公开(公告)号：US20210132793A1

公开(公告)日：2021-05-06

申请号：US17083247

申请日：2020-10-28

申请人： David W. Burns ,  Debra Brubaker Burns

发明人： David W. Burns ,  Debra Brubaker Burns

IPC分类号： G06F3/0488 ,  G06F1/16

摘要： A mobile display device may include a first display panel with a display screen having a viewing surface, a second display panel with a second display screen having a viewing surface, and a multi-position hinge coupling the first display panel to the second display panel. The first display panel and the second display panel may be configurable in a closed configuration, a paperback configuration, a tablet configuration, or a back-to-back configuration.

公开(公告)号：US07605391B2

公开(公告)日：2009-10-20

申请号：US11164915

申请日：2005-12-10

申请人： David W. Burns

发明人： David W. Burns

IPC分类号： H01L27/14 ,  H01L31/00 ,  H01L29/82

CPC分类号： G01L9/002

摘要： An optically coupled resonator includes a resonator body having at least one resonator sidewall and a laterally offset photodiode formed in a semiconductor substrate adjacent to the resonator body. The resonator is driven by an electric field generated between the laterally offset photodiode and the resonator body when an incident light strikes the photodiode. A device including an optically coupled resonator and a method of operating an optically coupled resonator are also disclosed.

摘要翻译： 光耦合谐振器包括具有至少一个谐振器侧壁和形成在与谐振器本体相邻的半导体衬底中的侧向偏移光电二极管的谐振器本体。 当入射光照射到光电二极管时，谐振器由横向偏移光电二极管和谐振器本体之间产生的电场驱动。 还公开了一种包括光耦合谐振器的装置和一种操作光耦合谐振器的方法。

公开(公告)号：US07499604B1

公开(公告)日：2009-03-03

申请号：US11164914

申请日：2005-12-10

申请人： David W. Burns

发明人： David W. Burns

IPC分类号： G02B6/00

CPC分类号： G01L9/002 ,  G02B6/3552 ,  G02B6/3594

摘要： A process for fabricating an optically coupled resonant pressure sensor includes the steps of forming a sensor die including at least one optically coupled resonator from a first semiconductor substrate and forming a cap die including a fiber hole from a second semiconductor substrate. The sensor die and the cap die are aligned and bonded to form a resonant pressure sensor capsule. The fiber hole in the cap die is aligned with at least one resonator on the sensor die. Also disclosed is an optically coupled resonant pressure sensor formed from steps thereof.

摘要翻译： 一种用于制造光耦合谐振压力传感器的方法包括以下步骤：从第一半导体衬底形成包括至少一个光耦合谐振器的传感器管芯，并形成包括来自第二半导体衬底的光纤孔的帽模。 传感器芯片和盖模具对准并结合以形成共振压力传感器胶囊。 盖模具中的光纤孔与传感器裸片上的至少一个谐振器对准。 还公开了由其步骤形成的光耦合谐振压力传感器。

公开(公告)号：US07176048B1

公开(公告)日：2007-02-13

申请号：US10905036

申请日：2004-12-12

申请人： David W. Burns

发明人： David W. Burns

IPC分类号： H01L21/00

CPC分类号： G01L9/002 ,  G01L1/103 ,  G01P15/093 ,  G01P15/097

摘要： A process to form a laterally offset photodiode for an optically coupled resonator includes implanting a semiconductor substrate to form the laterally offset photodiode adjacent to the resonator. The resonator masks the implanting underneath the resonator when the semiconductor substrate is implanted. Also disclosed is an optically coupled resonator, a process for fabricating an optically coupled resonator, and a device including an optically coupled resonator having a laterally offset photodiode.

摘要翻译： 形成用于光耦合谐振器的横向偏移光电二极管的工艺包括：注入半导体衬底以形成与谐振器相邻的侧向偏移光电二极管。 当植入半导体衬底时，谐振器掩盖在谐振器下方的注入。 还公开了光耦合谐振器，用于制造光耦合谐振器的工艺，以及包括具有侧向偏移光电二极管的光耦合谐振器的器件。

公开(公告)号：US06255728B1

公开(公告)日：2001-07-03

申请号：US09232801

申请日：1999-01-15

申请人： Steven S. Nasiri ,  David W. Burns ,  Janusz Bryzek

发明人： Steven S. Nasiri ,  David W. Burns ,  Janusz Bryzek

IPC分类号： H01L2312

CPC分类号： G01L19/147 ,  G01L19/0038 ,  G01L19/0084 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A rigid encapsulation package for semiconductor sensors, actuators, and devices is described. In one embodiment, a semiconductor pressure sensor includes a sensor element having a deformable diaphragm for measurement of pressure, and a cap that includes a recess. The cap is attached to the sensor element to form a cavity therebetween. The pressure sensor further includes a leadframe, interconnecting bond wires, a pressure port that is coupled to the sensor element, and a nominally rigid material formed over the sensor element, cap, leadframe, and bond wires. The material may include one or more of the following: epoxy, RTV, resins, and gel. The sensor element may include a built-in stress isolation flexible region. A second pressure port may optionally be attached to the housing for providing differential or gage pressure measurements.

