公开(公告)号：US07775852B2

公开(公告)日：2010-08-17

申请号：US11099789

申请日：2005-04-05

申请人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

发明人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

IPC分类号： B24B49/12

CPC分类号： H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

摘要翻译： 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光（CMP）的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪，以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。

公开(公告)号：US20050170751A1

公开(公告)日：2005-08-04

申请号：US11099789

申请日：2005-04-05

申请人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

发明人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

IPC分类号： B24B37/04 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  B24D7/12 ,  B24D13/14 ,  G01B11/06 ,  B24B49/00

CPC分类号： H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

公开(公告)号：US06719818B1

公开(公告)日：2004-04-13

申请号：US09028412

申请日：1998-02-24

申请人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

发明人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

IPC分类号： B24B100

CPC分类号： B24B37/205 ,  B24B37/013 ,  B24B37/22 ,  B24B49/12 ,  B24D7/12 ,  Y10T428/24273 ,  Y10T428/24289 ,  Y10T428/249978

摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

公开(公告)号：US06537133B1

公开(公告)日：2003-03-25

申请号：US09672549

申请日：2000-09-28

申请人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

发明人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

IPC分类号： B24B4900

CPC分类号： B24B47/12 ,  B24B37/013 ,  B24B37/205 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

摘要翻译： 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光（CMP）的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪，以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。

公开(公告)号：US20130130413A1

公开(公告)日：2013-05-23

申请号：US13745691

申请日：2013-01-18

申请人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

发明人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

摘要： An endpoint detection method includes processing an outer surface of a substrate, directing an incident light beam through a window in an opaque metal body onto the surface being processed, receiving at a detector a reflected light beam from the substrate and generating a signal from the detector, and generating a signal based on the reflected light beam received at the detector, and detecting a processing endpoint. The signal is a time-varying cyclic signal that varies as the thickness of the layer varies over time, and detecting the processing endpoint includes detecting that a portion of a cycle of the cyclic signal has passed, the portion being less than a full cycle of the cyclic signal.

摘要翻译： 端点检测方法包括处理衬底的外表面，将入射光束通过不透明金属体中的窗口引导到被处理的表面上，在检测器处接收来自衬底的反射光束，并从检测器产生信号 并且基于在检测器处接收的反射光产生信号，并且检测处理端点。 该信号是时变循环信号，其随着层的厚度随时间而变化，并且检测处理端点包括检测循环信号的周期的一部分已经过去，该部分小于全周期 循环信号。

公开(公告)号：US20100297917A1

公开(公告)日：2010-11-25

申请号：US12850569

申请日：2010-08-04

申请人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

发明人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

IPC分类号： B24B49/04 ,  B24B49/12

CPC分类号： H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

摘要： An apparatus for chemical mechanical polishing (CMP) of a wafer has a rotatable platen to hold a polishing pad, a polishing head for holding the wafer against the polishing pad, an optical monitoring system and a position sensor. The platen has a hole therein, the optical monitoring system includes a light source to direct a light beam through the aperture toward the wafer from a side of the wafer contacting the polishing pad and a detector to receive reflections of the light beam from the wafer, and the position sensor senses when the hole is adjacent the wafer such that the light beam generated by the light source can pass through the hole and impinge on the wafer.

摘要翻译： 晶片的化学机械抛光（CMP）的装置具有可旋转的压板以保持抛光垫，用于将晶片保持在抛光垫上的抛光头，光学监视系统和位置传感器。 压板在其中具有孔，光学监测系统包括光源，用于将光束通过孔径朝向晶片从晶片接触抛光垫的侧面和检测器接收来自晶片的光束的反射， 并且位置传感器感测孔何时邻近晶片，使得由光源产生的光束可以穿过孔并撞击晶片。

公开(公告)号：US08506356B2

公开(公告)日：2013-08-13

申请号：US12850569

申请日：2010-08-04

申请人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

发明人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

IPC分类号： B24B49/12

CPC分类号： H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

摘要： An apparatus for chemical mechanical polishing (CMP) of a wafer has a rotatable platen to hold a polishing pad, a polishing head for holding the wafer against the polishing pad, an optical monitoring system and a position sensor. The platen has a hole therein, the optical monitoring system includes a light source to direct a light beam through the aperture toward the wafer from a side of the wafer contacting the polishing pad and a detector to receive reflections of the light beam from the wafer, and the position sensor senses when the hole is adjacent the wafer such that the light beam generated by the light source can pass through the hole and impinge on the wafer.

摘要翻译： 晶片的化学机械抛光（CMP）的装置具有可旋转的压板以保持抛光垫，用于将晶片保持在抛光垫上的抛光头，光学监视系统和位置传感器。 压板在其中具有孔，光学监测系统包括光源，用于将光束通过孔径朝向晶片从晶片接触抛光垫的侧面和检测器接收来自晶片的光束的反射， 并且位置传感器感测孔何时邻近晶片，使得由光源产生的光束可以穿过孔并撞击晶片。

公开(公告)号：US20070015441A1

公开(公告)日：2007-01-18

申请号：US11532501

申请日：2006-09-15

申请人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

发明人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

IPC分类号： B24B49/00 ,  B24B7/30

CPC分类号： H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

摘要翻译： 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光（CMP）的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪，以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。

公开(公告)号：US06876454B1

公开(公告)日：2005-04-05

申请号：US09399310

申请日：1999-09-20

申请人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

发明人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

IPC分类号： B24B37/04 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  B24D7/12 ,  B24D13/14 ,  G01B11/06 ,  G01B9/02 ,  B24B49/00 ,  G01B11/28

CPC分类号： H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

公开(公告)号：US07500901B2

公开(公告)日：2009-03-10

申请号：US11222561

申请日：2005-09-08

申请人： Boguslaw A. Swedek ,  Nils Johansson ,  Manoocher Birang

发明人： Boguslaw A. Swedek ,  Nils Johansson ,  Manoocher Birang

IPC分类号： B24B49/00 ,  B24B51/00

CPC分类号： B24B37/013 ,  B24B49/10

摘要： Methods and apparatus to implement techniques for monitoring polishing a substrate. Two or more data points are acquired, where each data point has a value affected by features inside a sensing region of a sensor and corresponds to a relative position of the substrate and the sensor as the sensing region traverses through the substrate. A set of reference points is used to modify the acquired data points. The modification compensates for distortions in the acquired data points caused by the sensing region traversing through the substrate. Based on the modified data points, a local property of the substrate is evaluated to monitor polishing.

摘要翻译： 实施用于监测抛光衬底的技术的方法和装置。 获取两个或多个数据点，其中每个数据点具有受传感器感测区域内的特征影响的值，并且对应于感测区域穿过衬底的衬底和传感器的相对位置。 一组参考点用于修改采集的数据点。 该修改补偿由穿过衬底的感测区域引起的所获取的数据点中的失真。 基于修改的数据点，评估基板的局部特性以监测抛光。