公开(公告)号：US10597854B1

公开(公告)日：2020-03-24

申请号：US16387563

申请日：2019-04-18

Applicant: Hsiang-Hung Wang ,  Yu-Chang Lin

Inventor： Hsiang-Hung Wang ,  Yu-Chang Lin

IPC: E03C1/046

Abstract: A sensing faucet for the integration of soap supply with water exit includes a main body configured with a mounting portion having a first mounting zone and second mounting zone, where the first mounting zone is used to accept a water supply module, and the second mounting zone a soap supply module, where an obtuse angle is formed between the first and second mounting zones. With the above structure, the soap supply module can conform to a human factor design besides the water and soap supply modules are integrated with each other in the same sensing faucet, allowing users direct soap supply according hand washing habits without needing to touch any other components, and the hand cleaning convenience can then be achieved.

公开(公告)号：US20170218606A1

公开(公告)日：2017-08-03

申请号：US15008448

申请日：2016-01-28

Applicant: Hsiang-Hung Wang ,  Yu-Chang Lin

Inventor： Hsiang-Hung Wang ,  Yu-Chang Lin

IPC: E03C1/05 ,  F16K31/06

CPC classification number: E03C1/055 ,  E03C1/057

Abstract: An activation device for an electronic faucet comprises a body, a shell, and a battery. It is further characterized in that a wireless transmission module is arranged at the shell and electrically connected with the battery pack. The wireless transmission module has an activation switch which has a timer to be set to turn on/off the wireless transmission module. Therefore, the wireless transmission module may be not continuously operated so as to effectively reduce the power loss.

公开(公告)号：US09603494B1

公开(公告)日：2017-03-28

申请号：US14932982

申请日：2015-11-05

Applicant: Hsiang-Hung Wang ,  Yu-Chang Lin

Inventor： Hsiang-Hung Wang ,  Yu-Chang Lin

IPC: A47K5/14 ,  A47K5/12 ,  B05B11/00

CPC classification number: A47K5/14 ,  A47K5/1211 ,  A47K5/1217 ,  B05B11/3087

Abstract: A foamed soap dispensing structure comprises a container, a cover set, a faucet, and a foaming unit. The foaming unit has a foaming member and an outer ring. The foaming member has two inlets and a foam material. The outer ring has an assembling end corresponding to a connection end of a soap providing portion of the faucet. When the foaming unit is clogged, the foaming unit may be pulled out by an user so that the assembling end may be separated from the connection end of the soap providing portion to easily replace the foaming member and then to achieve the effect of easy construction.

公开(公告)号：US20090067105A1

公开(公告)日：2009-03-12

申请号：US11852799

申请日：2007-09-10

Applicant: Shu-Huei Lin ,  Chong-Gim Gan ,  Yi-Hsun Wu ,  Yu-Chang Lin

Inventor： Shu-Huei Lin ,  Chong-Gim Gan ,  Yi-Hsun Wu ,  Yu-Chang Lin

IPC: H02H9/04

CPC classification number: H01L27/0266

Abstract: A system includes a driving device operating at first supply voltage Vdd1 and having a CMOS output. A driven devise operates at a second supply voltage Vdd2 lower than the first supply voltage Vdd1, and has a CMOS input with an NMOS pull-down transistor. A protection circuit includes a first resistor coupled to the CMOS output of the driving device and a gate of the NMOS pull-down transistor. A parasitic NPN bipolar junction transistor has a drain connected to the gate of the NMOS pull-down transistor sad a source coupled to a lower-voltage supply rail VSS. A second resistor connects a gate of the parasitic NPN bipolar junction transistor to Vss. The second resistor has a resistance sized for controlling a trigger voltage of the parasitic NPN bipolar junction transistor for protecting a gate oxide layer of the NMOS pull-down transistor from an electrostatic discharge.