摘要翻译： 描述了用于半导体传感器，致动器和装置的刚性封装封装。 在一个实施例中，半导体压力传感器包括具有用于测量压力的可变形隔膜的传感器元件和包括凹部的盖。 盖连接到传感器元件以在它们之间形成空腔。 压力传感器还包括引线框架，互连接合线，耦合到传感器元件的压力端口，以及形成在传感器元件，盖子，引线框架和接合线上的标称刚性材料。 该材料可以包括以下一种或多种：环氧树脂，RTV，树脂和凝胶。 传感器元件可以包括内置的应力隔离柔性区域。 可以可选地将第二压力端口附接到壳体以提供差压或量规压力测量。

公开(公告)号：US06229190B1

公开(公告)日：2001-05-08

申请号：US09216073

申请日：1998-12-18

申请人： Janusz Bryzek ,  David W. Burns ,  Steven S. Nasiri ,  Sean S. Cahill

发明人： Janusz Bryzek ,  David W. Burns ,  Steven S. Nasiri ,  Sean S. Cahill

IPC分类号： H01L2982

CPC分类号： G01L19/147 ,  G01L9/0042 ,  G01L9/0054 ,  G01L19/0038 ,  G01L19/143 ,  G01P2015/084 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/16151 ,  H01L2924/16195 ,  H01L2924/00014

摘要： A semiconductor pressure sensor compatible with fluid and gaseous media applications is described. The semiconductor pressure sensor includes a sensor capsule having a semiconductor die and a silicon cap that is bonded to the semiconductor die. The semiconductor die includes a diaphragm that incorporates piezoresistive sensors thereon, and a stress isolation mechanism for isolating the diaphragm from packaging and mounting stresses. The silicon cap includes a cavity for allowing the diaphragm to deflect. The semiconductor pressure sensor further includes a pressure port that is hermetically attached to the semiconductor die. The sensor capsule and pressure port may be incorporated into a plastic housing. In one embodiment, the silicon cap is bonded to the semiconductor die to form an integral pressure reference. In an alternative embodiment, a second pressure port is provided for allowing gage or differential pressure measurements. A technique for incorporating the piezoresistive sensors is also described. An ASIC may be optionally attached to the silicon cap, and/or active electronic circuitry may be fabricated on the semiconductor die or silicon cap. Additional coatings may be optionally applied to the pressure port and semiconductor die for enhancing chemical resistance.

摘要翻译： 描述了与流体和气体介质应用相兼容的半导体压力传感器。 半导体压力传感器包括具有半导体管芯和粘合到半导体管芯上的硅帽的传感器封装。 半导体管芯包括在其上结合有压阻传感器的隔膜以及用于将隔膜与封装和安装应力隔离的应力隔离机构。 硅帽包括用于允许隔膜偏转的空腔。 半导体压力传感器还包括气密地附接到半导体管芯的压力端口。 传感器胶囊和压力端口可以结合到塑料外壳中。 在一个实施例中，硅帽结合到半导体管芯以形成整体的压力参考。 在替代实施例中，提供了用于允许量规或差压测量的第二压力端口。 还描述了一种用于结合压阻传感器的技术。 ASIC可以可选地附接到硅帽，和/或有源电子电路可以制造在半导体管芯或硅帽上。 另外的涂层可以任选地施加到压力端口和半导体管芯上以提高耐化学性。

公开(公告)号：US5808210A

公开(公告)日：1998-09-15

申请号：US777651

申请日：1996-12-31

申请人： William R. Herb ,  David W. Burns

发明人： William R. Herb ,  David W. Burns

IPC分类号： G01L9/00 ,  G01C11/00

CPC分类号： G01L9/002

摘要： A micromechnical sensor having a polysilicon beam that is an integral part of the diaphragm resulting in a frequency of the beam that is a direct result of the pressure applied to the external surface of the diaphragm. Fabrication of this resonant microbeam sensor has no backside wafer processing, and involves a process and layout independent of wafer thickness for high yield and robustness. Both the diaphragm and resonant beam are formed from polysilicon. The sensor may have more than one resonant beam. The sensor beam or beams may be driven and sensed by electrical or optical mechanisms. For stress isolation, the sensor may be situated on a cantilevered single crystal silicon paddle. The sensor may be recessed on the isolating die for non-interfering interfacing with optical or electrical devices. The sensor die may be circular for ease in mounting with fiber optic components.

