公开(公告)号：US5965301A

公开(公告)日：1999-10-12

申请号：US976453

申请日：1997-11-25

申请人： Masami Nara ,  Toshifumi Yokoyama ,  Tsukasa Abe

发明人： Masami Nara ,  Toshifumi Yokoyama ,  Tsukasa Abe

IPC分类号： G03F1/00 ,  G03F1/30 ,  G03F1/32 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  G03F9/00

CPC分类号： G03F1/74

摘要： A method for repairing a photomask by removing a residual defect in the photomask is provided which can solve problems, involved in repair of the photomask by the conventional laser beam irradiation, such as various types of maladjustments, limitation of focusing of a laser beam, creation of roughening in the repaired area, and problems, involved in repair of the photomask by focused ion beam irradiation, such as damage to a transparent substrate and a gallium stain. The method comprises the steps of: (a) applying actinic radiation to the residual defect area to remove the residual defect except for a defect edge region having a predetermined width from the periphery of the residual defect area over the whole periphery of the residual defect area; and (b) removing the defect edge region, remaining unremoved by the physical means, having a predetermined width from the periphery of the residual defect area over the whole periphery of the residual defect area by chemical etching with a chemical, the predetermined width being such that the influence of the actinic radiation does not extend over the outside of the residual defect area and, at the same time, the etching time can be set so that the region having a predetermined width from the periphery is removed by the chemical etching without any substantial influence on other layers including a light-shielding layer.

摘要翻译： 提供了通过去除光掩模中的残余缺陷来修复光掩模的方法，其可以解决通过常规激光束照射来修复光掩模的问题，诸如各种不正确的调整，激光束的聚焦限制，创建 在修复区域中的粗糙化，以及涉及通过聚焦离子束照射修复光掩模的问题，例如对透明基板的损坏和镓污染。 该方法包括以下步骤：（a）将光化辐射施加到残余缺陷区域，以除去残留缺陷区域的整个周边之外的残留缺陷区域周围具有预定宽度的缺陷边缘区域的残余缺陷 ; 和（b）通过化学蚀刻从残余缺陷区域的整个周边除去具有预定宽度的残留缺陷区域的预定宽度的物理装置保留的缺陷边缘区域，预定宽度为 光化辐射的影响不会延伸到残余缺陷区域的外部，并且同时可以设定蚀刻时间，使得通过化学蚀刻除去具有来自周边的预定宽度的区域，而没有任何 对包括遮光层的其它层的显着影响。

公开(公告)号：US06979408B2

公开(公告)日：2005-12-27

申请号：US10334662

申请日：2002-12-30

申请人： Yoshihiro Tezuka ,  Toshifumi Yokoyama ,  Tsukasa Abe

发明人： Yoshihiro Tezuka ,  Toshifumi Yokoyama ,  Tsukasa Abe

IPC分类号： C23F1/00 ,  G03F1/00 ,  G03F1/36 ,  H01L21/00

CPC分类号： G03F1/36 ,  G03F1/80

摘要： The invention provides methods and apparatuses for controlling critical dimension (CD) uniformity of a photomask by neutralizing CD variation associated with pattern density and process fluctuation.

摘要翻译： 本发明提供了通过中和与图案密度和工艺波动相关联的CD变化来控制光掩模的临界尺寸（CD）均匀性的方法和装置。

公开(公告)号：US5723234A

公开(公告)日：1998-03-03

申请号：US608065

申请日：1996-02-28

申请人： Toshifumi Yokoyama ,  Hiroyuki Miyashita

发明人： Toshifumi Yokoyama ,  Hiroyuki Miyashita

IPC分类号： G03F1/32 ,  G03F1/68 ,  G03F1/80 ,  G03F7/36 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03F9/00

CPC分类号： G03F1/30 ,  G03F1/26 ,  G03F1/36 ,  G03F1/80 ,  G03F1/32

摘要： A phase shift photomask capable of being produced by dry etching with adequate in-plane uniformity of pattern dimension even if there is a large difference in exposed area ratio between different areas on the mask. In a phase shift photomask having an area provided with a phase shift layer which practically shifts the phase relative to another area, a dummy etching pattern (13) for dry etch rate correction is provided in an area other than a pattern exposure area (9 and 10), or a dummy etching pattern for dry etch rate correction having a size less than the limit of resolution attained by transfer is provided in the pattern exposure area, thereby reducing the etch rate nonuniformity due to the pattern density variation in the process of dry etching the phase shift photomask, and thus providing a phase shift photomask of high accuracy.

