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    High-strength zirconia type sintered body and process for preparation thereof
    1.
    发明授权
    High-strength zirconia type sintered body and process for preparation thereof 失效
    高强度氧化锆型烧结体及其制备方法

    公开(公告)号：US4774041A

    公开(公告)日：1988-09-27

    申请号：US704037

    申请日：1985-02-21

    申请人： Koji Tsukuma ,  Kuniyoshi Ueda ,  Takaaki Tsukidate

    发明人： Koji Tsukuma ,  Kuniyoshi Ueda ,  Takaaki Tsukidate

    IPC分类号： C04B35/488 ,  C04B35/645 ,  C04B35/48

    CPC分类号： C04B35/6455 ,  C04B35/488 ,  C04B35/4885

    摘要： A zirconia type sintered body consisting essentially of 50 to 98% by weight of zirconia (ZrO.sub.2) containing 1.5 to 5 mole % of yttria (Y.sub.2 O.sub.3) and 50 to 2% by weight of alumina (Al.sub.2 O.sub.3), spinal (MgAl.sub.2 O.sub.4) or mullite (3Al.sub.2 O.sub.3.2SiO.sub.2), and having a three-point bending strength of at least 1700 MPa is provided. This sintered body is prepared by a process wherein a powdery composition consisting essentially of 50 to 98% by weight of (a1) a powder of zirconia containing 1.5 to 5 mole % of yttria or (a2) a mixture comprising 1.5 to 5 mole % of yttria powder and 95 to 98.5 mole % of a zirconia powder and 2 to 50% by weight of (b) a powder of an alumina type oxide selected from alumina, and alumina-magnesia type oxide, an alumina-silica type oxide, a mixture of alumina and magnesia and a mixture of alumina and silica is subjected to a hot isotactic pressing treatment under a pressure of at least 50 MPa at temperature of 1300.degree. C. to 1700.degree. C. or a monoaxially compression-sintering treatment under a pressure of at least 20 MPa at a temperature of 1400.degree. C. to 1700.degree. C.

    Process for preparation of high .alpha.-type silicon nitride powder
    4.
    发明授权
    Process for preparation of high .alpha.-type silicon nitride powder 失效
    高α型氮化硅粉末的制备方法

    公开(公告)号：US4770830A

    公开(公告)日：1988-09-13

    申请号：US943624

    申请日：1986-12-18

    申请人： Toshihiko Arakawa ,  Kuniyoshi Ueda ,  Naomichi Sakai ,  Takaaki Tsukidate

    发明人： Toshihiko Arakawa ,  Kuniyoshi Ueda ,  Naomichi Sakai ,  Takaaki Tsukidate

    IPC分类号： C01B21/068 ,  C01B33/06

    CPC分类号： B82Y30/00 ,  C01B21/0687 ,  C01P2004/50 ,  C01P2004/64 ,  C01P2006/10

    摘要： Disclosed is a process for the preparation of high .alpha.-type silicon nitride powder, wherein a nitrogen-containing silane compound and/or amorphous silicon nitride is crystallized to form crystalline silicon nitride. In this process, crystalline silicon nitride having a particle size not larger than 0.05 .mu.m is incorporated in an amount of at least 0.1% by weight into the nitrogen-containing silane compound and/or amorphous silicon nitride, the mixture is formed into a power or molded body having a powder bulk density of at least 0.1 g/cm.sup.3 as silicon, and the powder or molded body is heated to 1,350.degree. to 1,700.degree. C. while controlling the temperature-elevating rate to at least 15.degree. C./min throughout the temperature range of from 1,200.degree. to 1,350.degree. C. The resulting high .alpha.-type silicon nitride is composed of a fine granular crystal and the does not contain a needle crystal or columnar crystal.

