公开(公告)号：US20160155923A1

公开(公告)日：2016-06-02

申请号：US14851536

申请日：2015-09-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Emmanuel Dubois ,  Jean-Francois Robillard ,  Stephane Monfray ,  Thomas Skotnicki

IPC: H01L35/32

CPC classification number: H01L35/32 ,  H01L27/16

Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.

Abstract translation: 热电发生器包括具有包含至少一个P-N结的声子结构的半导体膜。 膜被悬挂在设计成耦合到冷热源的第一支撑件和设计成耦合到热热源的第二支撑件之间。 用于悬浮膜的结构具有允许热通量在膜的平面内重新分布的结构。

公开(公告)号：US20160071772A1

公开(公告)日：2016-03-10

申请号：US14940325

申请日：2015-11-13

Applicant: STMicroelectronics, Inc. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray ,  Ronald K. Sampson ,  Nicolas Loubet

IPC: H01L21/8234 ,  H01L29/165 ,  H01L29/10 ,  H01L29/78 ,  H01L21/84 ,  H01L21/02

CPC classification number: H01L21/823431 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/823418 ,  H01L21/823468 ,  H01L21/823481 ,  H01L21/845 ,  H01L29/0673 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: Elongated fins of a first semiconductor material are insulated from and formed over an underlying substrate layer (of either SOI or bulk type). Elongated gates of a second semiconductor material are then formed to cross over the elongated fins at channel regions, and the gate side walls are covered by sidewall spacers. A protective material is provided to cover the underlying substrate layer and define sidewall spacers on side walls of the elongated fins between the elongated gates. The first semiconductor material and insulating material of the elongated fins located between the protective material sidewall spacers (but not under the elongated gates) is removed to form trenches aligned with the channel regions. Additional semiconductor material is then epitaxially grown inside each trench between the elongated gates to form source-drain regions adjacent the channel regions formed by the elongated fins of the first semiconductor material located under the elongated gates.

公开(公告)号：US20150300328A1

公开(公告)日：2015-10-22

申请号：US14686299

申请日：2015-04-14

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Onoriu Puscasu ,  Stephane Monfray ,  Thomas Skotnicki ,  Christophe Maitre

IPC: F03G7/06 ,  H02N1/08

CPC classification number: F03G7/06 ,  H02N1/08 ,  H02N10/00

Abstract: An electrical generator is composed of a bi-layer membrane enabling the conversion of a thermal energy into electrical energy. The bi-layer membrane is deformable and includes at least two layers having different thermal expansion coefficients. The membrane moves between positions in a reversible fashion in response to heat dissipation and as a function of two flexing temperatures. A magnetic structure associated with the membrane functions to set the flexing temperatures as a function of ambient temperature.

Abstract translation: 发电机由能够将热能转换成电能的双层膜组成。 双层膜是可变形的并且包括具有不同热膨胀系数的至少两层。 膜以可逆的方式响应于散热并作为两个弯曲温度的函数在位置之间移动。 与膜相关的磁性结构用于将弯曲温度设定为环境温度的函数。

公开(公告)号：US20150162433A1

公开(公告)日：2015-06-11

申请号：US14097565

申请日：2013-12-05

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS, INC.

Inventor： Nicolas Loubet ,  Stephane Monfray ,  Ronald Kevin Sampson

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L21/823431 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/823418 ,  H01L21/823468 ,  H01L21/823481 ,  H01L21/845 ,  H01L29/0673 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: Elongated fins of a first semiconductor material are insulated from and formed over an underlying substrate layer (of either SOI or bulk type). Elongated gates of a second semiconductor material are then formed to cross over the elongated fins at channel regions, and the gate side walls are covered by sidewall spacers. A protective material is provided to cover the underlying substrate layer and define sidewall spacers on side walls of the elongated fins between the elongated gates. The first semiconductor material and insulating material of the elongated fins located between the protective material sidewall spacers (but not under the elongated gates) is removed to form trenches aligned with the channel regions. Additional semiconductor material is then epitaxially grown inside each trench between the elongated gates to form source-drain regions adjacent the channel regions formed by the elongated fins of the first semiconductor material located under the elongated gates.

Abstract translation: 第一半导体材料的细长散热片与下层基底层（SOI或本体型）绝缘和形成。 然后形成第二半导体材料的细长的栅极，以在沟道区域上跨过细长的翅片，并且栅极侧壁被侧壁间隔物覆盖。 提供保护材料以覆盖下面的基底层并且在细长门之间限定细长翅片的侧壁上的侧壁间隔物。 位于保护材料侧壁间隔件（但不在细长门下）的细长翅片的第一半导体材料和绝缘材料被去除以形成与沟道区域对准的沟槽。 然后在细长门之间的每个沟槽内外延生长另外的半导体材料，以形成邻近由位于细长栅极下方的第一半导体材料的细长鳍片形成的沟道区域的源极 - 漏极区域。

公开(公告)号：US20150075749A1

公开(公告)日：2015-03-19

申请号：US14487758

申请日：2014-09-16

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Stephane Monfray ,  Sandrine Lhostis ,  Christophe Maitre ,  Olga Kokshagina ,  Philippe Coronel

IPC: H05K1/02 ,  F28F27/02 ,  F28D9/00

CPC classification number: H05K1/0203 ,  F28D9/0062 ,  F28F27/02 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit chip cooling device includes a network of micropipes. A first pipe portion and a second pipe portion of the network are connected by at least one valve. The valve is formed of a bilayer strip. In response to change in temperature, the shape of the bilayer strip changes to move the valve from a substantially closed position to an open position. In one configuration, the change is irreversible. In another configuration, the change is reversible in response to an opposite change in temperature.

Abstract translation: 集成电路芯片冷却装置包括微孔网络。 网络的第一管部分和第二管部分通过至少一个阀连接。 阀由双层条形成。 响应于温度的变化，双层带的形状改变以将阀从基本上关闭的位置移动到打开位置。 在一个配置中，更改是不可逆转的。 在另一种配置中，响应于相反的温度变化，该变化是可逆的。

公开(公告)号：US20150042205A1

公开(公告)日：2015-02-12

申请号：US14455110

申请日：2014-08-08

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Stephane Monfray ,  Arthur Arnaud ,  Thomas Skotnicki ,  Onoriu Puscasu ,  Sebastien Boisseau

IPC: H02N10/00

CPC classification number: H02N10/00 ,  F03G7/06 ,  H02N1/08 ,  H02N2/18 ,  Y10T29/4913

Abstract: A device for converting thermal power into electric power includes many conversion cells arranged inside and on top of a substrate. Each conversion cell includes a curved bimetal strip and first and second diodes coupled to the bimetal strip. The diodes are arranged in a semiconductor region of the substrate.

Abstract translation: 用于将热功率转换成电力的装置包括布置在基板的内部和顶部的许多转换单元。 每个转换单元包括弯曲双金属条和耦合到双金属条的第一和第二二极管。 二极管被布置在衬底的半导体区域中。