公开(公告)号：US20070119963A1

公开(公告)日：2007-05-31

申请号：US11595387

申请日：2006-11-09

申请人： Anna DiBello ,  Mark Armstrong ,  Henri Spaile ,  David Petrarcic ,  Ed Kopinski

发明人： Anna DiBello ,  Mark Armstrong ,  Henri Spaile ,  David Petrarcic ,  Ed Kopinski

IPC分类号： A24F25/00 ,  A61L9/04

CPC分类号： B60H3/0028 ,  A61L9/037 ,  B60H3/0007

摘要： A clip on type air freshener device having a housing with openings in walls thereof permitting air flow through a cavity in the housing. A bottle that holds a supply of fragrance bearing liquid is mounted on the housing and has a wick with a portion thereof projecting into the cavity in the housing. An open ended sleeve is mounted on housing in axial alignment with such projecting wick portion and is adjustably moveable axially along the wick selectively in one position to completely cover the wick projecting portion and in another position leave at least a major portion thereof exposed to air flow through said housing openings. The wick cover is exposed through an opening in the housing giving the user a visual indication as to the amount of wick exposed for evaporation of the fragrance during usage of the device.

摘要翻译： 一种夹式空气清新器装置，其具有在其壁中具有开口的壳体，其允许空气流过壳体中的空腔。 保持供应有香料的液体的瓶被安装在壳体上，并且具有芯部，其芯部突出到壳体中的空腔中。 开口套筒安装在与这种突出的芯部分轴向对准的壳体上，并且可沿着灯芯可选地在一个位置轴向地可移动地运动，以完全覆盖芯突出部分，并且在另一位置使其至少大部分暴露于空气流 通过所述壳体开口。 灯芯盖通过外壳中的开口露出，使用户可以看到在使用设备期间为了蒸发香味而吸收的灯芯数量的可视指示。

公开(公告)号：USD537981S1

公开(公告)日：2007-03-06

申请号：US29244901

申请日：2005-12-15

申请人： Mark Armstrong

设计人： Mark Armstrong

公开(公告)号：US07187057B2

公开(公告)日：2007-03-06

申请号：US10918802

申请日：2004-08-13

申请人： Cory E. Weber ,  Mark Armstrong ,  Harold Kennel ,  Tahir Ghani ,  Paul A. Packan ,  Scott Thompson

发明人： Cory E. Weber ,  Mark Armstrong ,  Harold Kennel ,  Tahir Ghani ,  Paul A. Packan ,  Scott Thompson

IPC分类号： H01L31/0312

CPC分类号： H01L29/7842 ,  H01L21/26506 ,  H01L21/823807 ,  H01L29/7833

摘要： Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.

公开(公告)号：USD536255S1

公开(公告)日：2007-02-06

申请号：US29210791

申请日：2004-08-04

申请人： John Corbett ,  Denise Lefebvre ,  Grant Thomas Briggs ,  Lori Evans Bartman ,  Edouard Didier John Irvine Ball ,  Ian Webb ,  Mark Armstrong ,  Edward Adamson

设计人： John Corbett ,  Denise Lefebvre ,  Grant Thomas Briggs ,  Lori Evans Bartman ,  Edouard Didier John Irvine Ball ,  Ian Webb ,  Mark Armstrong ,  Edward Adamson

公开(公告)号：USD533785S1

公开(公告)日：2006-12-19

申请号：US29210789

申请日：2004-08-04

申请人： John Corbett ,  Denise Lefebvre ,  Grant Thomas Briggs ,  Lori Evans Bartman ,  Edouard Didier John Irvine Ball ,  Ian Webb ,  Mark Armstrong ,  Edward Adamson

设计人： John Corbett ,  Denise Lefebvre ,  Grant Thomas Briggs ,  Lori Evans Bartman ,  Edouard Didier John Irvine Ball ,  Ian Webb ,  Mark Armstrong ,  Edward Adamson