    摘要翻译： 公开了一种制备高α型氮化硅粉末的方法，其中含氮硅烷化合物和/或非晶氮化硅结晶以形成结晶氮化硅。 在该方法中，将粒径不大于0.05μm的结晶氮化硅以至少0.1重量％的量掺入含氮硅烷化合物和/或非晶氮化硅中，将该混合物形成为电力 或具有至少0.1g / cm 3的粉末堆积密度的成型体作为硅，并将粉末或模塑体加热至1350℃至1,700℃，同时将升温速率控制在至少15℃/分钟 在1200-11350℃的温度范围内。所得到的高α型氮化硅由细晶粒状晶体构成，不含有针晶或柱状晶体。

    Sintered product of zirconia and method of producing the same
    5.
    发明授权
    Sintered product of zirconia and method of producing the same 失效
    氧化锆的烧结体及其制造方法

    公开(公告)号：US4690910A

    公开(公告)日：1987-09-01

    申请号：US804956

    申请日：1985-12-02

    申请人： Koji Tsukuma ,  Takaaki Tsukidate

    发明人： Koji Tsukuma ,  Takaaki Tsukidate

    IPC分类号： B43L5/00 ,  C04B35/486 ,  C04B35/48 ,  C04B35/50

    CPC分类号： C04B35/486

    摘要： A sintered product of zirconia comprising ZrO.sub.2 and CeO.sub.2 in a molar ratio of CeO.sub.2 /ZrO.sub.2 of 8/92-30/70, and consisting of a crystal phase which is a mixed phase consisting essentially of a tetragonal phase and a cubic phase, or which is a phase consisting essentially of a tetragonal phase, has a high mechanical strength and a high rupture toughness, and is applicable as the constituting materials of tools for machining and cutting, various kinds of dies and nozzles, parts for sliding and other industrial materials.

    摘要翻译： 或者由CeO 2 / ZrO 2的摩尔比为8/92〜30/70的ZrO 2和CeO 2的氧化锆烧结体构成，该结晶相是由四方相和立方相组成的混合相，或 是基本上由四方相组成的相，具有高的机械强度和高的断裂韧性，并且可用作用于加工和切割的工具的构成材料，各种模具和喷嘴，用于滑动的部件和其它工业材料。

    Method of manufacturing high-purity silicon nitride powder
    7.
    发明授权
    Method of manufacturing high-purity silicon nitride powder 失效
    制造高纯度氮化硅粉末的方法

    公开(公告)号：US4387079A

    公开(公告)日：1983-06-07

    申请号：US299939

    申请日：1981-09-08

    申请人： Kiyoshi Kasai ,  Kohji Tsukuma ,  Takaaki Tsukidate

    发明人： Kiyoshi Kasai ,  Kohji Tsukuma ,  Takaaki Tsukidate

    IPC分类号： C01B21/068 ,  C01B21/087

    CPC分类号： C01B21/068 ,  C01B21/087 ,  C01P2002/72 ,  C01P2004/03

    摘要： A method of manufacturing highly purified silicon nitride including the steps of preparing a nitrogen-containing silane selected from the group consisting of tetra-amide-monosilane and silicon imide, and heat-treating the prepared nitrogen-containing silane in the presence of ammonia in an inner atmosphere at a temperature above 400.degree. C. for a period of at least two hours to obtain silicon nitride, and cooling and collecting the silicon nitride thus formed. The step of preparing the nitrogen-containing silane comprises continuously reacting gaseous silicon tetra-chloride with gaseous ammonia in an inner atmosphere at a temperature of from -30.degree. to 70.degree. C. to produce the nitrogen-containing silane as a product and collecting the product. The resultant silicon nitride so produced has a chlorine content of less than 0.05 weight percent and a nitrogen content of over 38 weight percent.

