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公开(公告)号：US20230387237A1
公开(公告)日：2023-11-30
申请号：US18449734
申请日：2023-08-15
发明人： MYUNG GIL KANG , Dong Won Kim , Woo Seok Park , Keun Hwi Cho , Sung Gi Hur
IPC分类号： H01L29/423 , H01L27/092 , H01L29/06 , H01L29/786
CPC分类号： H01L29/42392 , H01L27/092 , H01L29/0665 , H01L29/78696 , H01L29/4236
摘要： Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.
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公开(公告)号：US11799013B2
公开(公告)日：2023-10-24
申请号：US17838573
申请日：2022-06-13
发明人： Guk Il An , Keun Hwi Cho , Dae Won Ha , Seung Seok Ha
IPC分类号： H01L29/51 , H01L23/522 , H01L27/088 , H01L29/78 , H01L49/02
CPC分类号： H01L29/516 , H01L23/5226 , H01L27/0886 , H01L28/40 , H01L29/785
摘要： A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer. And the ferroelectric material layer forms a ferroelectric capacitor having a negative capacitance in the first conductive connection group.
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公开(公告)号：US20230051602A1
公开(公告)日：2023-02-16
申请号：US17725180
申请日：2022-04-20
发明人： Beomjin PARK , Hyojin Kim , Myung Gil Kang , Jinbum Kim , Sangmoon Lee , Dongwon Kim , Keun Hwi Cho
IPC分类号： H01L29/423 , H01L29/786 , H01L29/66
摘要： A semiconductor device is provided. The semiconductor device includes: an active pattern provided on a substrate and extending in a first direction; a pair of source/drain patterns provided on the active pattern and spaced apart from each other in the first direction; a plurality of channel layers vertically stacked and spaced apart from each other on the active pattern between the pair of source/drain patterns; a gate electrode extending in a second direction between the pair of source/drain patterns, the gate electrode being provided on the active pattern and surrounding the plurality of channel layers, and the second direction intersecting the first direction; and a gate spacer provided between the plurality of channel layers, and between the gate electrode and the pair of source/drain patterns. The gate spacer includes a plurality of first spacer patterns and a plurality of second spacer patterns that are alternately stacked on sidewalls of the pair of source/drain patterns.
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公开(公告)号：US20220399452A1
公开(公告)日：2022-12-15
申请号：US17651623
申请日：2022-02-18
发明人： Beomjin Park , Myung Gil Kang , Dongwon Kim , Keun Hwi Cho
IPC分类号： H01L29/423 , H01L29/786 , H01L29/06
摘要： A semiconductor device may include a first active pattern on a substrate, a pair of first source/drain patterns on the first active pattern and a first channel pattern between the first source/drain patterns, the first channel pattern including first semiconductor patterns, which are spaced apart from each other in a stacked formation, a gate electrode on the first channel pattern, a first gate cutting pattern adjacent to the first channel pattern that penetrates the gate electrode, and a first spacer pattern between the first gate cutting pattern and the first channel pattern. The first spacer pattern may include a first remaining pattern adjacent to an outermost side surface of at least one of the first semiconductor patterns and a second remaining pattern on the first remaining pattern. The second remaining pattern may be spaced apart from the first gate cutting pattern.
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公开(公告)号：US11482522B2
公开(公告)日：2022-10-25
申请号：US16583322
申请日：2019-09-26
发明人： Mun Hyeon Kim , Byung Gook Park , Keun Hwi Cho , Si Hyun Kim , Ki Tae Lee
IPC分类号： H01L27/088 , H01L29/10 , H01L29/08 , H01L29/06 , H01L29/78 , H01L29/423 , H01L29/66 , H01L21/8234 , H01L21/306
摘要： Semiconductor devices are provided. A semiconductor device includes a gate structure extending in a first direction. The semiconductor device includes an active pattern intersecting the gate structure and having a width in the first direction and a height in a second direction. The width is smaller than the height. Moreover, the semiconductor device includes a source/drain region electrically connected to the active pattern.
