公开(公告)号：US07679731B2

公开(公告)日：2010-03-16

申请号：US11323258

申请日：2005-12-30

申请人： Yoshihiro Tezuka

发明人： Yoshihiro Tezuka

IPC分类号： G01N21/00

CPC分类号： G03F1/84 ,  B82Y10/00 ,  B82Y40/00 ,  G01N21/4788 ,  G01N2021/8822 ,  G01N2021/95676 ,  G03F1/24

摘要： An embodiment of the present invention is a technique to inspect defects in mask blanks. A first iris diaphragm is located at an illumination source to limit an illumination angle of light emitted from the illumination source. A scattering limit unit is located at exit of a dark field optical unit to limit scattering angle of the light scattered after reflecting from a mask blank. A defect analyzer is optically coupled to the dark field optical unit to generate an angular distribution of the scattered light. The angular distribution is used to characterize criticality of a defect found on the mask blank.

摘要翻译： 本发明的一个实施例是一种检查掩模毛坯中的缺陷的技术。 第一光阑位于照明源处，以限制从照明源发射的光的照射角度。 散射极限单元位于暗场光学单元的出口处，以限制从掩模坯料反射后散射的光的散射角。 缺陷分析仪光耦合到暗场光学单元以产生散射光的角分布。 角分布用于表征掩模空白上发现的缺陷的临界性。

公开(公告)号：US20070188743A1

公开(公告)日：2007-08-16

申请号：US11707127

申请日：2007-02-16

申请人： Toshihiko Tanaka ,  Tsuneo Terasawa ,  Yoshihiro Tezuka

发明人： Toshihiko Tanaka ,  Tsuneo Terasawa ,  Yoshihiro Tezuka

IPC分类号： G01N21/88 ,  G01N21/00

CPC分类号： G01N21/956 ,  B82Y10/00 ,  B82Y40/00 ,  G01N2021/8822 ,  G01N2021/95676 ,  G03F1/24 ,  G03F1/84

摘要： Defect detection is performed with two settings, that is, setting of a focus position where a signal intensity obtained from a dot pattern is maximum and setting of a focus position where a signal intensity obtained from a hole pattern is maximum. In addition, defect detection is performed at a predetermined focus position previously set and for the detected defect, the focus position is changed at that position to find a focus position where the signal intensity is maximum. If the focus position is away from a signal light-receiving system, the defect is determined as dot-shaped. If the focus position is close to the signal light-receiving system, the defect is determined as hole-shaped. If the focus position is intermediate of them, the defect is determined as an elongated-shaped.

摘要翻译： 通过两种设置执行缺陷检测，即，从点图案获得的信号强度设置为最大的聚焦位置的设置和从孔图案获得的信号强度的最大焦点位置的设置。 此外，在预先设定的预定焦点位置执行缺陷检测，对于检测到的缺陷，在该位置改变焦点位置以找到信号强度最大的聚焦位置。 如果聚焦位置远离信号光接收系统，则该缺陷被确定为点状。 如果聚焦位置靠近信号光接收系统，则将该缺陷确定为孔形。 如果焦点位置是它们的中间位置，则将缺陷确定为细长形状。

公开(公告)号：US07005649B1

公开(公告)日：2006-02-28

申请号：US10971786

申请日：2004-10-21

申请人： Yoshihiro Tezuka ,  Masaaki Ito

发明人： Yoshihiro Tezuka ,  Masaaki Ito

IPC分类号： G01J1/42

CPC分类号： G01N21/9505 ,  G01N21/47 ,  G01N21/9501 ,  G01N2021/8822 ,  G01N2021/95676

摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.

摘要翻译： 实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。 可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。 归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。 可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。

公开(公告)号：US06979408B2

公开(公告)日：2005-12-27

申请号：US10334662

申请日：2002-12-30

申请人： Yoshihiro Tezuka ,  Toshifumi Yokoyama ,  Tsukasa Abe

发明人： Yoshihiro Tezuka ,  Toshifumi Yokoyama ,  Tsukasa Abe

IPC分类号： C23F1/00 ,  G03F1/00 ,  G03F1/36 ,  H01L21/00

CPC分类号： G03F1/36 ,  G03F1/80

摘要： The invention provides methods and apparatuses for controlling critical dimension (CD) uniformity of a photomask by neutralizing CD variation associated with pattern density and process fluctuation.

摘要翻译： 本发明提供了通过中和与图案密度和工艺波动相关联的CD变化来控制光掩模的临界尺寸（CD）均匀性的方法和装置。

公开(公告)号：US20060138338A1

公开(公告)日：2006-06-29

申请号：US11299202

申请日：2005-12-09

申请人： Yoshihiro Tezuka ,  Masaaki Ito

发明人： Yoshihiro Tezuka ,  Masaaki Ito

IPC分类号： G01J1/42

CPC分类号： G01N21/9505 ,  G01N21/47 ,  G01N21/9501 ,  G01N2021/8822 ,  G01N2021/95676

摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.

