公开(公告)号：US20220173128A1

公开(公告)日：2022-06-02

申请号：US17398566

申请日：2021-08-10

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Jun KIM ,  So Young KOO ,  Eok Su KIM ,  Yun Yong NAM ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L27/12 ,  H01L29/786

Abstract: A display device according to an embodiment includes a light blocking layer disposed on a substrate; an oxygen supply layer disposed on and contacting the light blocking layer; a semiconductor layer disposed on the oxygen supply layer; and a light emitting diode electrically connected with the semiconductor layer. The semiconductor layer includes an oxide semiconductor, and the oxygen supply layer includes a metal oxide that includes at least one of indium, zinc, gallium, and tin.

公开(公告)号：US20220140032A1

公开(公告)日：2022-05-05

申请号：US17343817

申请日：2021-06-10

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Won LEE ,  Eun Hye KO ,  Yeon Hong KIM ,  Eun Hyun KIM ,  Sun Hee LEE ,  Jun Hyung LIM

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.

公开(公告)号：US20220013608A1

公开(公告)日：2022-01-13

申请号：US17220966

申请日：2021-04-02

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Jun KIM ,  So Young KOO ,  Eok Su KIM ,  Yun Yong NAM ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device includes: a substrate; a first semiconductor layer disposed on the substrate, where the first semiconductor layer includes a channel region and a doped region; a first gate electrode disposed to overlap the channel region of the first semiconductor layer; an intermediate film disposed on the first semiconductor layer and the first gate electrode; and a first electrode disposed on the intermediate film, where an opening is defined through the intermediate film to overlap the doped region of the first semiconductor layer, the doped region of the first semiconductor layer and the first electrode contacts each other through the opening, and an area of a cross-section of the opening parallel to the substrate is in a range of about 49 μm2 to about 81 μm2.

公开(公告)号：US20210343822A1

公开(公告)日：2021-11-04

申请号：US17223505

申请日：2021-04-06

Applicant: Samsung Display Co., LTD.

Inventor： Kyungjin JEON ,  Soyoung KOO ,  Eok Su KIM ,  Hyungjun KIM ,  Yunyong NAM ,  Jun Hyung LIM

IPC: H01L27/32

Abstract: An electronic apparatus includes a first transistor including a first oxide semiconductor pattern, a second transistor including a second oxide semiconductor pattern, a blocking layer including a conductive material, a signal line including a first line and a second line which are disposed on different layers, and a bridge pattern electrically connected to each of the first transistor, the first line of the signal line, and the second line of the signal line, wherein the first line of the signal line and the blocking layer are disposed on a same layer, and the second line of the signal line and the first oxide semiconductor pattern are disposed on a same layer.

公开(公告)号：US20210328102A1

公开(公告)日：2021-10-21

申请号：US17171451

申请日：2021-02-09

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok PARK ,  Myoung Hwa KIM ,  Tae Sang KIM ,  Yeon Keon MOON ,  Geun Chul PARK ,  Jun Hyung LIM ,  Hye Lim CHOI

IPC: H01L33/12 ,  H01L27/15 ,  H01L33/56 ,  H01L33/62 ,  H01L33/00

Abstract: A display device may include a first gate electrode on a substrate, a buffer layer on the first gate electrode, a first active pattern on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor, a source pattern and a drain pattern respectively on ends of the first active pattern, an insulation layer overlapping the source pattern and the drain pattern on the buffer layer, an oxygen supply pattern on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern, a second active pattern on the insulation layer and spaced apart from the oxygen supply pattern, the second active pattern including a channel region, and a source region and a drain region, an insulation pattern on the channel region of the second active pattern, and a second gate electrode on the insulation pattern.

