公开(公告)号：US20200052693A1

公开(公告)日：2020-02-13

申请号：US16166177

申请日：2018-10-22

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Ming-Shiuan Wen

IPC: H03K17/693 ,  H03K17/00 ,  H04B1/48

Abstract: A radio frequency (RF) device and its voltage generating circuit are provided. The RF device includes the voltage generating circuit and a RF circuit. The voltage generating circuit receives a RF signal and generates at least one bias voltage related to the RF signal. The RF circuit is used to receive the RF signal. The RF circuit is coupled to the voltage generating circuit to receive the bias voltage. The bias voltage is used to operate the conduction state of at least one RF transmission path of the RF circuit.

公开(公告)号：US20200028357A1

公开(公告)日：2020-01-23

申请号：US16515015

申请日：2019-07-17

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Tsung-Han Lee ,  Chuan-Chen Chao

IPC: H02H9/04 ,  H03K17/693 ,  H05K1/02 ,  H02M7/48

Abstract: A signal switching apparatus includes a signal control switch, a switch circuit, a blocking capacitor and a surge current dissipating circuit. The signal control switch coupled between a first signal transceiving end and a second signal transceiving end is turned on or turned off according to a first control signal. The switch circuit having at least one first transistor is controlled by a second control signal to be turned on or off, and a first end of the switch circuit is coupled to the first signal transceiving end. The blocking capacitor is coupled between a second end of the switch circuit and a reference voltage terminal. The surge current dissipating circuit having at least one second transistor is coupled between the second end of the switch circuit and the reference voltage terminal. The second transistor is configured to dissipate a surge current and also turned off when operated normally.

公开(公告)号：US10516370B2

公开(公告)日：2019-12-24

申请号：US16452549

申请日：2019-06-26

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Pei-Chuan Hsieh

IPC: H03F1/32 ,  H03F3/19 ,  H03F1/02 ,  H03F3/21

Abstract: A predistorter has a first capacitor, a first bias input circuit, a second bias input circuit, a second capacitor and an impedance conversion circuit. A first end of the first capacitor is coupled to a first node of the amplifier. The impedance conversion circuit has a first resistor and a field-effect transistor (FET) and is used to perform an impedance conversion to provide a variable capacitance. A gate of the FET is coupled to an output end of the first bias input circuit, one of a source and a drain of the FET is coupled to a second end of the first capacitor and a first end of the first resistor, and another of the source and the drain of the FET is coupled to an output end of the second bias input circuit, first end of the second capacitor and a second end of the first resistor.

公开(公告)号：US10454479B2

公开(公告)日：2019-10-22

申请号：US16111238

申请日：2018-08-24

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Tien-Yun Peng

IPC: H03K19/003 ,  H03K19/00 ,  H03K19/017 ,  H03K19/20

Abstract: An inverter includes a first system voltage terminal, a second system voltage terminal, an output terminal, a plurality of P-type transistors, a plurality of N-type transistors, and a voltage drop impedance element. The first system voltage terminal receives a first voltage, and the second system voltage terminal receives a second voltage. The plurality of P-type transistors are coupled in series between the first system voltage terminal and the output terminal. The plurality of N-type transistors are coupled in series between the output terminal and the second system voltage terminal. The voltage drop impedance element is coupled in parallel with a first N-type transistor of the plurality of N-type transistors, and the impedance of the voltage drop impedance element is smaller than the impedance of the first N-type transistor when the first N-type transistor is turned off.

公开(公告)号：US10411657B2

公开(公告)日：2019-09-10

申请号：US16264701

申请日：2019-02-01

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Chang-Yi Chen

IPC: H01F5/00 ,  H03F1/56 ,  H03F3/195 ,  H03F3/21 ,  H03F3/45 ,  H01F27/28 ,  H01F19/08

Abstract: A transformer has a first winding, a second winding, a third winding, a fourth winding and a fifth winding. The fifth winding has a first part and a second part serially connected to the first part. The first part is magnetically coupled to the second winding and magnetically isolated from the first winding, and the second part is magnetically coupled to the fourth winding and magnetically isolated from the third winding. The second winding is positioned between the first winding and the first part, the first winding is positioned adjacent to the second winding, and the second winding is positioned adjacent to the first part. The fourth winding is positioned between the third winding and the second part, the third winding is positioned adjacent to the fourth winding, and the fourth winding is positioned adjacent to the second part.

