公开(公告)号：US06521911B2

公开(公告)日：2003-02-18

申请号：US09908766

申请日：2001-07-19

申请人： Gregory N. Parsons ,  James J. Chambers ,  M. Jason Kelly

发明人： Gregory N. Parsons ,  James J. Chambers ,  M. Jason Kelly

IPC分类号： H01L2904

CPC分类号： C23C14/5806 ,  B82Y10/00 ,  C23C8/80 ,  C23C14/022 ,  C23C14/024 ,  C23C14/185 ,  C23C14/5853 ,  C23C14/586 ,  C23C26/00 ,  H01L21/28518 ,  H01L21/31604 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/3185 ,  H01L21/32105

摘要： A method of forming an insulation layer on a semiconductor substrate includes modifying a surface of a semiconductor substrate with a metal or a metal-containing compound and oxygen to form an insulation layer on the surface of the semiconductor substrate, wherein the insulation layer comprises the metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon bonds.