摘要翻译： 实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。 可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。 归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。 可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。

公开(公告)号：US20060027325A1

公开(公告)日：2006-02-09

申请号：US11243548

申请日：2005-10-04

申请人： Yoshihiro Tezuka ,  Toshifumi Yokoyama ,  Tsukasa Abe

发明人： Yoshihiro Tezuka ,  Toshifumi Yokoyama ,  Tsukasa Abe

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： G03F1/36 ,  G03F1/80

摘要： The invention provides methods and apparatuses for controlling critical dimension (CD) uniformity of a photomask by neutralizing CD variation associated with pattern density and process fluctuation.

摘要翻译： 本发明提供了通过中和与图案密度和工艺波动相关联的CD变化来控制光掩模的临界尺寸（CD）均匀性的方法和装置。

公开(公告)号：US06210843B1

公开(公告)日：2001-04-03

申请号：US09447088

申请日：1999-11-22

申请人： Fred T. Chen ,  Wilman Tsai ,  Yoshihiro Tezuka ,  Steven Labovitz ,  Jeff N. Farnsworth

发明人： Fred T. Chen ,  Wilman Tsai ,  Yoshihiro Tezuka ,  Steven Labovitz ,  Jeff N. Farnsworth

IPC分类号： G03F900

CPC分类号： G03F7/70558 ,  G03F1/78 ,  G03F7/70383 ,  H01J2237/3175

摘要： A method is described comprising depositing a layer of resist on a mask substrate having transparent and opaque layers. The resist layer is then exposed to radiation. The radiation is patterned to produce features within an active device area and a moat surrounding the active device area. The radiation is also controlled to have a differential increased incident energy in the moat area of the mask compared to the active device area. Specifically, the exposure dose applied to the moat is greater than that normally required to completely remove the resist during the developing stage. The magnitude of the additional exposure dose is empirically derived and is based upon such factors as the type of resist and the thickness of the resist.

摘要翻译： 描述了一种方法，包括在具有透明和不透明层的掩模基板上沉积抗蚀剂层。 然后将抗蚀剂层暴露于辐射。 将辐射图案化以产生有源器件区域内的特征和围绕有源器件区域的护环。 与有源器件区域相比，辐射也被控制为在掩模的护环区域中具有差异增加的入射能量。 具体地说，施加到护城河的曝光剂量大于在显影阶段完全除去抗蚀剂所需的曝光剂量。 附加暴露剂量的大小是经验性地得出的，并且基于抗蚀剂的类型和抗蚀剂的厚度等因素。

公开(公告)号：US5942282A

公开(公告)日：1999-08-24

申请号：US071156

申请日：1998-05-04

申请人： Kunihiro Tada ,  Yoshihiro Tezuka ,  Kazuichi Hayashi

发明人： Kunihiro Tada ,  Yoshihiro Tezuka ,  Kazuichi Hayashi

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  C23C16/06

CPC分类号： C23C16/45572 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/4557 ,  H01L21/28556

摘要： A first pre-coating film forming gas containing titanium is supplied into a process chamber in which a susceptor for supporting a wafer is located, at the same time heating the susceptor to thereby form, on the susceptor, a first pre-coating film containing titanium as a main component, and then a second pre-coating film forming gas containing titanium and nitrogen is supplied into the process chamber to thereby form, on the pre-coating first film, a second pre-coating film containing titanium nitride as a main component. The wafer is mounted on a part of the second pre-coating film susceptor. A first film forming gas containing titanium is supplied into the process chamber, at the same time heating the susceptor to thereby form, on the wafer, a first film containing titanium as a main component, and then a second film forming gas containing titanium and nitrogen is supplied into the process chamber to thereby form, on the first film on the wafer, a second film containing titanium nitride as a main component.

摘要翻译： 将含有钛的第一预涂膜成膜气体供给到处理室中，其中用于支撑晶片的基座位于其中，同时加热基座，从而在基座上形成含有钛的第一预涂膜 作为主要成分，然后将含有钛和氮的第二预涂膜形成气体供给到处理室中，从而在预涂覆的第一膜上形成含有氮化钛作为主要成分的第二预涂膜 。 晶片安装在第二预涂膜基座的一部分上。 将含有钛的第一成膜气体供给到处理室中，同时加热基座，从而在晶片上形成含有钛作为主要成分的第一膜，然后形成含有钛和氮的第二成膜气体 被供给到处理室中，从而在晶片上的第一膜上形成含有氮化钛作为主要成分的第二膜。

公开(公告)号：US07220969B2

公开(公告)日：2007-05-22

申请号：US11299202

申请日：2005-12-09

申请人： Yoshihiro Tezuka ,  Masaaki Ito

发明人： Yoshihiro Tezuka ,  Masaaki Ito

IPC分类号： G01J1/42

CPC分类号： G01N21/9505 ,  G01N21/47 ,  G01N21/9501 ,  G01N2021/8822 ,  G01N2021/95676

摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.

摘要翻译： 实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。 可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。 归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。 可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。

公开(公告)号：US20060054836A1

公开(公告)日：2006-03-16

申请号：US10971786

申请日：2004-10-21

申请人： Yoshihiro Tezuka ,  Masaaki Ito

发明人： Yoshihiro Tezuka ,  Masaaki Ito

IPC分类号： G01N21/55

CPC分类号： G01N21/9505 ,  G01N21/47 ,  G01N21/9501 ,  G01N2021/8822 ,  G01N2021/95676

摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.

摘要翻译： 实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。 可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。 归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。 可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。