Vapor deposition material
    43.
    发明授权
    Vapor deposition material 失效
    气相沉积材料

    公开(公告)号:US06395381B1

    公开(公告)日:2002-05-28

    申请号:US09573203

    申请日:2000-05-19

    IPC分类号: B32B522

    摘要: Objects of the invention are to provide a novel vapor deposition material for coating from which a thermal barrier coating film excellent in heat resistance and thermal shock resistance can be satisfactorily formed even by the EB-PVD method, and to provide a method of vapor deposition in which the vapor deposition material is used. The vapor deposition material comprises a zirconia sintered body containing a stabilizer, wherein the sintered body has a content of monoclinic crystals of from 25 to 90% and has a maximum thermal expansion ratio not exceeding 6×10−3 based on room temperature when heated in the temperature range of from room temperature to 1,200° C. This zirconia sintered body preferably has a tapped density of from 3.0 to 5.5 g/cm3, a porosity of from 5 to 50%, and a mode size of pores of from 0.3 to 10 &mgr;m, and in the sintered body the volume of pores of from 0.1 to 10 &mgr;m preferably accounts for at least 90% of the total pore volume. The vapor deposition method uses this vapor deposition material.

    摘要翻译: 本发明的目的是提供一种新型的用于涂层的气相沉积材料,即使通过EB-PVD方法也可令人满意地形成耐热性和耐热冲击性优异的热障涂层,并提供一种蒸镀方法 使用气相沉积材料。 蒸镀材料包含含有稳定剂的氧化锆烧结体,其特征在于,烧结体的单斜晶体含量为25〜90%,当温度加热时,其室温下的最大热膨胀率不超过6×10 -3 该氧化锆烧结体优选具有3.0〜5.5g / cm 3的孔隙密度,5〜50%的孔隙率和0.3〜10μm的孔径模式尺寸, 并且在烧结体中,0.1〜10μm的孔的体积优选占总孔体积的至少90%。 蒸镀法使用该蒸镀材料。

    Damper mechanism having a friction generating mechanism
    45.
    发明授权
    Damper mechanism having a friction generating mechanism 失效
    具有摩擦发生机构的阻尼机构

    公开(公告)号:US5899812A

    公开(公告)日:1999-05-04

    申请号:US938560

    申请日:1997-09-26

    CPC分类号: F16F15/129

    摘要: A clutch disc assembly (1) includes a hub (2), a separate flange (5), a retaining plate (3), a clutch plate (4), a first bushing (16), a second bushing (18) and a third bushing (20). The first bushing (16) is disposed between the hub (2) and the retaining plate (3) and slidably moves against them. The second bushing (18) has a friction coefficient different from that of the first bushing (16). The second bushing (18) is disposed between the separate flange (5) and the retaining plate (3) and slidably moves against them. The friction coefficient of a portion facing to the hub (2) of the third bushing (20) is substantially identical with that of the first bushing (16), while the friction coefficient of a portion facing to the separate flange (5) of the third bushing (20) is identical with that of the second bushing (18). The third bushing (20) is disposed between the hub (2), the separate flange (5), and the clutch plate 4, and slidably moves against them.

    摘要翻译: 离合器盘组件(1)包括轮毂(2),分离的凸缘(5),保持板(3),离合器板(4),第一衬套(16),第二衬套(18)和 第三衬套(20)。 第一衬套(16)设置在轮毂(2)和保持板(3)之间并且可滑动地抵靠它们移动。 第二衬套(18)的摩擦系数与第一衬套(16)的摩擦系数不同。 第二衬套(18)设置在分离的凸缘(5)和保持板(3)之间并且可滑动地抵靠它们移动。 面向第三衬套(20)的轮毂(2)的部分的摩擦系数与第一衬套(16)的摩擦系数基本相同,而面向第一衬套(20)的单独凸缘(5)的部分的摩擦系数 第三衬套(20)与第二衬套(18)的相同。 第三衬套(20)设置在轮毂(2),分离凸缘(5)和离合器板4之间,并且可滑动地抵靠它们移动。

    Process for preparing high-purity .alpha.-type silicon nitride
    46.
    发明授权
    Process for preparing high-purity .alpha.-type silicon nitride 失效
    制备高纯度α型氮化硅的方法

    公开(公告)号:US4346068A

    公开(公告)日:1982-08-24

    申请号:US222671

    申请日:1981-01-05

    IPC分类号: C01B21/068

    摘要: High-purity .alpha.-type silicon nitride comprised of a granular crystal having an .alpha.-phase content of at least 95%, a nitrogen content of at least 38% by weight and an average particle size of not larger than 3 .mu.m is provided. This high-purity .alpha.-type silicon nitride is prepared by heating a nitrogen-containing silane compound at a temperature of at least about 1,300.degree. C. in a heating furnace comprised of a material containing a metal having a melting point exceeding 1,600.degree. C. and capable of being bonded with oxygen at the heating temperature.

