Method for manufacturing aluminum nitride single crystal
    5.
    发明申请
    Method for manufacturing aluminum nitride single crystal 有权
    制造氮化铝单晶的方法

    公开(公告)号:US20060006395A1

    公开(公告)日:2006-01-12

    申请号:US11172108

    申请日:2005-06-30

    IPC分类号: H01L29/15 H01L31/0312

    CPC分类号: C30B29/403 C30B23/002

    摘要: There is provided a method for manufacturing an aluminum nitride single crystal, the method including the steps of: preparing a raw material composition containing: aluminum oxide and/or an aluminum oxide precursor which is converted into aluminum oxide by heating, and aluminum nitride and/or an aluminum nitride precursor which is converted into aluminum nitride by heating; heating the raw material composition at 1600 to 2400° C. to synthesize aluminum nitride; and causing crystal growth of the aluminum nitride to obtain an aluminum nitride single crystal. The method is capable of obtaining an aluminum nitride single crystal which is sufficiently large for practical use at low cost in a short time and has high productivity and wide usability.

    摘要翻译: 提供一种制造氮化铝单晶的方法,该方法包括以下步骤:制备含有氧化铝和/或通过加热转化为氧化铝的氧化铝前体的原料组合物,以及氮化铝和/ 或通过加热转化成氮化铝的氮化铝前体; 在1600〜2400℃下加热原料组成,合成氮化铝; 并引起氮化铝的晶体生长,得到氮化铝单晶。 该方法能够在短时间内以低成本获得足够大的实际使用的氮化铝单晶,并且具有高生产率和广泛的可用性。

    Method for manufacturing aluminum nitride single crystal
    9.
    发明授权
    Method for manufacturing aluminum nitride single crystal 有权
    制造氮化铝单晶的方法

    公开(公告)号:US07332027B2

    公开(公告)日:2008-02-19

    申请号:US11172108

    申请日:2005-06-30

    IPC分类号: C30B25/12

    CPC分类号: C30B29/403 C30B23/002

    摘要: A method for manufacturing an aluminum nitride single crystal is provided, including the steps of preparing a raw material composition containing aluminum oxide and/or an aluminum oxide precursor which is converted into aluminum oxide by heating, and aluminum nitride and/or an aluminum nitride precursor which is converted into aluminum nitride by heating, heating the raw material composition at 1600 to 2400° C. to synthesize aluminum nitride, and causing crystal growth of the aluminum nitride to obtain an aluminum nitride single crystal.

    摘要翻译: 提供了一种制造氮化铝单晶的方法,包括以下步骤:制备含有氧化铝和/或氧化铝前体的原料组合物,其通过加热转化为氧化铝,以及氮化铝和/或氮化铝前体 通过加热转化成氮化铝,在1600〜2400℃加热原料组合物,合成氮化铝,使氮化铝晶体生长,得到氮化铝单晶。