摘要翻译： 即使在掩模上的不同区域之间的曝光面积比存在很大差异的情况下，能够通过干蚀刻产生具有足够的图案尺寸的面内均匀性的相移光掩模。 在具有实质上相对于另一区域偏移的相移层的区域的相移光掩模中，在除了图案曝光区域（9和9）之外的区域中提供用于干蚀刻速率校正的伪蚀刻图案（13） 或者在图案曝光区域中提供具有小于通过转印获得的分辨率的分辨率的干蚀刻速率校正的虚拟蚀刻图案，从而降低由于干燥过程中图案密度变化引起的蚀刻速率不均匀性 蚀刻相移光掩模，从而提供高精度的相移光掩模。

公开(公告)号：US07922336B2

公开(公告)日：2011-04-12

申请号：US11885208

申请日：2006-02-28

申请人： Toshifumi Yokoyama ,  Ken'ichi Kasazumi

发明人： Toshifumi Yokoyama ,  Ken'ichi Kasazumi

IPC分类号： G03B21/22

CPC分类号： G03B21/10 ,  G03B21/2033 ,  G03B21/208 ,  G03B21/28 ,  H04N5/7408 ,  H04N9/3141 ,  H04N9/3191

摘要： A light source device for a display device for projecting an image on a screen is provided, the light source device for display device including a light source unit operable to output light; an image outputting unit operable to output an image by giving an image signal to the light; and a control circuit operable to switch the image output from the image outputting unit between a normal image and a mirror reversed image formed by reversing the normal image right and left by controlling the image signal, such that outputting type is switched between a front projection in which the image is projected onto the screen from a front on the same side as the viewing side, and a rear projection in which the image is projected onto the screen from a rear plane on the opposite side to the viewing side.

摘要翻译： 提供了一种用于在屏幕上投影图像的显示装置的光源装置，所述显示装置用光源装置包括可操作以输出光的光源单元; 图像输出单元，用于通过向所述光提供图像信号来输出图像; 以及控制电路，其可操作以通过控制图像信号来切换从图像输出单元输出的图像在正常图像和通过反转正常图像而形成的镜像反转图像之间，使得输出类型在前投影 其中图像从与观看侧相同侧的前部投影到屏幕上，以及后投影，其中图像从与观看侧相反的一侧的后平面投影到屏幕上。

公开(公告)号：US20060027325A1

公开(公告)日：2006-02-09

申请号：US11243548

申请日：2005-10-04

申请人： Yoshihiro Tezuka ,  Toshifumi Yokoyama ,  Tsukasa Abe

发明人： Yoshihiro Tezuka ,  Toshifumi Yokoyama ,  Tsukasa Abe

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： G03F1/36 ,  G03F1/80

摘要： The invention provides methods and apparatuses for controlling critical dimension (CD) uniformity of a photomask by neutralizing CD variation associated with pattern density and process fluctuation.

摘要翻译： 本发明提供了通过中和与图案密度和工艺波动相关联的CD变化来控制光掩模的临界尺寸（CD）均匀性的方法和装置。

公开(公告)号：US06764792B1

公开(公告)日：2004-07-20

申请号：US09830598

申请日：2001-04-27

申请人： Junji Fujikawa ,  Yoshinori Kinase ,  Takafumi Okamura ,  Hiroshi Mohri ,  Toshifumi Yokoyama ,  Haruo Kokubo

发明人： Junji Fujikawa ,  Yoshinori Kinase ,  Takafumi Okamura ,  Hiroshi Mohri ,  Toshifumi Yokoyama ,  Haruo Kokubo

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/58

摘要： The invention relates to a halftone phase shift photomask which is controlled with precision in terms of its transmittance at a wavelength applied to inspection, and measuring equipment, so that its quality can easily be assured even when its phase difference at an exposure wavelength is controlled at 180° C. with precision and its transmittance is set at 1 to 20% as desired at that wavelength. The halftone phase shift photomask (107) comprises on a transparent substrate (101) and a halftone phase shift film containing at least tantalum, oxygen, carbon and nitrogen, and has a multilayer structure comprising at least two or more different layers (102) and (103).

摘要翻译： 本发明涉及一种半色调相移光掩模，其在对检查的波长的透射率和测量设备方面进行精确控制，使得即使将其在曝光波长处的相位差控制在 180℃，其透过率根据需要设定在1〜20％。 半色调相移光掩模（107）包括在透明基板（101）和至少含有钽，氧，碳和氮的半色调相移膜，并且具有包括至少两个或多个不同层（102）和 （103）。