公开(公告)号：US20060006395A1

公开(公告)日：2006-01-12

申请号：US11172108

申请日：2005-06-30

申请人： Yoshimasa Kobayashi ,  Toru Hayase ,  Naohito Yamada

发明人： Yoshimasa Kobayashi ,  Toru Hayase ,  Naohito Yamada

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： C30B29/403 ,  C30B23/002

摘要： There is provided a method for manufacturing an aluminum nitride single crystal, the method including the steps of: preparing a raw material composition containing: aluminum oxide and/or an aluminum oxide precursor which is converted into aluminum oxide by heating, and aluminum nitride and/or an aluminum nitride precursor which is converted into aluminum nitride by heating; heating the raw material composition at 1600 to 2400° C. to synthesize aluminum nitride; and causing crystal growth of the aluminum nitride to obtain an aluminum nitride single crystal. The method is capable of obtaining an aluminum nitride single crystal which is sufficiently large for practical use at low cost in a short time and has high productivity and wide usability.

摘要翻译： 提供一种制造氮化铝单晶的方法，该方法包括以下步骤：制备含有氧化铝和/或通过加热转化为氧化铝的氧化铝前体的原料组合物，以及氮化铝和/ 或通过加热转化成氮化铝的氮化铝前体; 在1600〜2400℃下加热原料组成，合成氮化铝; 并引起氮化铝的晶体生长，得到氮化铝单晶。 该方法能够在短时间内以低成本获得足够大的实际使用的氮化铝单晶，并且具有高生产率和广泛的可用性。

公开(公告)号：US20050112444A1

公开(公告)日：2005-05-26

申请号：US10976911

申请日：2004-11-01

申请人： Tsutomu Yamazaki ,  Masaaki Nakata ,  Naohito Yamada

发明人： Tsutomu Yamazaki ,  Masaaki Nakata ,  Naohito Yamada

IPC分类号： H01M8/04

CPC分类号： H01M8/04291 ,  H01M8/04029 ,  H01M8/04164

摘要： A fuel cell system is disclosed as having a water storage device 2 whose inside is provided with two partition walls 9, 10 to divide the same into three regions R1, R2, R3, and among these, a middle region R2 is provided with a water guide pipe 11 and a water return pipe 12 through which water is taken out or returned to the region R2. The partition walls 9, 10 have communicating bores 13a1, 13a2 through which water flow is admitted.

摘要翻译： 燃料电池系统被公开为具有储水装置2，其内部设置有两个分隔壁9,10，以将其分为三个区域R 1，R 2， ，R 3 3，其中，中间区域R 2 2设置有导水管11和回水管12，水通过该导水管11和回水管12返回到 区域R 2 2。 分隔壁9,10具有连通孔13a 1，13 a 2 2，允许水流通过。

公开(公告)号：US06292346B1

公开(公告)日：2001-09-18

申请号：US09357395

申请日：1999-07-20

申请人： Masashi Ohno ,  Hirokazu Ichikawa ,  Naohito Yamada ,  Tetsuya Kawajiri

发明人： Masashi Ohno ,  Hirokazu Ichikawa ,  Naohito Yamada ,  Tetsuya Kawajiri

IPC分类号： H02N1300

CPC分类号： H01L21/67103 ,  H01L21/6831 ,  H02N13/00 ,  Y10T29/49002

摘要： A semiconductor wafer-holder having a member for holding the semiconductor wafer with a basic member made of a ceramic nitride, a cooling equipment made of a metal, and an intervened layer between the semiconductor wafer-holding member and the cooling equipment, the intervened layer being composed of a metallic foil or a carbon sheet having a thickness of not more than 500 &mgr;m.

摘要翻译： 一种半导体晶片保持器，其具有用于将半导体晶片保持为具有由陶瓷氮化物制成的基本构件的部件，由金属制成的冷却设备以及在半导体晶片保持构件和冷却设备之间的介入层，所述介入层 由金属箔或厚度不大于500μm的碳片组成。