摘要:
An electrostatic chuck includes, a base plate made of ceramic, an electrode for generating an electrostatic clamping force, and a dielectric material layer formed on the electrode and made of ceramic having a volume resistivity of not less than 1×1015 Ω·cm at 100° C. and the same main constituent as the base plate. The base plate has a higher thermal conductivity than the dielectric material layer.
摘要:
A semiconductor wafer-holder having a member for holding the semiconductor wafer with a basic member made of a ceramic nitride, a cooling equipment made of a metal, and an intervened layer between the semiconductor wafer-holding member and the cooling equipment, the intervened layer being composed of a metallic foil or a carbon sheet having a thickness of not more than 500 &mgr;m.
摘要:
An electrostatic chuck with a heater including: a base which is composed of a sintered body containing alumina, an electrode disposed in an upper part of the base, and a resistance heating element embedded in a lower part of the base. The base includes a dielectric layer between the electrode and an upper surface of the base and a supporting member between the electrode and a lower surface of the base. The dielectric layer has a carbon content of not more than 100 ppm, and the supporting member has a carbon content of 0.03 to 0.25 wt %. Moreover, the resistance heating element is formed into a coil and mainly composed of niobium.
摘要:
An electrostatic chuck includes an ESC electrode E1 that is disc-shaped in plan view, an ESC electrode E2 that is doughnut-shaped in plan view, and a dielectric layer formed to cover surfaces of the ESC electrodes E1 and E2. The dielectric layer includes a disc-shaped dielectric region R1 formed in an area corresponding to the surface of the ESC electrode E1, and a doughnut-shaped dielectric region R2 formed in an area corresponding to the surface of the ESC electrode E2, and these two dielectric regions R1 and R2 are sintered seamlessly into an integrated form. The dielectric regions R1 and R2 are formed using different materials having different volume resistivities with the same kind of sintering additives. To each of the ESC electrodes E1 and E2, a terminal for voltage application is connected so that voltage can be applied individually to the ESC electrodes E1 and E2.
摘要:
A joined body and method of producing the joined body are provided. A first member containing at least a ceramic and a second member containing at least one of a metal and a metal composite are joined with each other via a metal adhesive. The metal adhesive contains at least indium and at least one material containing at least a component capable of reducing the melting point of indium and is provided between the first and second members to provide a laminate. The laminate is heated at a temperature in a solid-liquid coexisting range of an alloy comprising indium and the indium melting point reducing component to join the first and second members.
摘要:
An electrostatic adsorption device has a dielectric layer, electrodes, a cooling member and an insulating adhesive. The dielectric layer is made of a ceramic dielectric material and has an adsorption face and a back face. The electrodes are provided on the back face of the dielectric layer and gaps are defined between the portions of the electrodes. The insulating adhesive is provided between the back face of the dielectric layer and the cooling member. The insulating adhesive covers the electrodes and the back face and is provided in the gaps.
摘要:
In a plasma processing apparatus, a temperature control of a substrate to be processed is improved. A ceramic made support member having a substantially cylindrical shape is provided in a process chamber. An upper end of the support member is airtightly connected to a back surface of a placement table by solid state bonding. A lower end of the support member is airtightly connected to a bottom of the process chamber via a lower cooling jacket and O-rings. A cooling jacket made of a disc-like aluminum block is provided in an atmosphere chamber formed inside the support member. The cooling jacket is mounted to the back surface of the placement table via a heat conductive sheet member.
摘要:
An electrostatic chuck with a heater includes: a base formed of a sintered body containing alumina; an ESC electrode provided in an upper portion side in the base; and a resistance heating body embedded in a lower portion side in the base. The base is composed of a dielectric layer from the ESC electrode to an upper surface of the base, and of a support member from the ESC electrode to a lower surface of the base. In the support member, a carbon content differs between an ESC electrode neighborhood in contact with the dielectric layer and a lower region below the ESC electrode neighborhood, a carbon content in the dielectric layer is 100 wt ppm or less, the carbon content in the ESC electrode neighborhood is 0.13 wt % or less, the carbon content in the lower region is 0.03 wt % or more and 0.5 wt % or less, and the carbon content in the ESC electrode neighborhood is smaller than the carbon content in the lower region. The resistance heating body contains niobium or platinum.
摘要:
A substrate supporting member includes: a plate-shaped ceramic body having a surface serving as a substrate supporting surface; a plate-shaped composite material body which is joined to a surface of the ceramic body opposite to the substrate supporting surface with a joint material interposed therebetween and made of porous ceramic with pores filled with metal, the composite material body having a porosity of more than 0% and not more than 5%; and a metallic plate which is joined to a surface of the composite material body opposite to the surface joined to the ceramic body with a joint material interposed therebetween.
摘要:
An electrostatic chuck includes: a base body; an electrode formed on the base body and generating coulomb force; and a dielectric layer formed on the base body and electrode, having a plurality of projections on a first main face on the side supporting a substrate attracted by the coulomb force, and supporting the substrate on the upper surfaces of these projections. The projections are arranged at substantially uniform intervals. The surface roughness (Ra) of the projection upper faces is 0.5 μm or smaller. The height of the projections is 5 to 20 μm. The relation A1/2×B2>200 is satisfied where A (number/100 cm2) is the number of the projections per unit area of 100 cm2 in the first main face, and B (μm) is the height of the projections.