层抗蚀剂材料,其中由所述正性光致抗蚀剂组合物形成的正性光致抗蚀剂层设置在 衬底上的抗反射涂层能够形成具有良好横截面轮廓的高分辨率抗蚀剂图案,并允许更宽的曝光余量和更好的聚焦深度特性。

    Positive-working photoresist composition comprising a novolac resin made
in butyrolactone as a solvent
    48.
    发明授权
    Positive-working photoresist composition comprising a novolac resin made in butyrolactone as a solvent 失效
    正性光致抗蚀剂组合物,其包含在丁内酯作为溶剂制备的酚醛清漆树脂

    公开(公告)号:US5604077A

    公开(公告)日:1997-02-18

    申请号:US603601

    申请日:1996-02-21

    CPC分类号: G03F7/0236 C08G8/08

    摘要: Proposed is an improved positive-working photoresist composition for use in the photolithographic patterning works for the manufacture of semiconductor devices, which is capable of giving a patterned resist layer on a substrate surface having excellent resolution and heat resistance without formation of scum in the development treatment. The photoresist composition comprises: (a) an alkali-soluble novolac resin as a film-forming ingredient and (b) a naphthoquinone diazide group-containing compound as a photosensitizing ingredient, of which the novolac resin is a condensation product of a phenolic compound and an aldehyde compound, the condensation reaction being undertaken in a solvent system containing, in addition to water, .gamma.-butyrolactone or a combination of .gamma.-butyrolactone and a propyleneglycol monoalkyl ether in a limited proportion.

    摘要翻译: 提出了一种用于制造半导体器件的光刻图案化工艺中的改进的正性光致抗蚀剂组合物,其能够在显影处理中不形成浮渣的情况下在具有优异的分辨率和耐热性的基板表面上形成图案化的抗蚀剂层 。 光致抗蚀剂组合物包括:(a)作为成膜成分的碱溶性酚醛清漆树脂和(b)含萘醌二叠氮基的化合物作为光敏成分,其中酚醛清漆树脂是酚类化合物和 醛化合物,缩合反应在除水中的γ-丁内酯或γ-丁内酯和丙二醇单烷基醚的组合之外还含有有限的比例进行。

    Positive-working naphthoquinone diazide photoresist composition
containing specific hydroxy compound additive
    50.
    发明授权
    Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive 失效
    含有特定羟基化合物添加剂的正性萘醌二叠氮光致抗蚀剂组合物

    公开(公告)号:US5434031A

    公开(公告)日:1995-07-18

    申请号:US153100

    申请日:1993-11-17

    IPC分类号: G03C1/61 G03F7/022 G03F7/023

    CPC分类号: G03F7/0226 G03C1/61

    摘要: Disclosed is a positive-working photoresist composition suitable for use in the photolithographic fine patterning work in the manufacture of electronic devices such as VLSIs. The composition comprises, in addition to an alkali-soluble novolac resin as a film-forming ingredient and an esterification product of naphthoquinone-1,2-diazide sulfonic acid as a photosensitive ingredient, a unique additive compound which is an alkyl or aralkyl ester of 2-hydroxy benzoic acid, such as benzyl salicylate, or a phenol compound substituted at least one alkyl group such as 2-tert-butyl-4-methyl phenol. By virtue of the addition of this unique additive, the inventive photoresist composition exhibits an excellent performance of suppressing the standing wave effect in addition to the excellent photosensitivity, resolving power and depth of focusing in the patterning exposure to light as well as good heat resistance of the patterned resist layer.

    摘要翻译: 公开了一种适用于制造诸如VLSI的电子设备的光刻精细图案化工作中的正性光致抗蚀剂组合物。 除了作为成膜成分的碱溶性酚醛清漆树脂和萘醌-1,2-二叠氮磺酸作为感光成分的酯化产物之外,组合物还包含作为感光成分的独特的添加剂化合物,其为烷基或芳烷基酯 2-羟基苯甲酸,如水杨酸苄酯,或取代至少一个烷基的酚化合物如2-叔丁基-4-甲基苯酚。 通过添加这种独特的添加剂,本发明的光致抗蚀剂组合物除了在图案曝光中具有优异的光敏性,分辨能力和聚焦深度以及良好的耐热性外,还表现出优异的抑制驻波效应的性能 图案化的抗蚀剂层。