公开(公告)号：US12074149B2

公开(公告)日：2024-08-27

申请号：US17168251

申请日：2021-02-05

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Michael E. Watts ,  James Krehbiel ,  Mario Bokatius

IPC分类号： H01L25/16 ,  H01L23/00 ,  H01L23/367 ,  H01L23/66

CPC分类号： H01L25/16 ,  H01L23/367 ,  H01L23/66 ,  H01L24/48 ,  H01L2223/6655 ,  H01L2224/48137 ,  H01L2224/48175 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/1421 ,  H01L2924/19105 ,  H01L2924/30111

摘要： A semiconductor device package includes a first and a second input lead and a plurality of uniform transistor-based components, the plurality of uniform transistor-based components comprising a first subset of the uniform transistor-based components coupled to the first input lead and a second subset of the uniform transistor-based components coupled to the second input lead. The first subset and the second subset are arranged in an asymmetric configuration with respect to one another.

公开(公告)号：US12057413B2

公开(公告)日：2024-08-06

申请号：US16393047

申请日：2019-04-24

申请人： Intel Corporation

发明人： Lijiang Wang ,  Jianyong Xie ,  Arghya Sain ,  Xiaohong Jiang ,  Sujit Sharan ,  Kemal Aygun

IPC分类号： H01L23/66 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L23/66 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/16 ,  H01L2223/6638 ,  H01L2224/16225 ,  H01L2924/30111

摘要： Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, the electronic package comprises a first trace embedded in a package substrate. In an embodiment, the first trace comprises a first region, where the first region has a first width, and a second region, where the second region has a second width that is smaller than the first width.

公开(公告)号：US20240079318A1

公开(公告)日：2024-03-07

申请号：US17903965

申请日：2022-09-06

申请人： Western Digital Technologies, Inc.

发明人： Md. Sayed Mobin ,  Nagesh Vodrahalli ,  Pranav Balachander ,  Narayanan Terizhandur V

IPC分类号： H01L23/522 ,  H01L23/00 ,  H01L23/528 ,  H01L25/065

CPC分类号： H01L23/5227 ,  H01L23/5222 ,  H01L23/5228 ,  H01L23/528 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/48095 ,  H01L2224/48105 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/1438 ,  H01L2924/30101 ,  H01L2924/30105 ,  H01L2924/30111

摘要： A storage device includes a substrate of a memory package and a first memory die. The substrate includes a controller and a first pin pad, the first pin pad being electrically connected to the controller and defining a data channel for data communications. The first memory die includes a front pin pad electrically connected to the first pin pad of the substrate by way of a first bond wire, a rear pin pad, a redistribution layer electrically connecting the front pin pad and the rear pin pad of the first memory die, and a plurality of memory cells configured to provide non-volatile storage accessible by way of the data channel.

公开(公告)号：US11706852B2

公开(公告)日：2023-07-18

申请号：US16686521

申请日：2019-11-18

申请人： Illinois Tool Works Inc.

发明人： Marco Carcano ,  Michele Sclocchi ,  Daniele Chirico

IPC分类号： H05B6/68 ,  H01L23/66 ,  H01L23/00 ,  H05B6/66 ,  H03F3/213

CPC分类号： H05B6/687 ,  H01L23/66 ,  H01L24/40 ,  H01L24/48 ,  H01L24/84 ,  H01L24/85 ,  H03F3/213 ,  H05B6/664 ,  H05B6/686 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2224/40091 ,  H01L2224/40101 ,  H01L2224/40195 ,  H01L2224/45014 ,  H01L2224/4801 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48153 ,  H01L2924/30111 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451

摘要： Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

公开(公告)号：US20180331427A1

公开(公告)日：2018-11-15

申请号：US16041382

申请日：2018-07-20

申请人： Fractus, S.A.

发明人： Jordi SOLER CASTANY ,  Jaume ANGUERA PROS ,  Carles PUENTE BALIARDA ,  Carmen BORJA BORAU

IPC分类号： H01Q9/04 ,  H01Q9/40 ,  H01Q9/42 ,  H01Q13/10 ,  H01L25/16 ,  H01Q1/22 ,  H01L23/66 ,  H01Q1/36 ,  H01Q1/38 ,  H01Q1/40 ,  H01Q9/26 ,  H01L23/00

CPC分类号： H01Q9/045 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/165 ,  H01L2223/6677 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48265 ,  H01L2224/48464 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/207 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01Q1/22 ,  H01Q1/2283 ,  H01Q1/36 ,  H01Q1/38 ,  H01Q1/40 ,  H01Q9/26 ,  H01Q9/30 ,  H01Q9/40 ,  H01Q9/42 ,  H01Q13/10

摘要： The present invention relates to an integrated circuit package comprising at least one substrate, each substrate including at least one layer, at least one semiconductor die, at least one terminal, and an antenna located in the integrated circuit package, but not on said at least one semiconductor die. The conducting pattern comprises a curve having at least five sections or segments, at least three of the sections or segments being shorter than one-tenth of the longest free-space operating wavelength of the antenna, each of the five sections or segments forming a pair of angles with each adjacent segment or section, wherein the smaller angle of each of the four pairs of angles between sections or segments is less than 180° (i.e., no pair of sections or segments define a longer straight segment), wherein at least two of the angles are less than 115°, wherein at least two of the angles are not equal, and wherein the curve fits inside a rectangular area the longest edge of which is shorter than one-fifth of the longest free-space operating wavelength of the antenna.