    摘要翻译： 一种制造高纯度氮化硅的方法，包括以下步骤：制备选自四酰胺 - 甲硅烷和硅酰亚胺的含氮硅烷，并在氨的存在下，将制备的含氮硅烷在 在400℃以上的内部气氛中保持至少2小时的时间以获得氮化硅，并冷却并收集由此形成的氮化硅。 制备含氮硅烷的步骤包括在-30℃至70℃的温度下，将气态四氯化硅与气态氨在气氛中连续反应，以产生含氮硅烷作为产物，并收集 产品。 如此生成的所得氮化硅的氯含量小于0.05重量％，氮含量超过38重量％。

    Actuator
    8.
    发明授权
    Actuator 失效
    执行器

    公开(公告)号：US4862029A

    公开(公告)日：1989-08-29

    申请号：US145861

    申请日：1988-01-20

    申请人： Kiyoshi Kasai ,  Naomichi Sakai ,  Tomoyuki Oikawa ,  Kenji Uchino ,  Takaaki Tsukidate ,  Hiroshi Asakura ,  Hiroshi Yamamura ,  Hiroya Nagata

    发明人： Kiyoshi Kasai ,  Naomichi Sakai ,  Tomoyuki Oikawa ,  Kenji Uchino ,  Takaaki Tsukidate ,  Hiroshi Asakura ,  Hiroshi Yamamura ,  Hiroya Nagata

    IPC分类号： C04B35/465 ,  C04B35/486 ,  C04B35/491 ,  H01L41/187

    CPC分类号： C04B35/465 ,  C04B35/486 ,  C04B35/491 ,  H01L41/094 ,  H01L41/1876

    摘要： An actuator of the present invention is composed of a monomorph-type piezoelectric ceramic. The monomorph-type piezoelectric ceramic is a BaTiO.sub.3 -based ceramic, a PZT based ceramic having Nb, Sb, La, Mn, Nd and Bi, BaTiO.sub.3 --SrTiO.sub.3 -based ceramic containing SrTiO.sub.3 by 20 to 35 mole %, K(Nb, Ta)O.sub.3 -based ceramic, or a ceramic represented by a general formula: [Pb, (A.sub.1/2 B.sub.1/2)](Zr.sub.1-n, Cn)O.sub.3 where A is a monovalent element such as Li, Na, K, Rb, Cs or the like, B is a trivalent element such as Bi, La, Y, Sb, Ga or the like, A and B being both replaceable solid-meltable elements for Pb, C is an element such as Ti, Sn or the like that is a replaceable solid-meltable element for Zr, and n is from 0 to 0.8.

    摘要翻译： 本发明的致动器由单晶型压电陶瓷构成。 单晶型压电陶瓷是一种BaTiO3系陶瓷，具有Nb，Sb，La，Mn，Nd和Bi，BaTiO3-SrTiO3系陶瓷的PZT系陶瓷，含有20〜35摩尔％的SrTiO 3，K（Nb，Ta ）或由通式[Pb，（A1 / 2B1 / 2）]（Zr1-n，Cn）O3表示的陶瓷，其中A是Li，Na，K，Rb等的一价元素， Cs等，B是Bi，La，Y，Sb，Ga等的三价元素，A和B都是Pb的可固态可固化元素，C是Ti，Sn等元素 其是用于Zr的可替换的固体可熔性元素，n为0至0.8。

    High-strength zirconia type sintered body
    9.
    发明授权
    High-strength zirconia type sintered body 失效
    高强度氧化锆型烧结体

