公开(公告)号：US5231291A

公开(公告)日：1993-07-27

申请号：US821888

申请日：1992-01-17

申请人： Mitsuaki Amemiya ,  Eiji Sakamoto ,  Koji Uda ,  Kunitaka Ozawa ,  Kazunori Iwamoto ,  Shunichi Uzawa ,  Mitsuji Marumo

发明人： Mitsuaki Amemiya ,  Eiji Sakamoto ,  Koji Uda ,  Kunitaka Ozawa ,  Kazunori Iwamoto ,  Shunichi Uzawa ,  Mitsuji Marumo

IPC分类号： G03F7/20 ,  H01L21/00 ,  H01L21/687

CPC分类号： H01L21/67109 ,  G03F7/2041 ,  G03F7/707 ,  G03F7/70866 ,  G03F7/70875

摘要： A wafer table includes a wafer holding surface for holding a wafer by attraction; a flow passageway through which a temperature adjusting medium flows to remove any heat in the wafer table; a temperature measuring system for measuring the temperature of the wafer held by the wafer holding surface; a temperature adjusting system disposed between the wafer holding surface and the flow passageway; a temperature setting system for setting a temperature related to the wafer held by the wafer holding surface; a flow rate controlling system for controlling the flow rate of the temperature adjusting medium to be circulated through the flow passageway; and a temperature controlling system for controlling the operation of the temperature adjusting system related to heat, on the basis of a value set by the temperature setting system and a value measured by the temperature measuring system.

摘要翻译： 晶片台包括用于通过吸引保持晶片的晶片保持表面; 流动通道，温度调节介质通过该通道流动以去除晶片台中的任何热量; 用于测量由晶片保持表面保持的晶片的温度的温度测量系统; 设置在晶片保持表面和流动通道之间的温度调节系统; 用于设定与晶片保持面保持的晶片有关的温度的温度设定系统; 流量控制系统，用于控制温度调节介质流过所述流动通道的流量; 以及温度控制系统，用于基于由温度设定系统设定的值和由温度测量系统测量的值来控制与热量相关的温度调节系统的操作。

公开(公告)号：US4935947A

公开(公告)日：1990-06-19

申请号：US309918

申请日：1989-02-07

申请人： Mitsuaki Amemiya

发明人： Mitsuaki Amemiya

IPC分类号： G03F7/20 ,  H05G2/00

CPC分类号： H05G2/003 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70166

摘要： A device for generating X-rays is disclosed, which includes a portion for producing plasma in a predetermined space, for generation of the X-rays, and a wall uni effective to define a surface substantially surrounding the space, the wall unit including a portion which is made of a dielectric material and which is made movable so as to compensate for consumption of the dielectric material due to the production of the plasma by the plasma producing portion. Also, an X-ray exposure apparatus usable with a mask having a pattern and a wafer, for transferring the pattern of the mask onto the wafer, is disclosed. The apparatus includes an X-ray source for producing X-rays, an exposure system for exposing the mask and the wafer under an exposure condition, the exposing system including a holder for holding the mask and the wafer so that the mask is exposed to the X-rays from the X-ray source and so that the wafer is exposed to the X-rays passed through the mask, such that the pattern of the mask is transferred onto the wafer, and a control system for controlling the exposure condition so that the pattern transferred onto the wafer has a desired width of line.

摘要翻译： 公开了一种用于产生X射线的装置，其包括用于产生X射线的在预定空间中产生等离子体的部分，以及有效地限定基本上围绕该空间的表面的壁，所述壁单元包括一部分 其由电介质材料制成，并且其可移动以便补偿由等离子体产生部分产生的等离子体导致的电介质材料的消耗。 此外，公开了一种可用于具有图案和晶片的掩模的X射线曝光装置，用于将掩模的图案转印到晶片上。 该装置包括用于产生X射线的X射线源，用于在曝光条件下曝光掩模和晶片的曝光系统，所述曝光系统包括用于保持掩模和晶片的保持器，使得掩模暴露于 并且使得晶片暴露于穿过掩模的X射线，使得掩模的图案被转印到晶片上，以及用于控制曝光条件的控制系统，使得 转印到晶片上的图案具有期望的线宽。