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公开(公告)号：US11362182B2
公开(公告)日：2022-06-14
申请号：US17088011
申请日：2020-11-03
发明人： Ilgyou Shin , Minyi Kim , Myung Gil Kang , Jinbum Kim , Seung Hun Lee , Keun Hwi Cho
IPC分类号： H01L29/15 , H01L29/78 , H01L29/417 , H01L29/10
摘要： A semiconductor device includes; a substrate including a first region and a second region, a first active pattern extending upward from the first region, a first superlattice pattern on the first active pattern, a first active fin centrally disposed on the first active pattern, a first gate electrode disposed on the first active fin, and first source/drain patterns disposed on opposing sides of the first active fin and on the first active pattern. The first superlattice pattern includes at least one first semiconductor layer and at least one first blocker-containing layer, and the first blocker-containing layer includes at least one of oxygen, carbon, fluorine and nitrogen.
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7.发明授权Resistor formed using resistance patterns and semiconductor devices including the same 有权使用电阻图案形成的电阻和包括其的半导体器件公开(公告)号：US09520458B2
公开(公告)日：2016-12-13
申请号：US14718685
申请日：2015-05-21
发明人： Myung Gil Kang , Dongwon Kim , Ilryong Kim , Changwoo Oh , Keun Hwi Cho , Toshinori Fukai
CPC分类号： H01L28/20 , H01L27/0629
摘要： Embodiments of the inventive concepts provide a resistor and a semiconductor device including the same. The resistor includes a substrate, a device isolation layer in the substrate which defines active regions arranged in a first direction a resistance layer including resistance patterns that vertically protrude from the active regions and are connected to each other in the first direction, and contact electrodes on the resistance layer.
摘要翻译： 本发明构思的实施例提供一种电阻器和包括该电阻器的半导体器件。 电阻器包括衬底，衬底中的器件隔离层，其限定在第一方向上布置的有源区，包括从有源区垂直突出并在第一方向上彼此连接的电阻图案的电阻层，以及接触电极 电阻层。
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公开(公告)号：US12063767B2
公开(公告)日：2024-08-13
申请号：US17541790
申请日：2021-12-03
发明人： Myung Gil Kang , Seunghun Lee , Sangdeok Kwon , Keun Hwi Cho , Sung Gi Hur
IPC分类号： H01L27/11 , H01L29/36 , H01L29/423 , H01L29/786 , H10B10/00
CPC分类号： H10B10/12 , H01L29/42392 , H01L29/78618 , H01L29/78696
摘要： A semiconductor device includes a first active pattern on a substrate, a pair of first source/drain patterns on the first active pattern and a first channel pattern between the pair of first source/drain patterns, wherein the first channel pattern includes a plurality of semiconductor patterns that are stacked and spaced apart from each other, a first gate electrode on the first channel pattern, a first gate cutting pattern that is adjacent to the first channel pattern and penetrates the first gate electrode, and a first residual pattern between the first gate cutting pattern and the first channel pattern. The first residual pattern covers an outermost sidewall of at least one semiconductor pattern of the plurality of semiconductor patterns of the first channel pattern. The first gate electrode includes, on an upper portion of the first gate electrode, a first extension that vertically overlaps the first residual pattern.
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公开(公告)号：US20230411458A1
公开(公告)日：2023-12-21
申请号：US18239660
申请日：2023-08-29
发明人： Ilgyou Shin , Minyi Kim , Myung Gil Kang , Jinbum Kim , Seung Hun Lee , Keun Hwi Cho
IPC分类号： H01L29/15 , H01L29/78 , H01L29/417 , H01L29/10
CPC分类号： H01L29/158 , H01L29/1033 , H01L29/41791 , H01L29/785
摘要： A semiconductor device includes; a substrate including a first region and a second region, a first active pattern extending upward from the first region, a first superlattice pattern on the first active pattern, a first active fin centrally disposed on the first active pattern, a first gate electrode disposed on the first active fin, and first source/drain patterns disposed on opposing sides of the first active fin and on the first active pattern. The first superlattice pattern includes at least one first semiconductor layer and at least one first blocker-containing layer, and the first blocker-containing layer includes at least one of oxygen, carbon, fluorine and nitrogen.
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公开(公告)号：US11769813B2
公开(公告)日：2023-09-26
申请号：US18046518
申请日：2022-10-14
发明人： Myung Gil Kang , Dong Won Kim , Woo Seok Park , Keun Hwi Cho , Sung Gi Hur
IPC分类号： H01L29/423 , H01L27/092 , H01L29/06 , H01L29/786
CPC分类号： H01L29/42392 , H01L27/092 , H01L29/0665 , H01L29/4236 , H01L29/78696
摘要： Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction different from the first direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.
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