WAFER PLACEMENT TABLE
    41.
    发明申请

    公开(公告)号:US20230111137A1

    公开(公告)日:2023-04-13

    申请号:US17807401

    申请日:2022-06-17

    Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface and incorporating an electrode, a cooling base in which a refrigerant flow channel is formed, and a metal bonding layer that bonds the ceramic base with the cooling base. The cooling base includes a ceiling base made of a metal matrix composite material or a low thermal expansion metal material and defining a ceiling of the refrigerant flow channel, a grooved base of which a main component is made of the same ceramic material as a main component of the ceramic base and on a top surface of which a flow channel groove defining a bottom and a side wall of the refrigerant flow channel is provided, and a metal ceiling bonding layer that bonds a bottom surface of the ceiling base with the top surface of the grooved base.

    WAFER PLACEMENT TABLE
    42.
    发明申请

    公开(公告)号:US20220399223A1

    公开(公告)日:2022-12-15

    申请号:US17804617

    申请日:2022-05-31

    Abstract: A wafer placement table includes a ceramic substrate that has a wafer placement surface, a first electrode that is embedded in the ceramic substrate, a first power supply terminal that is inserted from a surface of the ceramic substrate opposite the wafer placement surface toward the first electrode, a first joint that joins the first electrode and the first power supply terminal to each other and a second electrode that is disposed between the wafer placement surface and the first electrode in the ceramic substrate. A linear portion that extends in the ceramic substrate from a position on the first electrode opposite the first joint to the wafer placement surface is composed of material of the ceramic substrate.

    CERAMIC HEATER WITH SHAFT
    43.
    发明申请

    公开(公告)号:US20220030668A1

    公开(公告)日:2022-01-27

    申请号:US17450704

    申请日:2021-10-13

    Abstract: A ceramic heater with a shaft includes: a ceramic plate in which resistance heating elements are embedded; a hollow ceramic shaft bonded to a surface on an opposite side of a wafer placement surface of the ceramic plate; multiple vertical grooves provided in an internal circumferential surface of the ceramic shaft in an axial direction; conductive films provided in the multiple vertical grooves, respectively; and connection members that each electrically connect a terminal of the resistance heating elements to a corresponding one of the conductive films.

    ELECTROSTATIC CHUCK ASSEMBLY, ELECTROSTATIC CHUCK, AND FOCUS RING

    公开(公告)号:US20200251371A1

    公开(公告)日:2020-08-06

    申请号:US16856224

    申请日:2020-04-23

    Abstract: An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.

    WAFER SUSCEPTOR
    45.
    发明申请
    WAFER SUSCEPTOR 审中-公开

    公开(公告)号:US20190131163A1

    公开(公告)日:2019-05-02

    申请号:US16231662

    申请日:2018-12-24

    Abstract: A wafer susceptor includes a conductive member attached to a surface of a plate, a through-hole penetrating through the plate and the conductive member, a screw hole formed in a conductive-member penetrating portion of the through-hole, a stopper surface formed in the conductive member, an insulation pipe screwed into the screw hole, and an insulating sealing member arranged between a plate-facing surface of the insulation pipe and the plate, wherein, with a contact surface of the insulation pipe coming into contact with the stopper surface of the conductive member, the insulation pipe is prevented from further advancing into the screw hole, a fore end surface of a sealing-member support portion of the insulation pipe is positioned at a predetermined position where the fore end surface does not contact the plate, and the sealing member is pressed between the plate-facing surface of the insulation pipe and the plate.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20250149369A1

    公开(公告)日:2025-05-08

    申请号:US18669836

    申请日:2024-05-21

    Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on its upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate; a base plate through-hole that penetrates the base plate in an up-down direction; an insulating tube inserted into the base plate through-hole; an adhesive layer including an insulating tube upper surface adhesion part and an insulating tube outer circumferential surface adhesion part; and a positioning structure configured to perform positioning so that a distance between the lower surface of the ceramic plate and the upper surface of the insulating tube reaches a predetermined distance.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20250132184A1

    公开(公告)日:2025-04-24

    申请号:US18638984

    申请日:2024-04-18

    Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on an upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate, and configured to include a built-in refrigerant flow path; a base plate through-hole provided between adjacent parts of the refrigerant flow path, and configured to penetrate the base plate in an up-down direction; an insulating tube provided in the base plate through-hole, and fixed; and a ceramic plate hole open to the lower surface of the ceramic plate, and provided to communicate with an inside of the insulating tube, wherein a wall thickness of the insulating tube continuously varies in a circumferential direction of the insulating tube.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20250105043A1

    公开(公告)日:2025-03-27

    申请号:US18628923

    申请日:2024-04-08

    Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a reference surface on which multiple small projections for supporting a wafer are provided and that contains an electrostatic electrode; a plug arrangement hole that is provided in the ceramic plate; an electrostatic electrode opening portion that is provided at a position in the electrostatic electrode through which the plug arrangement hole extends; a cooling plate that is provided on a lower surface of the ceramic plate; a gas hole that extends through the cooling plate and that is in communication with the plug arrangement hole; a plug that is arranged in the plug arrangement hole and that includes a gas flow path; and a raised portion that surrounds the gas flow path and that has a top surface higher than the reference surface and lower than top surfaces of the small projections.

    WAFER PLACEMENT TABLE
    49.
    发明申请

    公开(公告)号:US20250079229A1

    公开(公告)日:2025-03-06

    申请号:US18583957

    申请日:2024-02-22

    Abstract: A wafer placement table includes: a ceramic substrate that has a wafer placement surface at an upper surface of the ceramic substrate; an electrode that is incorporated in the ceramic substrate; and an electrically conductive electrode extraction portion that is incorporated in the ceramic substrate and is electrically connected to the electrode. A volume content percentage of a ceramic material that is identical to a main component of the ceramic substrate is high in the electrode extraction portion compared with the electrode.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20250079134A1

    公开(公告)日:2025-03-06

    申请号:US18588280

    申请日:2024-02-27

    Abstract: A member for semiconductor manufacturing apparatus includes a central ceramic member having a wafer placement surface on an upper surface; an annular outer circumferential ceramic member having a focus ring placement surface on an upper surface; and a conductive base member having a central support joined to the central ceramic member, and an outer circumferential support joined to the outer circumferential ceramic member, wherein an outer circumferential surface of the central ceramic member and an inner circumferential surface of the outer circumferential ceramic member each change in diameter in an up-down direction, and a maximum diameter of the outer circumferential surface of the central ceramic member is smaller than a maximum diameter of the inner circumferential surface of the outer circumferential ceramic member, and larger than a minimum diameter of the inner circumferential surface of the outer circumferential ceramic member, and the central ceramic member is insulating ceramics.

Patent Agency Ranking