System and method for in-line metal profile measurement
    41.
    发明申请
    System and method for in-line metal profile measurement 审中-公开
    在线金属型材测量的系统和方法

    公开(公告)号:US20060246822A1

    公开(公告)日:2006-11-02

    申请号:US11479299

    申请日:2006-06-29

    IPC分类号: B24B51/00 B24B7/30 B24B29/00

    摘要: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

    摘要翻译: 一种系统包括用于将涡流探针靠近衬底保持器中的衬底定位的测量站。 探针可以产生时变磁场,以便在抛光之前或之后在衬底的一个或多个导电区域中引起涡流。 检测涡流信号,并可用于更新化学机械抛光系统的一个或多个抛光参数。 衬底保持器可以位于多个位置; 例如,在基板传送系统,工厂接口模块,清洁器或化学机械抛光系统的远离抛光站的一部分中。 可以使用附加的探针。

    System and method for in-line metal profile measurement
    45.
    发明授权
    System and method for in-line metal profile measurement 有权
    在线金属型材测量的系统和方法

    公开(公告)号:US06811466B1

    公开(公告)日:2004-11-02

    申请号:US10330685

    申请日:2002-12-27

    IPC分类号: B24B4900

    摘要: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

    摘要翻译: 一种系统包括用于将涡流探针靠近衬底保持器中的衬底定位的测量站。 探针可以产生时变磁场,以便在抛光之前或之后在衬底的一个或多个导电区域中引起涡流。 检测涡流信号,并可用于更新化学机械抛光系统的一个或多个抛光参数。 衬底保持器可以位于多个位置; 例如,在基板传送系统,工厂接口模块,清洁器或化学机械抛光系统的远离抛光站的一部分中。 可以使用附加的探针。

    Method for in-situ endpoint detection for chemical mechanical polishing operations
    47.
    发明授权
    Method for in-situ endpoint detection for chemical mechanical polishing operations 有权
    化学机械抛光操作的原位终点检测方法

    公开(公告)号:US06537133B1

    公开(公告)日:2003-03-25

    申请号:US09672549

    申请日:2000-09-28

    IPC分类号: B24B4900

    摘要: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

    摘要翻译: 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光(CMP)的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪,以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。

    Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
    48.
    发明授权
    Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations 失效
    用于化学机械抛光操作的原位终点检测的装置和方法

    公开(公告)号:US08506356B2

    公开(公告)日:2013-08-13

    申请号:US12850569

    申请日:2010-08-04

    IPC分类号: B24B49/12

    摘要: An apparatus for chemical mechanical polishing (CMP) of a wafer has a rotatable platen to hold a polishing pad, a polishing head for holding the wafer against the polishing pad, an optical monitoring system and a position sensor. The platen has a hole therein, the optical monitoring system includes a light source to direct a light beam through the aperture toward the wafer from a side of the wafer contacting the polishing pad and a detector to receive reflections of the light beam from the wafer, and the position sensor senses when the hole is adjacent the wafer such that the light beam generated by the light source can pass through the hole and impinge on the wafer.

    摘要翻译: 晶片的化学机械抛光(CMP)的装置具有可旋转的压板以保持抛光垫,用于将晶片保持在抛光垫上的抛光头,光学监视系统和位置传感器。 压板在其中具有孔,光学监测系统包括光源,用于将光束通过孔径朝向晶片从晶片接触抛光垫的侧面和检测器接收来自晶片的光束的反射, 并且位置传感器感测孔何时邻近晶片,使得由光源产生的光束可以穿过孔并撞击晶片。

    MONITORING A METAL LAYER DURING CHEMICAL MECHANICAL POLISHING
    49.
    发明申请
    MONITORING A METAL LAYER DURING CHEMICAL MECHANICAL POLISHING 审中-公开
    在化学机械抛光期间监测金属层

    公开(公告)号:US20070212987A1

    公开(公告)日:2007-09-13

    申请号:US11749843

    申请日:2007-05-17

    IPC分类号: B24B17/10

    摘要: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

    摘要翻译: 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯,围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。

    Monitoring a metal layer during chemical mechanical polishing
    50.
    发明授权
    Monitoring a metal layer during chemical mechanical polishing 有权
    在化学机械抛光期间监测金属层

    公开(公告)号:US07229340B2

    公开(公告)日:2007-06-12

    申请号:US11355418

    申请日:2006-02-15

    IPC分类号: B24B49/00 B24B1/00

    摘要: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

    摘要翻译: 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯,围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。