摘要:
Objects of the invention are to provide a novel vapor deposition material for coating from which a thermal barrier coating film excellent in heat resistance and thermal shock resistance can be satisfactorily formed even by the EB-PVD method, and to provide a method of vapor deposition in which the vapor deposition material is used. The vapor deposition material comprises a zirconia sintered body containing a stabilizer, wherein the sintered body has a content of monoclinic crystals of from 25 to 90% and has a maximum thermal expansion ratio not exceeding 6×10−3 based on room temperature when heated in the temperature range of from room temperature to 1,200° C. This zirconia sintered body preferably has a tapped density of from 3.0 to 5.5 g/cm3, a porosity of from 5 to 50%, and a mode size of pores of from 0.3 to 10 &mgr;m, and in the sintered body the volume of pores of from 0.1 to 10 &mgr;m preferably accounts for at least 90% of the total pore volume. The vapor deposition method uses this vapor deposition material.
摘要翻译:本发明的目的是提供一种新型的用于涂层的气相沉积材料,即使通过EB-PVD方法也可令人满意地形成耐热性和耐热冲击性优异的热障涂层,并提供一种蒸镀方法 使用气相沉积材料。 蒸镀材料包含含有稳定剂的氧化锆烧结体,其特征在于,烧结体的单斜晶体含量为25〜90%,当温度加热时,其室温下的最大热膨胀率不超过6×10 -3 该氧化锆烧结体优选具有3.0〜5.5g / cm 3的孔隙密度,5〜50%的孔隙率和0.3〜10μm的孔径模式尺寸, 并且在烧结体中,0.1〜10μm的孔的体积优选占总孔体积的至少90%。 蒸镀法使用该蒸镀材料。
摘要:
A molded abrasive product which is made mainly of a zirconia component and which has a bulk density of from 0.5 to 5.2 g/cm3, a BET specific surface area of from 0.1 to 100 m2/g and an average particle size of from 0.005 to 50 &mgr;m.
摘要:
A clutch disc assembly (1) includes a hub (2), a separate flange (5), a retaining plate (3), a clutch plate (4), a first bushing (16), a second bushing (18) and a third bushing (20). The first bushing (16) is disposed between the hub (2) and the retaining plate (3) and slidably moves against them. The second bushing (18) has a friction coefficient different from that of the first bushing (16). The second bushing (18) is disposed between the separate flange (5) and the retaining plate (3) and slidably moves against them. The friction coefficient of a portion facing to the hub (2) of the third bushing (20) is substantially identical with that of the first bushing (16), while the friction coefficient of a portion facing to the separate flange (5) of the third bushing (20) is identical with that of the second bushing (18). The third bushing (20) is disposed between the hub (2), the separate flange (5), and the clutch plate 4, and slidably moves against them.
摘要:
High-purity .alpha.-type silicon nitride comprised of a granular crystal having an .alpha.-phase content of at least 95%, a nitrogen content of at least 38% by weight and an average particle size of not larger than 3 .mu.m is provided. This high-purity .alpha.-type silicon nitride is prepared by heating a nitrogen-containing silane compound at a temperature of at least about 1,300.degree. C. in a heating furnace comprised of a material containing a metal having a melting point exceeding 1,600.degree. C. and capable of being bonded with oxygen at the heating temperature.
摘要:
Provided are a battery charger, which is a different body from a vehicle and the durability, performance, etc., of which are maintained, and a battery charger attaching structure. The battery charger attaching structure comprises: a battery; a battery charger being a different body from a vehicle and charging the battery; an electric motor for generating driving force on the basis of the power supplied from the battery; vehicle covers for covering the vehicle; and an attachment portion provided on the vehicle covers and used for attaching the battery charger on the side of the vehicle. The attachment portion is provided at an upper part on a leg shield.
摘要:
The invention provides a method of manufacturing a semiconductor device including a non-volatile memory with high yield, and a semiconductor device manufactured by the method. A method of manufacturing a semiconductor device includes a process of forming a second side wall such that the width of the second side wall, which is formed on the side of a portion of a second gate electrode that does not face dummy gates on a drain forming region side, in a gate length direction is larger than that of the second side wall, which is formed on the side of the second gate electrode on a source forming region side, in the gate length direction, in a non-volatile memory forming region.
摘要:
An abrasive member made of a silica molding predominantly comprised of silica is described. The abrasive member has a bulk density of 0.2 to 1.5 g/cm3, a BET specific surface area of 10 to 400 m2/g, an average particle diameter of 0.001 to 0.5 &mgr;m, and a multiplicity of interconnecting minute pores which are open to the exterior. A solid soluble in a polishing liquid is made present within the minute pores of the silica molding. The abrasive member is fixed or fitted to a supporting auxiliary to be assembled into an abrasive disc. The abrasive disc is used for polishing a material to be polished, by rubbing the material to be polished therewith while at least one of the abrasive disc and the material to be polished is moved and while a polishing liquid is applied to the abrasive disc.