公开(公告)号：US5254213A

公开(公告)日：1993-10-19

申请号：US601986

申请日：1990-10-23

申请人： Tokuhiko Tamaki

发明人： Tokuhiko Tamaki

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/00

CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/76802 ,  Y10S438/963

摘要： A method of forming contact windows in an insulating layer is disclosed. The contact windows extend down to an underlying metal layer which is formed under the insulating layer. The method comprises the steps of: forming an etching mask layer having openings for defining contact window regions of the insulating layer on the insulating layer; and performing an etching process using an etching gas to which a gas containing nitrogen atoms has been added, thereby etching away the contact window regions of the insulating layer through the openings of the etching mask layer to form the contact windows.

摘要翻译： 公开了一种在绝缘层中形成接触窗的方法。 接触窗口向下延伸到形成在绝缘层下面的下面的金属层。 该方法包括以下步骤：形成具有用于限定绝缘层上的绝缘层的接触窗区域的开口的蚀刻掩模层; 并且使用已经添加了含有氮原子的气体的蚀刻气体进行蚀刻处理，从而通过蚀刻掩模层的开口蚀刻绝缘层的接触窗口区域以形成接触窗口。