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公开(公告)号：US11935924B2
公开(公告)日：2024-03-19
申请号：US17371582
申请日：2021-07-09
发明人： Noh Yeong Park , Dong Il Bae , Beomjin Park
IPC分类号： H01L29/10 , H01L21/8238 , H01L27/092 , H01L29/08 , H01L29/16 , H01L29/417 , H01L29/423
CPC分类号： H01L29/1033 , H01L21/823807 , H01L21/823814 , H01L21/823871 , H01L27/092 , H01L29/0847 , H01L29/16 , H01L29/41775 , H01L29/42364 , H01L29/42372
摘要： Disclosed are semiconductor devices and/or method of fabricating the same. The semiconductor device comprises a substrate including first and second regions, a first active pattern on the first region and including a pair of first source/drain patterns and a first channel pattern including first semiconductor patterns, a second active pattern on the second region and including a pair of second source/drain patterns and a second channel pattern including second semiconductor patterns, a support pattern between two vertically adjacent first semiconductor patterns, and a first gate electrode and a second gate electrode on the first channel pattern and the second channel pattern. A channel length of the first channel pattern is greater than that of the second channel pattern. A ratio of a width of the support pattern to the channel length of the first channel pattern is in a range of 0.05 to 0.2.
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公开(公告)号：US20240038873A1
公开(公告)日：2024-02-01
申请号：US18483413
申请日：2023-10-09
发明人： Bongseok Suh , Daewon Kim , Beomjin Park , Sukhyung Park , Sungil Park , Jaehoon Shin , Bongseob Yang , Junggun You , Jaeyun Lee
IPC分类号： H01L29/66 , H01L29/10 , H01L29/423 , H01L29/786
CPC分类号： H01L29/6656 , H01L29/1033 , H01L29/42376 , H01L29/78696 , H01L29/66553 , H01L29/7727
摘要： A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.
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公开(公告)号：US20240321961A1
公开(公告)日：2024-09-26
申请号：US18613338
申请日：2024-03-22
发明人： Jongsu Kim , Myunggil Kang , Dongwon Kim , Beomjin Park , Inhyun Song , Hyumin Yoo , Yujin Jeon
IPC分类号： H01L29/06 , H01L27/092 , H01L29/08 , H01L29/423 , H01L29/775 , H01L29/786
CPC分类号： H01L29/0673 , H01L27/092 , H01L29/0847 , H01L29/42392 , H01L29/775 , H01L29/78696
摘要： An integrated circuit device includes, a first nano-sheet stack including a plurality of nano-sheets arranged on a fin-type active region extending in a first horizontal direction, a gate line extending in a second horizontal direction on the fin-type active region, a vertical structure contacting the plurality of nano-sheets, and a first gate dielectric layer disposed between the gate line and the plurality of nano-sheets and between the gate line and the vertical structure, wherein the gate line includes a first sub-gate portion disposed under each of the plurality of nano-sheets, the first gate dielectric layer includes a first portion disposed between the gate line and the plurality of nano-sheets, and a second portion disposed between the first sub-gate portion and the vertical structure, and a thickness of the second portion in the second horizontal direction is greater than a thickness of the first portion in the vertical direction.
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公开(公告)号：US20220399452A1
公开(公告)日：2022-12-15
申请号：US17651623
申请日：2022-02-18
发明人： Beomjin Park , Myung Gil Kang , Dongwon Kim , Keun Hwi Cho
IPC分类号： H01L29/423 , H01L29/786 , H01L29/06
摘要： A semiconductor device may include a first active pattern on a substrate, a pair of first source/drain patterns on the first active pattern and a first channel pattern between the first source/drain patterns, the first channel pattern including first semiconductor patterns, which are spaced apart from each other in a stacked formation, a gate electrode on the first channel pattern, a first gate cutting pattern adjacent to the first channel pattern that penetrates the gate electrode, and a first spacer pattern between the first gate cutting pattern and the first channel pattern. The first spacer pattern may include a first remaining pattern adjacent to an outermost side surface of at least one of the first semiconductor patterns and a second remaining pattern on the first remaining pattern. The second remaining pattern may be spaced apart from the first gate cutting pattern.
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公开(公告)号：US12132046B2
公开(公告)日：2024-10-29
申请号：US17466043
申请日：2021-09-03
发明人： Ho-Jun Kim , Beomjin Park , Dong Il Bae , Mirco Cantoro
IPC分类号： H01L27/088 , H01L29/417 , H01L29/423
CPC分类号： H01L27/088 , H01L29/41775 , H01L29/42372
摘要： Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a plurality of gate structures that are spaced apart from each other in a first direction on a substrate and extend in a second direction intersecting the first direction, and a plurality of separation patterns penetrating immediately neighboring ones of the plurality of gate structures, respectively. Each of the plurality of separation patterns separates a corresponding one of the neighboring gate structures into a pair of gate structures that are spaced apart from each other in the second direction. The plurality of separation patterns are spaced apart from and aligned with each other along the first direction.