公开(公告)号：US20060154536A1

公开(公告)日：2006-07-13

申请号：US10563400

申请日：2004-07-20

申请人： Hans-Gunther Rosenkranz ,  Dmitri Shmatkov ,  Mark Armstrong

发明人： Hans-Gunther Rosenkranz ,  Dmitri Shmatkov ,  Mark Armstrong

IPC分类号： B63H23/34

CPC分类号： B63H3/04 ,  B63H20/14 ,  B63H2003/004

摘要： A marine propulsion system comprising a push rod (50) for adjusting the pitch of propeller blades (34). The push rod (50) has a screw-threaded bolt (60) engaged with a nut (78). The nut (78) carries a bevel gear (84) by which the nut (78) can be rotated to cause the bolt (60) and therefore the push rod (50) to move longitudinally. The push rod (50) is connected to a claw with arms couple with pins (170). The pins (170) engage eccentric shafts (174) for unlocking a propeller base (190) so the base (190) can rotate around a transverse axis. The base (190) has an inclined surface which engages with an inclined surface defining an opening in the propeller's hub therefore locking the propeller blade (34) in position. The inclined surfaces are disengaged by rotation of the eccentric shaft (174) thus the propeller blades (34) can be rotated to adjust the pitch and than the inclined surfaces re-engage locking the propeller blade (34) in the pitch adjusted position.

摘要翻译： 一种船用推进系统，包括用于调节螺旋桨叶片（34）的桨距的推杆（50）。 推杆（50）具有与螺母（78）接合的螺纹螺栓（60）。 螺母（78）承载有锥齿轮（84），螺母（78）可以通过该锥齿轮（84）旋转，从而使螺栓（60）因此推杆（50）纵向移动。 推杆（50）连接到具有与销（170）连接的臂的爪。 销（170）接合用于解锁螺旋桨基座（190）的偏心轴（174），使得基座（190）能够围绕横向轴线旋转。 基部（190）具有倾斜表面，其与限定螺旋桨毂中的开口的倾斜表面接合，因此将螺旋桨叶片（34）锁定在适当位置。 倾斜表面通过偏心轴（174）的旋转而脱离，因此螺旋桨叶片34可以旋转以调节间距，而倾斜表面使螺旋桨叶片34在螺距调节位置上重新接合。

公开(公告)号：US07045408B2

公开(公告)日：2006-05-16

申请号：US10443152

申请日：2003-05-21

申请人： Thomas Hoffmann ,  Chris Auth ,  Mark Armstrong ,  Stephen Cea

发明人： Thomas Hoffmann ,  Chris Auth ,  Mark Armstrong ,  Stephen Cea

IPC分类号： H01L21/8238 ,  H01L21/84 ,  H01L21/00 ,  H01L21/461 ,  H01L21/31

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823828 ,  H01L29/665

摘要： An integrated circuit is described that comprises a PMOS transistor and an NMOS transistor that are formed on a semiconductor substrate. A silicate glass layer is formed on only the PMOS transistor or the NMOS transistor; and an etch stop layer is formed on the silicate glass layer. Also described is a method for forming an integrated circuit. That method comprises forming a PMOS transistor structure and an NMOS transistor structure on a semiconductor substrate, forming a silicate glass layer on only the PMOS transistor structure or the NMOS transistor structure, and forming an etch stop layer on the silicate glass layer.