公开(公告)号：US10381987B2

公开(公告)日：2019-08-13

申请号：US15805125

申请日：2017-11-06

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Pei-Chuan Hsieh

IPC: H03F1/32 ,  H03F3/21 ,  H03F1/02 ,  H03F3/19

Abstract: A predistorter has a first capacitor and an impedance conversion circuit. A first end of the first capacitor is coupled to a first node of the amplifier. The impedance conversion circuit is used to perform an impedance conversion to provide a variable capacitance. The impedance conversion circuit has a first bias input circuit and a bipolar junction transistor (BJT). The first bias input circuit is used to receive a first input bias. A base of the BJT is coupled to an output end of the first bias input circuit and a second end of the first capacitor, a collector of the BJT is floating, and an emitter of the BJT is coupled to a second node of the amplifier.

公开(公告)号：US10340704B2

公开(公告)日：2019-07-02

申请号：US15404215

申请日：2017-01-12

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Ching-Wen Hsu

IPC: H03K17/16 ,  H04B1/44 ,  H01P1/15 ,  H02J4/00 ,  H03K17/693

Abstract: A switch device includes a common terminal and a selection circuit. The selection circuit includes a primary switch, a first secondary switch, and a second secondary switch. The primary switch includes a plurality of primary transistors coupled in series and is coupled to the common terminal. The first secondary switch is coupled to the primary switch and a first transmission terminal. The first secondary switch includes a plurality of first secondary transistors coupled in series. The second secondary switch is coupled to the primary switch and a second transmission terminal. The second secondary switch includes a plurality of second secondary transistors coupled in series. The number of the first secondary transistors and the number of the second secondary transistors are both greater than or equal to the number of the primary transistors.

公开(公告)号：US10103051B2

公开(公告)日：2018-10-16

申请号：US15603480

申请日：2017-05-24

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Jhao-Yi Lin

IPC: H01L21/76 ,  H01L21/762 ,  H01L29/06 ,  H01L21/765 ,  H01L27/082 ,  H01L27/092 ,  H01L29/735

Abstract: A semiconductor structure includes a first well, a semiconductor element, a second well and a first isolation layer. The semiconductor element is formed on or contacts the first well. The first well is formed on the second well. The first isolation layer is used to reduce a parasitic effect between the first well and the second well. The bottom of the first isolation layer is at least as deep as the bottom of the first well. The first isolation layer substantially forms a first ring structure around the first well. The doping type of the second well is different from the doping type of the first well.

公开(公告)号：US20180076194A1

公开(公告)日：2018-03-15

申请号：US15638351

申请日：2017-06-29

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Tsung-Han Lee ,  Chang-Yi Chen

IPC: H01L27/06

CPC classification number: H01L27/0629 ,  H01L29/7833

Abstract: A transistor includes a first doping well, a second doping well, a first doping area, a second doping area, a gate layer, and at least one compensation capacitor. The first doping well and the second doping well are formed in a structure layer. The first doping area and the second doping area are formed in the first doping well and have a first conductivity type, the second doping well has a second conductivity type, and the first doping area is used for transmitting the signal. The at least one compensation capacitor is used for adjusting a voltage drop of a parasitic junction capacitor between the first doping area and the first doping well, a voltage drop of a parasitic junction capacitor between the first doping well and the second doping well, or a voltage drop of a parasitic junction capacitor between the second doping well and the structure layer.

公开(公告)号：US20180025935A1

公开(公告)日：2018-01-25

申请号：US15603480

申请日：2017-05-24

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Jhao-Yi Lin

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76224 ,  H01L21/765 ,  H01L27/082 ,  H01L27/0928 ,  H01L29/0619 ,  H01L29/735

Abstract: A semiconductor structure includes a first well, a semiconductor element, a second well and a first isolation layer. The semiconductor element is formed on or contacts the first well. The first well is formed on the second well. The first isolation layer is used to reduce a parasitic effect between the first well and the second well. The bottom of the first isolation layer is at least as deep as the bottom of the first well. The first isolation layer substantially forms a first ring structure around the first well. The doping type of the second well is different from the doping type of the first well.