公开(公告)号：US20220399452A1

公开(公告)日：2022-12-15

申请号：US17651623

申请日：2022-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beomjin Park ,  Myung Gil Kang ,  Dongwon Kim ,  Keun Hwi Cho

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/06

Abstract: A semiconductor device may include a first active pattern on a substrate, a pair of first source/drain patterns on the first active pattern and a first channel pattern between the first source/drain patterns, the first channel pattern including first semiconductor patterns, which are spaced apart from each other in a stacked formation, a gate electrode on the first channel pattern, a first gate cutting pattern adjacent to the first channel pattern that penetrates the gate electrode, and a first spacer pattern between the first gate cutting pattern and the first channel pattern. The first spacer pattern may include a first remaining pattern adjacent to an outermost side surface of at least one of the first semiconductor patterns and a second remaining pattern on the first remaining pattern. The second remaining pattern may be spaced apart from the first gate cutting pattern.

公开(公告)号：US10714476B2

公开(公告)日：2020-07-14

申请号：US15804307

申请日：2017-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin Kim ,  Dongwon Kim

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes: channel patterns disposed on a substrate; a pair of source/drain patterns disposed at first and second sides of each of the channel patterns; and a gate electrode disposed around the channel patterns, wherein the gate electrode includes a first recessed top surface between adjacent channel patterns, wherein the channel patterns are spaced apart from the substrate, and wherein the gate electrode is disposed between the substrate and the channel patterns.

公开(公告)号：US09520458B2

公开(公告)日：2016-12-13

申请号：US14718685

申请日：2015-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung Gil Kang ,  Dongwon Kim ,  Ilryong Kim ,  Changwoo Oh ,  Keun Hwi Cho ,  Toshinori Fukai

IPC: H01L27/11 ,  H01L49/02 ,  H01L27/06

CPC classification number: H01L28/20 ,  H01L27/0629

Abstract: Embodiments of the inventive concepts provide a resistor and a semiconductor device including the same. The resistor includes a substrate, a device isolation layer in the substrate which defines active regions arranged in a first direction a resistance layer including resistance patterns that vertically protrude from the active regions and are connected to each other in the first direction, and contact electrodes on the resistance layer.

Abstract translation: 本发明构思的实施例提供一种电阻器和包括该电阻器的半导体器件。 电阻器包括衬底，衬底中的器件隔离层，其限定在第一方向上布置的有源区，包括从有源区垂直突出并在第一方向上彼此连接的电阻图案的电阻层，以及接触电极 电阻层。