摘要翻译： 描述了一种集成电路，其包括形成在半导体衬底上的PMOS晶体管和NMOS晶体管。 仅在PMOS晶体管或NMOS晶体管上形成硅酸盐玻璃层; 并且在硅酸盐玻璃层上形成蚀刻停止层。 还描述了一种用于形成集成电路的方法。 该方法包括在半导体衬底上形成PMOS晶体管结构和NMOS晶体管结构，仅在PMOS晶体管结构或NMOS晶体管结构上形成硅酸盐玻璃层，并在硅酸盐玻璃层上形成蚀刻停止层。

公开(公告)号：US06800887B1

公开(公告)日：2004-10-05

申请号：US10405110

申请日：2003-03-31

申请人： Cory E. Weber ,  Mark Armstrong ,  Harold Kennel ,  Tahir Ghani ,  Paul A. Packan ,  Scott Thompson

发明人： Cory E. Weber ,  Mark Armstrong ,  Harold Kennel ,  Tahir Ghani ,  Paul A. Packan ,  Scott Thompson

IPC分类号： H01L2980

CPC分类号： H01L29/7842 ,  H01L21/26506 ,  H01L21/823807 ,  H01L29/7833

摘要： Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.

摘要翻译： 改进金属氧化物半导体场效应晶体管（MOSFET）性能的已知技术是向MOSFET增加高应力电介质层。 高应力电介质层在MOSFET中引入应力，导致电子迁移率驱动电流增加。 然而，这种技术提高了工艺复杂度，并且可能降低PMOS性能。 本发明的实施例在MOSFET衬底中产生位错环以在衬底中引入应力和注入氮以控制位错环的生长，使得应力保持在MOSFET的沟道下方。

公开(公告)号：US09911128B2

公开(公告)日：2018-03-06

申请号：US12740079

申请日：2008-10-31

申请人： Ben Chestnut ,  Mark Armstrong ,  Chadwick Morris

发明人： Ben Chestnut ,  Mark Armstrong ,  Chadwick Morris

IPC分类号： G06F15/16 ,  G06Q30/02

CPC分类号： G06Q30/02

摘要： Systems and methods for determining and sending a preferred of two electronic mail communications or messages (‘emails’) to a group to increase likelihood of its review. Information for conducting a test between two emails, referred to as A email and B email, is collected. The information may identify a particular group, and segments A and B of the group. The information may provide content for the emails and include differentiation information between the emails. Determination information on how to select one of the emails as the preferred email and when to select the preferred email may be collected. The information is used to send the A email to the segment A, to send the B email to the segment B, to determine the preferred email between the A email and the B email, and to send the preferred email to at least a portion of the particular group.

公开(公告)号：US09484447B2

公开(公告)日：2016-11-01

申请号：US13539195

申请日：2012-06-29

申请人： Seiyon Kim ,  Kelin J. Kuhn ,  Tahir Ghani ,  Anand S. Murthy ,  Mark Armstrong ,  Rafael Rios ,  Abhijit Jayant Pethe ,  Willy Rachmady

发明人： Seiyon Kim ,  Kelin J. Kuhn ,  Tahir Ghani ,  Anand S. Murthy ,  Mark Armstrong ,  Rafael Rios ,  Abhijit Jayant Pethe ,  Willy Rachmady

IPC分类号： H01L29/78 ,  H01L21/336 ,  B82Y40/00 ,  B82Y99/00 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L29/0673 ,  B82Y40/00 ,  H01L21/30604 ,  H01L21/3105 ,  H01L21/31155 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/78 ,  H01L29/78696

摘要： A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

摘要翻译： 公开了一种具有多个内部间隔物的纳米线器件和用于形成所述内部间隔物的方法。 在一个实施例中，半导体器件包括设置在衬底上方的纳米线堆叠，纳米线堆叠具有多个垂直堆叠的纳米线，围绕多个纳米线中的每一个缠绕的栅极结构，限定器件的沟道区，栅极 结构，其具有栅极侧壁，在沟道区域的相对侧上的一对源极/漏极区域; 以及位于纳米线堆叠内部的两个相邻纳米线之间的栅极侧壁的一部分上的内部间隔物。 在一个实施例中，内部间隔物通过在与沟道区相邻蚀刻的凹坑中沉积间隔物形成。 在一个实施例中，通过沟道区蚀刻凹坑。 在另一个实施例中，通过源/漏区蚀刻凹坑。