公开(公告)号：US06665159B2

公开(公告)日：2003-12-16

申请号：US09785499

申请日：2001-02-20

申请人： Kumiko Takikawa ,  Satoshi Tanaka ,  Masumi Kasahara

发明人： Kumiko Takikawa ,  Satoshi Tanaka ,  Masumi Kasahara

IPC分类号： H02H900

CPC分类号： H01L27/0259 ,  H01L27/0255 ,  H03F1/52 ,  H03F2200/372

摘要： Into an internal circuit to operate in a high-frequency band, there is incorporated a protective circuit of a multistage connection which is constructed to include a plurality of diode-connected transistors having a low parasitic capacity and free from a malfunction even when an input signal higher than the power supply voltage is applied. Into an internal circuit to operate in a low-frequency band, there is incorporated a protective circuit which is constructed to include one diode-connected transistor. The protective circuits include two lines of protective circuit, in which the directions of electric currents are so reversed as to protect the internal circuits against positive/negative static electricities.

摘要翻译： 在内部电路中工作在高频带内，结合有多级连接的保护电路，其被构造为包括具有低寄生电容并且没有故障的多个二极管连接的晶体管，即使当输入信号 高于施加电源电压。 在内部电路中工作在低频带，其中包括一个保护电路，其构造为包括一个二极管连接的晶体管。 保护电路包括两条保护电路，其中电流方向相反，以保护内部电路免受正/负静电。

公开(公告)号：US06624509B2

公开(公告)日：2003-09-23

申请号：US09911796

申请日：2001-07-25

申请人： Kumiko Takikawa ,  Satoshi Tanaka ,  Satoshi Kayama ,  Yuichi Saito ,  Norio Hayashi

发明人： Kumiko Takikawa ,  Satoshi Tanaka ,  Satoshi Kayama ,  Yuichi Saito ,  Norio Hayashi

IPC分类号： H01L2348

CPC分类号： H04B1/006 ,  H01L23/50 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H04B1/005 ,  H04B1/28 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a differential low-noise amplifier built in a semiconductor integrated circuit for a dual-band wireless transceiver, impedance components of wire bonding and package that occur in emitters are reduced and a gain is improved. Ground pins of amplifiers of the differential amplifier forming a pair are arranged adjacent to each other. Input pins and ground pins of the same amplifier are arranged adjacent to each other. Signals of the adjacent pins are allowed to have inverse phases, and trans-coupling between the pins is utilized so as to reduce impedance of the transistor emitters.