    摘要翻译: 提供了由具有至少95%的α-相含量,至少38重量%的氮含量和不大于3μm的平均粒径的粒状晶体构成的高纯度α型氮化硅。 这种高纯度α型氮化硅通过在包含熔点超过1600℃的金属的加热炉中在至少约1300℃的温度下加热含氮硅烷化合物来制备。 并且能够在加热温度下与氧结合。

    BATTERY CHARGER AND BATTERY CHARGER ATTACHING STRUCTURE
    48.
    发明申请
    BATTERY CHARGER AND BATTERY CHARGER ATTACHING STRUCTURE 有权
    电池充电器和电池充电器连接结构

    公开(公告)号:US20120176086A1

    公开(公告)日:2012-07-12

    申请号:US13393530

    申请日:2009-09-15

    IPC分类号: H02J7/00

    摘要: Provided are a battery charger, which is a different body from a vehicle and the durability, performance, etc., of which are maintained, and a battery charger attaching structure. The battery charger attaching structure comprises: a battery; a battery charger being a different body from a vehicle and charging the battery; an electric motor for generating driving force on the basis of the power supplied from the battery; vehicle covers for covering the vehicle; and an attachment portion provided on the vehicle covers and used for attaching the battery charger on the side of the vehicle. The attachment portion is provided at an upper part on a leg shield.

    摘要翻译: 提供了一种电池充电器,其是与车辆不同的主体以及其保持的耐久性,性能等,以及电池充电器附接结构。 电池充电器附接结构包括:电池; 电池充电器是与车辆不同的身体并对电池充电; 电动马达,用于根据从电池提供的电力产生驱动力; 用于覆盖车辆的车辆盖; 并且设置在车辆上的安装部分覆盖并用于将电池充电器安装在车辆侧面。 附接部设置在腿部护罩的上部。

    Semiconductor device and method of manufacturing semiconductor device
    49.
    发明申请
    Semiconductor device and method of manufacturing semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号:US20100112770A1

    公开(公告)日:2010-05-06

    申请号:US12588931

    申请日:2009-11-03

    申请人: Yoshitaka Kubota

    发明人: Yoshitaka Kubota

    IPC分类号: H01L21/336

    摘要: The invention provides a method of manufacturing a semiconductor device including a non-volatile memory with high yield, and a semiconductor device manufactured by the method. A method of manufacturing a semiconductor device includes a process of forming a second side wall such that the width of the second side wall, which is formed on the side of a portion of a second gate electrode that does not face dummy gates on a drain forming region side, in a gate length direction is larger than that of the second side wall, which is formed on the side of the second gate electrode on a source forming region side, in the gate length direction, in a non-volatile memory forming region.

    摘要翻译: 本发明提供了一种制造包括具有高产率的非易失性存储器的半导体器件的方法以及通过该方法制造的半导体器件。 一种制造半导体器件的方法包括形成第二侧壁的工艺,使得形成在第二栅电极的不在漏极形成上的虚拟栅极的一侧的一侧上的第二侧壁的宽度 在栅极长度方向上的栅极长度方向的栅极长度方向上的栅极长度方向上的栅极长度方向上的栅极长度方向上的栅极长度方向上的栅极长度方向上的栅极长度方向上, 。

    Abrasive member, abrasive disc provided with same, and polishing process
    50.
    发明授权
    Abrasive member, abrasive disc provided with same, and polishing process 失效
    研磨部件,与其相同的研磨盘,以及抛光工序

    公开(公告)号:US06361403B1

    公开(公告)日:2002-03-26

    申请号:US09465264

    申请日:1999-12-17

    IPC分类号: B24B100

    CPC分类号: B24B37/11 B24D3/28 B24D13/14

    摘要: An abrasive member made of a silica molding predominantly comprised of silica is described. The abrasive member has a bulk density of 0.2 to 1.5 g/cm3, a BET specific surface area of 10 to 400 m2/g, an average particle diameter of 0.001 to 0.5 &mgr;m, and a multiplicity of interconnecting minute pores which are open to the exterior. A solid soluble in a polishing liquid is made present within the minute pores of the silica molding. The abrasive member is fixed or fitted to a supporting auxiliary to be assembled into an abrasive disc. The abrasive disc is used for polishing a material to be polished, by rubbing the material to be polished therewith while at least one of the abrasive disc and the material to be polished is moved and while a polishing liquid is applied to the abrasive disc.

    摘要翻译: 描述了由主要由二氧化硅组成的二氧化硅模制件制成的磨料构件。 研磨部件的体积密度为0.2〜1.5g / cm 3,BET比表面积为10〜400m2 / g,平均粒径为0.001〜0.5μm,多个相互连接的细孔 外观。 在二氧化硅成型体的细孔中存在可溶于抛光液的固体。 研磨构件固定或装配到支撑辅助件上以组装成研磨盘。 研磨盘用于通过在研磨盘和待抛光材料中的至少一个移动并且抛光液体被施加到研磨盘的同时摩擦待抛光材料来抛光待抛光材料。