公开(公告)号：US20210305354A1

公开(公告)日：2021-09-30

申请号：US17344860

申请日：2021-06-10

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok SON ,  Myoung Hwa KIM ,  Jay Bum KIM ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32 ,  G09G3/3258 ,  G09G3/3291 ,  H01L51/52 ,  H01L51/56

Abstract: A display device includes a substrate and a pixel disposed on the substrate. The pixel includes a first transistor, a second transistor electrically connected to the first transistor, a third transistor electrically connected to the first transistor, and a light-emitting diode element electrically connected to at least one of the first transistor and the third transistor. The first transistor includes a first semiconductor member and a first gate electrode. The first semiconductor member includes an oxide semiconductor material. The first gate electrode is disposed between the first semiconductor member and the substrate. The second transistor includes a second semiconductor member and a second gate electrode. The second semiconductor member includes the oxide semiconductor material. The second semiconductor member is disposed between the second gate electrode and the substrate. The third transistor includes a third semiconductor member including silicon.

公开(公告)号：US20210249499A1

公开(公告)日：2021-08-12

申请号：US17074323

申请日：2020-10-19

Applicant: Samsung Display Co., Ltd.

Inventor： Kyung Jin JEON ,  So Young KOO ,  Eok Su KIM ,  Hyung Jun KIM ,  Jun Hyung LIM

IPC: H01L27/32

Abstract: A display device and a method of driving a display device are provided. A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern, a buffer layer on the first conductive layer, a semiconductor layer including a semiconductor pattern on the buffer layer, a gate insulating layer on the semiconductor pattern, a second conductive layer including a gate electrode on the gate insulating layer, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including a first conductive pattern electrically coupling the lower light blocking pattern to the semiconductor pattern, wherein the first conductive pattern is coupled to the lower light blocking pattern through a first contact hole passing through the planarization layer and the buffer layer, and coupled to the semiconductor pattern through a second contact hole passing through the planarization layer.

公开(公告)号：US20210050398A1

公开(公告)日：2021-02-18

申请号：US16877977

申请日：2020-05-19

Applicant: Samsung Display Co., LTD.

Inventor： Myeong Ho KIM ,  Jay Bum KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32 ,  H01L51/56 ,  H01L29/786

Abstract: A display device and a method of manufacturing a display device are provided. A display device includes a first conductive layer on a first gate insulating film and including a first gate electrode and a first electrode of a capacitor connected to the first gate electrode, and a second conductive layer on the second interlayer insulating film and including a first and a second source/drain electrode, and a second electrode of the capacitor, the second electrode of the capacitor is in a trench structure in which the second interlayer insulating film is partially removed.

公开(公告)号：US20210036029A1

公开(公告)日：2021-02-04

申请号：US16876984

申请日：2020-05-18

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok PARK ,  Myoung Hwa KIM ,  Tae Sang KIM ,  Hyung Jun KIM ,  Yeon Keon MOON ,  Geun Chul PARK ,  Sang Woo SOHN ,  Jun Hyung LIM ,  Kyung Jin JEON ,  Hye Lim CHOI

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1362

Abstract: A display device includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including an oxide semiconductor and a first active layer, a first gate insulating layer disposed on the first semiconductor layer and the buffer layer, a second semiconductor layer disposed on the first gate insulating layer and including an oxide semiconductor, a second active layer, and a first oxide layer on the first active layer, a second gate insulating layer disposed on the second semiconductor layer, a first conductive layer disposed on the second gate insulating layer, an insulating layer disposed on the first conductive layer, a second conductive layer disposed on the insulating layer, a passivation layer disposed on the second conductive layer, and a third conductive layer disposed on the first passivation layer.

公开(公告)号：US20210036028A1

公开(公告)日：2021-02-04

申请号：US16836651

申请日：2020-03-31

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Hwa KIM ,  Joon Seok PARK ,  So Young KOO ,  Tae Sang KIM ,  Yeon Keon MOON ,  Geun Chul PARK ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66

Abstract: A display device includes a pixel connected to a scan line, and a data line crossing the scan line, wherein the pixel includes a light-emitting element, a driving transistor configured to control a driving current supplied to the light-emitting element according to a data voltage applied from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal that is applied to the scan line. The driving transistor includes a first active layer including an oxide semiconductor, and a first oxide layer disposed on the first active layer and including an oxide semiconductor. The first switching transistor includes a second active layer including an oxide semiconductor, and the first oxide layer is not disposed on the second active layer.