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公开(公告)号：US20240072149A1
公开(公告)日：2024-02-29
申请号：US18195749
申请日：2023-05-10
发明人： Younggwon KIM , Myunggil Kang , Dongwon Kim , Beomjin Park , Inu Jeon , Soojin Jeong
IPC分类号： H01L29/423 , H01L29/06 , H01L29/417 , H01L29/66 , H01L29/775 , H01L29/786
CPC分类号： H01L29/42392 , H01L29/0673 , H01L29/41775 , H01L29/66545 , H01L29/775 , H01L29/78696
摘要： A semiconductor device includes a substrate including an active region extending in a first direction, a gate electrode layer crossing the active region and extending in a second direction, a plurality of channel layers on the active region, spaced apart from each other in a third direction, perpendicular to an upper surface of the substrate, and disposed sequentially from the active region, and surrounded by the gate electrode layer, gate spacer layers disposed on side surfaces of the gate electrode layer in the first direction, and source/drain regions disposed on the active region, on sides of the gate electrode layer, and connected to the plurality of channel layers. An uppermost channel layer among the plurality of channel layers includes channel portions separated from each other in the first direction and disposed below the gate spacer layers.
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公开(公告)号：US12132101B2
公开(公告)日：2024-10-29
申请号：US17568170
申请日：2022-01-04
发明人： Beomjin Park , Dongwon Kim , Bongseok Suh , Daewon Kim
IPC分类号： H01L29/66 , H01L29/10 , H01L29/417 , H01L29/78
CPC分类号： H01L29/6681 , H01L29/1033 , H01L29/41791 , H01L29/7851
摘要： A semiconductor device includes a first and second active regions extending in a first direction and having respective first and second widths in a second direction, the second width greater than the first width, a connection region connected to the first and second active regions and having a third width, between the first and second widths in the second direction, first and second gate structures respectively intersecting the first and second active regions and extending in the second direction, and a dummy structure intersecting at least a portion of the connection region, extending in the second direction, and between the first and second gate structures in the first direction. The dummy structure includes first and second pattern portions spaced apart from a side surface of the first gate structure by respective first and second distances in the first direction, the second distance greater than the first distance.
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公开(公告)号：US20240096955A1
公开(公告)日：2024-03-21
申请号：US18367852
申请日：2023-09-13
发明人： Myunggil KANG , Beomjin Park , Dongwon Kim
IPC分类号： H01L29/06 , H01L27/092 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/786
CPC分类号： H01L29/0673 , H01L27/092 , H01L29/42392 , H01L29/66545 , H01L29/775 , H01L29/78696
摘要： In some embodiments, an integrated circuit device includes a substrate, a fin-type active region on the substrate that extends in a first direction, a plurality of semiconductor patterns spaced apart from an upper surface of the fin-type active region and include a channel region, a gate electrode, and a gate cut insulating pattern. The gate electrode extends in a second direction on the fin-type active region and is disposed between the plurality of semiconductor patterns. The gate electrode includes a first sidewall extending in the second direction and a second sidewall extending in the first direction. The gate cut insulating pattern is on a second sidewall of the gate electrode. An upper portion of the gate cut insulating pattern is wider in the second direction than a lower portion of the gate cut insulating pattern. A portion of a sidewall of the gate cut insulating pattern is curved.
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公开(公告)号：US11699703B2
公开(公告)日：2023-07-11
申请号：US17451688
申请日：2021-10-21
发明人： Beomjin Park , Dongil Bae , Daewon Kim , Taeyoung Kim , Joohee Jung , Jaehoon Shin
IPC分类号： H01L27/088 , H01L29/78 , H01L29/786 , H01L29/423
CPC分类号： H01L27/0886 , H01L29/42392 , H01L29/785 , H01L29/78696
摘要： A semiconductor device includes an active pattern extending on a substrate in a first direction, divided into a plurality of regions by a separation region, and having a first edge portion exposed toward the separation region; first, second and third channel layers vertically separated and sequentially disposed on the active pattern; a first gate electrode extending in a second direction, intersecting the active pattern, and surrounding the first, second and third channel layers; source/drain regions disposed on the active pattern, on at least one side of the first gate electrode, and contacting the first, second and third channel layers; a semiconductor structure including first semiconductor layers and second semiconductor layers alternately stacked on the active pattern, and having a second edge portion exposed toward the separation region; and a blocking layer covering at least one of an upper surface, side surfaces, or the second edge portion, of the semiconductor structure.
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公开(公告)号：US20230139574A1
公开(公告)日：2023-05-04
申请号：US17851289
申请日：2022-06-28
发明人： JUNGGUN YOU , Beomjin Park , Sughyun Sung , Hojin Lee , Dongwon Kim , Donggyu Lee , Myoung-Sun Lee , Keun Hwi Cho , Hanbyul Choi , Jiyong Ha
IPC分类号： H01L29/423 , H01L29/786 , H01L29/66
摘要： A semiconductor device includes: an active pattern on a substrate, wherein the active pattern includes a plurality of channel layers stacked on one another; a plurality of source/drain patterns spaced apart from each other in a first direction and disposed on the active pattern, wherein the plurality of source/drain patterns are connected to each other through the plurality of channel layers; and first and second gate electrodes at least partially surrounding the channel layers and extending in a second direction, wherein the second direction intersects the first direction, wherein the active pattern has a first sidewall and a second sidewall that faces the first sidewall, and wherein a first distance between the first sidewall of the active pattern and an outer sidewall of the first gate electrode is different from a second distance between the second sidewall of the active pattern and an outer sidewall of the second gate electrode.
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