公开(公告)号：US09275895B2

公开(公告)日：2016-03-01

申请号：US14166090

申请日：2014-01-28

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Walter Hartner ,  Hermann Gruber ,  Dietrich Bonart ,  Thomas Gross

IPC: H01L21/763 ,  H01L21/768 ,  H01L21/762 ,  H01L27/105 ,  H01L21/84 ,  H01L27/12

CPC classification number: H01L21/76802 ,  H01L21/76286 ,  H01L21/76877 ,  H01L21/84 ,  H01L27/1203

Abstract: A method for producing a semiconductor component with a semiconductor body includes providing a substrate of a first conductivity type. A buried semiconductor layer of a second conductivity type is provided on the substrate. A functional unit semiconductor layer is provided on the buried semiconductor layer. At least one trench, which reaches into the substrate, is formed in the semiconductor body. An insulating layer is formed, which covers inner walls of the trench and electrically insulates the trench interior from the functional unit semiconductor layer and the buried semiconductor layer, the insulating layer having at least one opening in the region of the trench bottom. The at least one trench is filled with an electrically conductive semiconductor material of the first conductivity type, wherein the electrically conductive semiconductor material forms an electrical contact from a surface of the semiconductor body to the substrate.

Abstract translation: 一种制造具有半导体本体的半导体部件的方法，包括提供第一导电型的基板。 在基板上设置第二导电类型的掩埋半导体层。 功能单元半导体层设置在掩埋半导体层上。 至少一个到达衬底的沟槽形成在半导体本体中。 形成绝缘层，其覆盖沟槽的内壁，并使沟槽内部与功能单元半导体层和埋入半导体层电绝缘，绝缘层在沟槽底部的区域中具有至少一个开口。 所述至少一个沟槽填充有第一导电类型的导电半导体材料，其中所述导电半导体材料形成从所述半导体主体的表面到所述衬底的电接触。