MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20240186170A1

    公开(公告)日:2024-06-06

    申请号:US18346951

    申请日:2023-07-05

    CPC classification number: H01L21/6833

    Abstract: A member for a semiconductor manufacturing apparatus includes: a ceramic plate that has a wafer placement surface at an upper surface thereof; a plug disposition hole that extends through the ceramic plate in an up-down direction and that has a truncated conical space whose upper opening is larger than a lower opening thereof; a truncated conical plug that is disposed in the plug disposition hole, that allows gas to flow in the up-down direction, and whose upper surface is larger than a lower surface thereof; an adhesive layer that is provided between the plug disposition hole and the truncated conical plug; an electrically conductive baseplate that is joined to a lower surface of the ceramic plate through a joint layer; and a gas supply path that is provided in the baseplate and the joint layer and that supplies gas to the truncated conical plug.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20230290622A1

    公开(公告)日:2023-09-14

    申请号:US18158021

    申请日:2023-01-23

    Abstract: A member for a semiconductor manufacturing apparatus, includes: a base substrate that has a wafer-placement-table support and a focus-ring-placement-table support; a focus-ring placement table that is joined to the focus-ring-placement-table support; a wafer placement table that is separate from the focus-ring placement table, that overlaps an inner peripheral portion of the focus-ring placement table in plan view, and that is joined to the inner peripheral portion of the focus-ring placement table and to the wafer-placement-table support; an internal space that is surrounded by a lower surface of the wafer placement table, an outer peripheral surface of the wafer-placement-table support, an inner peripheral surface of the focus-ring placement table, and an upper surface of the focus-ring-placement-table support; and a communication path that is provided at the base substrate and that causes the internal space and an outside of the base substrate to communicate with each other.

    WAFER PLACEMENT TABLE
    5.
    发明公开

    公开(公告)号:US20230144107A1

    公开(公告)日:2023-05-11

    申请号:US17818748

    申请日:2022-08-10

    CPC classification number: H01L21/68757 H01L21/67109

    Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base having a refrigerant flow channel, and a bonding layer that bonds the ceramic base with the cooling base, wherein in an area that overlaps the wafer placement surface in plan view of the refrigerant flow channel, a distance from a ceiling surface of the refrigerant flow channel to the wafer placement surface at a most downstream part of the refrigerant flow channel is shorter than the distance at a most upstream part of the refrigerant flow channel.

    WAFER PLACEMENT TABLE
    6.
    发明申请

    公开(公告)号:US20230122013A1

    公开(公告)日:2023-04-20

    申请号:US17813643

    申请日:2022-07-20

    Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base bonded to a bottom surface of the ceramic base and having a refrigerant flow channel, a plurality of holes extending through the cooling base in an up and down direction, and a heat exchange promoting portion that is provided in an area around at least one of the plurality of holes and that promotes heat exchange between refrigerant flowing through the refrigerant flow channel and a wafer placed on the wafer placement surface.

    WAFER PLACEMENT TABLE
    7.
    发明申请

    公开(公告)号:US20230055928A1

    公开(公告)日:2023-02-23

    申请号:US17813051

    申请日:2022-07-18

    Abstract: A wafer placement table includes a ceramic base, a first cooling base, and a second cooling base. The ceramic base has a wafer placement surface and incorporates a wafer attracting electrode and a heater electrode. The first cooling base is bonded via a metal bonding layer to a surface of the ceramic base on a side opposite to the wafer placement surface and has a first refrigerant flow channel capable of switching between supply and stop of supply of first refrigerant. The second cooling base is attached via a space layer, capable of supplying heat-transfer gas, to a surface of the first cooling base on a side opposite to the metal bonding layer and has a second refrigerant flow channel capable of switching between supply and stop of supply of second refrigerant.

    ELECTROSTATIC CHUCK
    8.
    发明申请

    公开(公告)号:US20230019439A1

    公开(公告)日:2023-01-19

    申请号:US17933153

    申请日:2022-09-19

    Inventor: Tatsuya KUNO

    Abstract: An electrostatic chuck includes: a disk-shaped ceramic plate having a wafer placement surface on a surface thereof; an electrostatic electrode embedded in the ceramic plate; and gas grooves that are divided in a plurality of zones when the ceramic plate is seen from above and each of which is independently provided in the wafer placement surface so as to extend from one to the other of a pair of gas supply/discharge openings for a corresponding one of the zones. A pattern in which a gas is supplied to each of the gas grooves provided for a corresponding one of the zones is selectable between a first pattern in which the gas flows from one to the other of the pair of gas supply/discharge openings and a second pattern in which the gas flows from the other to the one of the pair of gas supply/discharge openings.

    FOCUS RING PLACEMENT TABLE
    9.
    发明申请

    公开(公告)号:US20220399190A1

    公开(公告)日:2022-12-15

    申请号:US17661293

    申请日:2022-04-29

    Abstract: A focus ring placement table includes an annular ceramic heater on which a focus ring is placed, a metal base, an adhesive element bonding the metal base and the ceramic heater, an inner-peripheral-side protective element disposed between the metal base and the ceramic heater and bonded to an inner peripheral portion of the adhesive element, and an outer-peripheral-side protective element disposed between the metal base and the ceramic heater and bonded to an outer peripheral portion of the adhesive element. A coefficient of thermal expansion of the adhesive element is equal to or smaller than a coefficient of thermal expansion of the inner-peripheral-side protective element and is equal to or greater than a coefficient of thermal expansion of the outer-peripheral-side protective element.

    ELECTROSTATIC CHUCK HEATER
    10.
    发明申请

    公开(公告)号:US20220037188A1

    公开(公告)日:2022-02-03

    申请号:US17451504

    申请日:2021-10-20

    Abstract: An electrostatic chuck heater includes an electrostatic chuck including an electrostatic electrode embedded in a ceramic sintered body, a cooling member cooling the electrostatic chuck, and a heater layer disposed between the electrostatic chuck and the cooling member and including a plurality of metal layers embedded therein in multiple stages, the metal layers including resistance heating element layers. The heater layer includes a ceramic insulating layer with a thickness of 2 μm or more and 50 μm or less between the metal layers.

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