Abstract translation: 系统包括以第一电源电压Vdd1操作并具有CMOS输出的驱动装置。 驱动装置在低于第一电源电压Vdd1的第二电源电压Vdd2下工作，并具有带NMOS下拉晶体管的CMOS输入。 保护电路包括耦合到驱动装置的CMOS输出的第一电阻器和NMOS下拉晶体管的栅极。 寄生NPN双极结晶体管具有连接到NMOS下拉晶体管的栅极的漏极和耦合到较低电压电源轨VSS的源极。 第二个电阻将寄生NPN双极结晶体管的栅极连接到Vss。 第二电阻器的电阻大小用于控制寄生NPN双极结晶体管的触发电压，用于保护NMOS下拉晶体管的栅氧化层免受静电放电。

公开(公告)号：US20080074130A1

公开(公告)日：2008-03-27

申请号：US11527696

申请日：2006-09-27

Applicant: Yian-Liang Kuo ,  Yu-Chang Lin ,  Yu-Ting Lin

Inventor： Yian-Liang Kuo ,  Yu-Chang Lin ,  Yu-Ting Lin

IPC: G01R31/02

CPC classification number: G01R1/07307 ,  G01R31/046 ,  G01R31/2896

Abstract: An apparatus and method for testing conductive bumps are provided. An exemplary embodiment of a bump testing unit comprises a support substrate with two probes protruding one surface thereof. A digital detecting device is embedded in the support substrate, comprising a first and second input terminals and an output terminal, wherein the input terminals electrically connects one of the probes.

公开(公告)号：US20070111341A1

公开(公告)日：2007-05-17

申请号：US11619313

申请日：2007-01-03

Applicant: Yu-Chang Lin

Inventor： Yu-Chang Lin

IPC: H01L21/66 ,  H01L23/58 ,  H01L21/8242

CPC classification number: H01L27/0207 ,  G11C11/401 ,  G11C29/006 ,  G11C29/50 ,  G11C2029/5006 ,  H01L22/34 ,  H01L27/10861

Abstract: A test device for detecting current leakage between deep trench capacitors in DRAM devices. The test device is disposed in a scribe line region of a wafer. In the test device, a first trench capacitor pair has a first deep trench capacitor and a second deep trench capacitor connected in parallel. A first transistor has a first terminal electrically coupled to the first deep trench capacitor and a control terminal electrically coupled to a first word line. A second transistor has a first terminal electrically coupled to the second deep trench capacitor and a control terminal electrically coupled to a second word line. First and second bit lines are electrically coupled to the first and second transistors respectively. The first and second bit lines are separated and the first and second word lines are perpendicular to the bit line regions.

Abstract translation: 一种用于检测DRAM器件中深沟槽电容器之间的电流泄漏的测试装置。 测试装置设置在晶片的划线区域中。 在测试装置中，第一沟槽电容器对具有并联连接的第一深沟槽电容器和第二深沟槽电容器。 第一晶体管具有电耦合到第一深沟槽电容器的第一端子和电耦合到第一字线的控制端子。 第二晶体管具有电耦合到第二深沟槽电容器的第一端子和电耦合到第二字线的控制端子。 第一和第二位线分别电耦合到第一和第二晶体管。 第一和第二位线被分离，第一和第二字线垂直于位线区域。

公开(公告)号：US07218565B2

公开(公告)日：2007-05-15

申请号：US10707652

申请日：2003-12-30

Applicant: Yu-Chang Lin ,  Ying-Te Tu

Inventor： Yu-Chang Lin ,  Ying-Te Tu

IPC: G11C7/00

CPC classification number: G11C11/406 ,  G11C2211/4065

Abstract: A method for refreshing a memory capacitor is provided. First, the refresh controller provides a refresh control signal. The pre-decoded row address counter counts and outputs a regular pre-decoded row address in response to the refresh control signal. The regular pre-decoded row address is inputted to the pre-decoded row address re-driver to obtain a row address. The memory capacitor in response to the row address is refreshed.

Abstract translation: 提供一种刷新存储电容器的方法。 首先，刷新控制器提供刷新控制信号。 预编码行地址计数器响应于刷新控制信号计数并输出常规预解码行地址。 常规预解码行地址被输入到预解码行地址重新驱动器以获得行地址。 响应于行地址的存储电容被刷新。