摘要翻译： 一种微技术传感器，其具有作为隔膜的整体部分的多晶硅束，其导致直接由施加到隔膜的外表面的压力导致的光束的频率。 这种谐振微束传感器的制造没有背面晶片处理，并且涉及与晶片厚度无关的工艺和布局，用于高产率和鲁棒性。 膜片和谐振光束均由多晶硅形成。 传感器可以具有多于一个谐振波束。 传感器光束或光束可以由电或光学机构驱动和感测。 对于应力隔离，传感器可以位于悬臂单晶硅片上。 传感器可以凹入隔离管芯，用于与光学或电气设备的非干扰接口。 传感器芯片可以是圆形的，以便于光纤部件的安装。

公开(公告)号：US5747705A

公开(公告)日：1998-05-05

申请号：US778375

申请日：1996-12-31

申请人： William R. Herb ,  David W. Burns

发明人： William R. Herb ,  David W. Burns

IPC分类号： G01L9/00 ,  H01L29/84 ,  G01L1/10

CPC分类号： G01L9/0019

摘要： A micromechnical sensor having a polysilicon beam that is an integral part of the diaphragm resulting in a frequency of the beam that is a direct result of the pressure applied to the external surface of the diaphragm. Fabrication of this resonant microbeam sensor has no backside wafer processing, and involves a process and layout independent of wafer thickness for high yield and robustness. Both the diaphragm and resonant beam are formed from polysilicon. The sensor may have more than one resonant beam. The sensor beam or beams may be driven and sensed by electrical or optical mechanisms. For stress isolation, the sensor may be situated on a cantilevered single crystal silicon paddle. The sensor may be recessed on the isolating die for non-interfering interfacing with optical or electrical devices.

摘要翻译： 一种微技术传感器，其具有作为隔膜的整体部分的多晶硅束，其导致直接由施加到隔膜的外表面的压力导致的光束的频率。 这种谐振微束传感器的制造没有背面晶片处理，并且涉及与晶片厚度无关的工艺和布局，用于高产率和鲁棒性。 膜片和谐振光束均由多晶硅形成。 传感器可以具有多于一个谐振波束。 传感器光束或光束可以由电或光学机构驱动和感测。 对于应力隔离，传感器可以位于悬臂单晶硅片上。 传感器可以凹入隔离管芯，用于与光学或电气设备的非干扰接口。

公开(公告)号：US5559358A

公开(公告)日：1996-09-24

申请号：US247911

申请日：1994-05-23

申请人： David W. Burns ,  Henry Guckel ,  James D. Zook

发明人： David W. Burns ,  Henry Guckel ,  James D. Zook

IPC分类号： G01D21/00 ,  G01J1/02 ,  G01J5/44 ,  G01K7/32 ,  G01K11/26 ,  G01L9/00 ,  G01P15/093 ,  G01P15/097 ,  G01P15/10 ,  G02B26/00 ,  G02B26/08 ,  H01L31/00 ,  H01L31/10 ,  H01L29/82

CPC分类号： H01L31/00 ,  G01J5/44 ,  G01L9/002 ,  G01P15/093 ,  G01P15/097 ,  G02B26/001 ,  G02B26/0833 ,  G01P2015/0828

摘要： The present invention relates to microstructures fabricated from semiconductor material and having a flexible member which is excited into various modes of resonance and in which such resonance is read optically. By coupling the microstructure to a surface or material of interest, a drive means will excite the flexible member into a characteristic resonance which when read optically gives indication of certain physical phenomena influencing the surface or material of interest. The microstructures of the present invention may be configured to self-resonate, as a so-called active device, under certain conditions. Many different physical phenomena may be quantified using the device of the present invention.

摘要翻译： 本发明涉及由半导体材料制成的微结构，并且具有被激发成各种谐振模式并且其中这种共振被光学读出的柔性元件。 通过将微结构耦合到感兴趣的表面或材料，驱动装置将使柔性构件激发成特征共振，其在光学读出时指示影响感兴趣的表面或材料的某些物理现象。 本发明的微结构可以被配置为在某些条件下作为所谓的有源器件自谐振。 可以使用本发明的装置量化许多不同的物理现象。

公开(公告)号：US5295395A

公开(公告)日：1994-03-22

申请号：US652148

申请日：1991-02-07

申请人： G. Benjamin Hocker ,  David W. Burns ,  Akintunde I. Akinwande ,  Robert D. Horning ,  Amir R. Mirza ,  Thomas G. Stratton ,  Deidrich J. Saathoff ,  James K. Carney ,  Scott A. McPherson

发明人： G. Benjamin Hocker ,  David W. Burns ,  Akintunde I. Akinwande ,  Robert D. Horning ,  Amir R. Mirza ,  Thomas G. Stratton ,  Deidrich J. Saathoff ,  James K. Carney ,  Scott A. McPherson

IPC分类号： G01L9/04 ,  B81C1/00 ,  G01L9/00 ,  G01L9/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L29/84 ,  G01L13/02

CPC分类号： B81C1/00182 ,  G01L9/0042 ,  G01L9/0073 ,  H01L21/2007 ,  B81B2201/0292 ,  B81B2203/0127

摘要： The formation of diaphragms by silicon wafer bonding provides for a structure having at least two such diaphragms with cavities in the wafers to which the diaphragm layer is bonded. Passageways through the wafers provide for communication of a fluid to the diaphragms. In some locations less than all of a plurality of diaphragms may be bonded to only one wafter having a cavity adjacent the diaphragm.

摘要翻译： 通过硅晶片接合形成隔膜提供了具有至少两个这样的隔膜的结构，其中隔膜层与晶片层结合在晶片上。 通过晶片的通道提供流体到膜片的连通。 在一些位置中，少于所有多个隔膜的位置可以仅结合到具有与隔膜相邻的空腔的一个凹部。