    公开(公告)号：US4587225A

    公开(公告)日：1986-05-06

    申请号：US661968

    申请日：1984-10-17

    申请人： Koji Tsukuma ,  Kuniyoshi Ueda ,  Takaaki Tsukidate

    发明人： Koji Tsukuma ,  Kuniyoshi Ueda ,  Takaaki Tsukidate

    IPC分类号： C04B35/488 ,  C04B35/645 ,  C04B35/48

    CPC分类号： C04B35/6455 ,  C04B35/488 ,  C04B35/4885

    摘要： A zirconia type sintered body consisting essentially of 50 to 98% by weight of zirconia (ZrO.sub.2) containing 1.5 to 5 mole % of yttria (Y.sub.2 O.sub.3) and 50 to 2% by weight of alumina (Al.sub.2 O.sub.3), spinal (MgAl.sub.2 O.sub.4) or mullite (3Al.sub.2 O.sub.3.2SiO.sub.2), and having a three-point bending strength of at least 1700 MPa is provided. This sintered body is prepared by a process wherein a powdery composition consisting essentially of 50 to 98% by weight of (a1) a powder of zirconia containing 1.5 to 5 mole % of yttria or (a2) a mixture comprising 1.5 to 5 mole % of a yttria powder and 95 to 98.5 mole % of a zirconia powder and 2 to 50% by weight of (b) a powder of an alumina type oxide selected from alumina, an alumina-magnesia type oxide, an alumina-silica type oxide, a mixture of alumina and magnesia and a mixture of alumina and silica is subjected to a hot isotactic pressing treatment under a pressure of at lesast 50 MPa at temperature of 1300.degree. C. to 1700.degree. C. or a monoazially compression-sintering treatment under a pressure of at least 20 MPa at a temperature of 1400.degree. C. to 1700.degree. C.

    摘要翻译： 氧化锆型烧结体，主要由50〜98重量％的含有1.5〜5摩尔％的氧化钇（Y 2 O 3）和50〜2重量％的氧化铝（Al 2 O 3），氧化锆（MgAl 2 O 4）或莫来石 3Al2O3.2SiO2），并具有至少1700MPa的三点弯曲强度。 该烧结体通过以下方法制备：粉末组合物，其主要由50〜98重量％（a1）含有1.5〜5摩尔％氧化钇的氧化锆粉末或（a2）含有1.5〜5摩尔％ 氧化钇粉末和95〜98.5摩尔％的氧化锆粉末和2〜50重量％的（b）氧化铝型氧化物粉末，选自氧化铝，氧化铝 - 氧化镁型氧化物，氧化铝 - 二氧化硅型氧化物， 氧化铝和氧化镁的混合物以及氧化铝和二氧化硅的混合物在1300℃至1700℃的温度下在50MPa的压力下进行热全同立构压制处理，或在压力下进行单相压缩烧结处理 在1400℃至1700℃的温度下为至少20MPa。

    Process for preparing high-purity .alpha.-type silicon nitride
    10.
    发明授权
    Process for preparing high-purity .alpha.-type silicon nitride 失效
    制备高纯度α型氮化硅的方法

    公开(公告)号：US4346068A

    公开(公告)日：1982-08-24

    申请号：US222671

    申请日：1981-01-05

    申请人： Kiyoshi Kasai ,  Yoshitaka Kubota ,  Takaaki Tsukidate

    发明人： Kiyoshi Kasai ,  Yoshitaka Kubota ,  Takaaki Tsukidate

    IPC分类号： C01B21/068

    CPC分类号： C01B21/068 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/61

    摘要： High-purity .alpha.-type silicon nitride comprised of a granular crystal having an .alpha.-phase content of at least 95%, a nitrogen content of at least 38% by weight and an average particle size of not larger than 3 .mu.m is provided. This high-purity .alpha.-type silicon nitride is prepared by heating a nitrogen-containing silane compound at a temperature of at least about 1,300.degree. C. in a heating furnace comprised of a material containing a metal having a melting point exceeding 1,600.degree. C. and capable of being bonded with oxygen at the heating temperature.

    摘要翻译： 提供了由具有至少95％的α-相含量，至少38重量％的氮含量和不大于3μm的平均粒径的粒状晶体构成的高纯度α型氮化硅。 这种高纯度α型氮化硅通过在包含熔点超过1600℃的金属的加热炉中在至少约1300℃的温度下加热含氮硅烷化合物来制备。 并且能够在加热温度下与氧结合。