公开(公告)号：US06229190B1

公开(公告)日：2001-05-08

申请号：US09216073

申请日：1998-12-18

申请人： Janusz Bryzek ,  David W. Burns ,  Steven S. Nasiri ,  Sean S. Cahill

发明人： Janusz Bryzek ,  David W. Burns ,  Steven S. Nasiri ,  Sean S. Cahill

IPC分类号： H01L2982

CPC分类号： G01L19/147 ,  G01L9/0042 ,  G01L9/0054 ,  G01L19/0038 ,  G01L19/143 ,  G01P2015/084 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/16151 ,  H01L2924/16195 ,  H01L2924/00014

摘要： A semiconductor pressure sensor compatible with fluid and gaseous media applications is described. The semiconductor pressure sensor includes a sensor capsule having a semiconductor die and a silicon cap that is bonded to the semiconductor die. The semiconductor die includes a diaphragm that incorporates piezoresistive sensors thereon, and a stress isolation mechanism for isolating the diaphragm from packaging and mounting stresses. The silicon cap includes a cavity for allowing the diaphragm to deflect. The semiconductor pressure sensor further includes a pressure port that is hermetically attached to the semiconductor die. The sensor capsule and pressure port may be incorporated into a plastic housing. In one embodiment, the silicon cap is bonded to the semiconductor die to form an integral pressure reference. In an alternative embodiment, a second pressure port is provided for allowing gage or differential pressure measurements. A technique for incorporating the piezoresistive sensors is also described. An ASIC may be optionally attached to the silicon cap, and/or active electronic circuitry may be fabricated on the semiconductor die or silicon cap. Additional coatings may be optionally applied to the pressure port and semiconductor die for enhancing chemical resistance.

摘要翻译： 描述了与流体和气体介质应用相兼容的半导体压力传感器。 半导体压力传感器包括具有半导体管芯和粘合到半导体管芯上的硅帽的传感器封装。 半导体管芯包括在其上结合有压阻传感器的隔膜以及用于将隔膜与封装和安装应力隔离的应力隔离机构。 硅帽包括用于允许隔膜偏转的空腔。 半导体压力传感器还包括气密地附接到半导体管芯的压力端口。 传感器胶囊和压力端口可以结合到塑料外壳中。 在一个实施例中，硅帽结合到半导体管芯以形成整体的压力参考。 在替代实施例中，提供了用于允许量规或差压测量的第二压力端口。 还描述了一种用于结合压阻传感器的技术。 ASIC可以可选地附接到硅帽，和/或有源电子电路可以制造在半导体管芯或硅帽上。 另外的涂层可以任选地施加到压力端口和半导体管芯上以提高耐化学性。