公开(公告)号：US20180025998A1

公开(公告)日：2018-01-25

申请号：US15719634

申请日：2017-09-29

申请人： Renesas Electronics Corporation

发明人： Shuuichi KARIYAZAKI

IPC分类号： H01L23/64 ,  H01L23/50 ,  H01L23/538 ,  H01L23/66 ,  H01L23/522 ,  H01L23/498 ,  H05K1/02 ,  H05K1/18

CPC分类号： H01L23/642 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/5222 ,  H01L23/5383 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2223/6661 ,  H01L2224/16227 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/30111 ,  H05K1/0231 ,  H05K1/181 ,  H05K2201/10378

摘要： A semiconductor device with enhanced performance. The semiconductor device has a high speed transmission path which includes a first coupling part to couple a semiconductor chip and an interposer electrically, a second coupling part to couple the interposer and a wiring substrate, and an external terminal formed on the bottom surface of the wiring substrate. The high speed transmission path includes a first transmission part located in the interposer to couple the first and second coupling parts electrically and a second transmission part located in the wiring substrate to couple the second coupling part and the external terminal electrically. The high speed transmission path is coupled with a correction circuit in which one edge is coupled with a branching part located midway in the second transmission part and the other edge is coupled with a capacitative element, and the capacitative element is formed in the interposer.

公开(公告)号：US09799599B2

公开(公告)日：2017-10-24

申请号：US14110426

申请日：2012-04-04

申请人： Richard John Lang ,  Richard Paul Hilton ,  Jonathan David Stanley Gill

发明人： Richard John Lang ,  Richard Paul Hilton ,  Jonathan David Stanley Gill

IPC分类号： H01L27/00 ,  H01L23/522 ,  H01L23/64 ,  H01L23/66 ,  H03F1/56 ,  H03F3/60 ,  H01L27/06

CPC分类号： H01L23/5223 ,  H01L23/5227 ,  H01L23/642 ,  H01L23/66 ,  H01L27/0629 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6655 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/1423 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H03F1/56 ,  H03F3/60 ,  H03F2200/222 ,  H03F2200/387 ,  H01L2924/00014 ,  H01L2924/00

摘要： There are disclosed impedance matching networks and technique for impedance matching to microwave power transistors. Distributed capacitor inductor networks are used so as to provide a high degree of control and accuracy, especially in terms of inductance values, in comparison to existing lumped capacitor arrangements. The use of bond wires is reduced, with inductance being provided primarily by microstrip transmission lines on the capacitors.

公开(公告)号：US09748185B2

公开(公告)日：2017-08-29

申请号：US15050176

申请日：2016-02-22

申请人： Freescale Semiconductor, Inc.

发明人： Lakshminarayan Viswanathan ,  Jeffrey K. Jones ,  Scott D. Marshall

IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L31/119 ,  H01L23/66 ,  H01L23/047 ,  H01L23/00 ,  H01L23/495

CPC分类号： H01L23/66 ,  H01L23/047 ,  H01L23/49589 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49052 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

摘要： Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.

公开(公告)号：US09741673B2

公开(公告)日：2017-08-22

申请号：US13537933

申请日：2012-06-29

申请人： Ulf Hakan Andre ,  Simon Maurice Wood

发明人： Ulf Hakan Andre ,  Simon Maurice Wood

IPC分类号： H01L23/66 ,  H01L23/64 ,  H01G5/18 ,  H01G5/38 ,  H01L23/00

CPC分类号： H01L23/66 ,  H01G5/18 ,  H01G5/38 ,  H01L23/642 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2224/45099 ,  H01L2924/00

摘要： A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells, an RF input lead coupled to the plurality of RF transistor cells, an RF output lead, and an output matching network coupled between the plurality of RF transistor cells and the RF output lead. The output matching network includes a plurality of capacitors having respective upper capacitor plates, wherein the upper capacitor plates of the capacitors are coupled to output terminals of respective ones of the RF transistor cells. The plurality of capacitors may be provided as a capacitor block that includes a common reference capacitor plate and a dielectric layer on the reference capacitor plate. The upper capacitor plates may be on the dielectric layer.

公开(公告)号：US09692357B2

公开(公告)日：2017-06-27

申请号：US14686666

申请日：2015-04-14

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Dinhphuoc Vu Hoang ,  Hardik Bhupendra Modi ,  Hsiang-Chih Sun ,  Peter J. Zampardi, Jr. ,  Guohao Zhang

IPC分类号： H03F3/195 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  H03F3/24 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H03F3/213 ,  H03F3/187 ,  H03F3/347 ,  H01L29/8605 ,  H01L21/8252 ,  H01L27/092 ,  H03F3/45

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.