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公开(公告)号：US20230180545A1
公开(公告)日：2023-06-08
申请号：US18161844
申请日：2023-01-30
发明人： Yeon Hong KIM , Eun Hye KO , Eun Hyun KIM , Kyoung Won LEE , Sun Hee LEE , Jun Hyung LIM
IPC分类号： H10K59/126 , H10K59/131
CPC分类号： H10K59/126 , H10K59/1315 , H01L27/124
摘要： A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
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公开(公告)号：US20240341132A1
公开(公告)日：2024-10-10
申请号：US18745977
申请日：2024-06-17
发明人： Yeon Hong KIM , Eun Hye KO , Eun Hyun KIM , Kyoung Won LEE , Sun Hee LEE , Jun Hyung LIM
IPC分类号： H10K59/126 , H01L27/12 , H10K59/12 , H10K59/121 , H10K59/131
CPC分类号： H10K59/126 , H10K59/1315 , H01L27/124 , H10K59/1201 , H10K59/1213
摘要： A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
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3.发明公开公开(公告)号：US20240121998A1
公开(公告)日：2024-04-11
申请号：US18446234
申请日：2023-08-08
发明人： Sun Hee LEE , Eun Hye KO , Sang Woo SOHN , Jung Hoon LEE , Hyun Mo LEE , Hyun Jun JEONG
IPC分类号： H10K59/124 , H10K59/12 , H10K59/131
CPC分类号： H10K59/124 , H10K59/1201 , H10K59/131
摘要： A thin-film transistor including an active layer disposed on a substrate and including a channel region, a source region connected to a side of the channel region, and a drain region connected to the other side of the channel region; a gate insulating layer on the channel region of the active layer; and a gate electrode on the gate insulating layer. A slope of each side surface of the gate electrode with respect to a boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel). A slope of each side surface of the gate insulating layer with respect to the boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel).
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公开(公告)号：US20210167125A1
公开(公告)日：2021-06-03
申请号：US17267783
申请日：2019-07-23
发明人： Eun Hyun KIM , Eun Hye KO , Se Ryeong KIM , Eok Su KIM , Sun Hee LEE
摘要： A display device according to some embodiments includes: a substrate; a first transistor and a second transistor disposed on the substrate and spaced apart from each other; a first electrode connected to one of the first transistor and the second transistor; a second electrode overlapping the first electrode; and a light emitting layer between the first electrode and the second electrode, wherein the first transistor may include: a first semiconductor layer on the substrate; a first gate electrode on the first semiconductor layer; and a first source electrode and a first drain electrode connected to the first semiconductor layer, and the second transistor may include: a second semiconductor layer on the substrate; a second gate electrode on the second semiconductor layer; and a second source electrode and a second drain electrode connected to the second semiconductor layer, and the first gate electrode and the second semiconductor layer may be on the same layer.
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公开(公告)号：US20240040920A1
公开(公告)日：2024-02-01
申请号：US18343231
申请日：2023-06-28
发明人： Kyoung Won LEE , Eun Hye KO , Yeon Hong KIM , Eun Hyun KIM , Sun Hee LEE
IPC分类号： H10K59/88 , H10K59/121 , H10K59/126 , H10K59/12
CPC分类号： H10K59/88 , H10K59/1213 , H10K59/126 , H10K59/1201
摘要： A display device includes a light blocking layer positioned on a substrate and including a first portion and a second portion having a thickness greater than a thickness of the first portion; a buffer layer positioned above the light blocking layer; a semiconductor layer positioned over the buffer layer and including a source region, a channel region, and a drain region; a gate insulating layer positioned over the semiconductor layer; a gate electrode positioned over the gate insulating layer; an interlayer insulating layer positioned over the gate electrode, and including a first opening overlapping the second portion of the light blocking layer in a plan view and a second opening overlapping the source region of the semiconductor layer in a plan view; and a dummy gate electrode positioned on a side surface of the first opening.
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公开(公告)号：US20220020837A1
公开(公告)日：2022-01-20
申请号：US17223984
申请日：2021-04-06
发明人： Yeon Hong KIM , Eun Hye KO , Eun Hyun KIM , Kyoung Won LEE , Sun Hee LEE , Jun Hyung LIM
IPC分类号： H01L27/32
摘要： A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
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7.发明公开公开(公告)号：US20230163217A1
公开(公告)日：2023-05-25
申请号：US17870805
申请日：2022-07-21
发明人： Kyoung Won LEE , Eun Hye KO , Yeon Hong KIM , Eun Hyun KIM , Hyung Jun KIM , Sun Hee LEE , Jun Hyung LIM
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1218 , H01L29/66969
摘要： A thin-film transistor includes a light-shielding layer disposed on a substrate, an oxygen supply layer disposed on the light-shielding layer and including a metal oxide, a buffer layer disposed on the substrate and covering the oxygen supply layer, an active layer disposed on the buffer layer, where the active layer includes a channel area overlapping the light-shielding layer, and a first electrode area and a second electrode area respectively in contact with opposing sides of the channel area, a gate insulating layer disposed on the channel area of the active layer.
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公开(公告)号：US20220140032A1
公开(公告)日：2022-05-05
申请号：US17343817
申请日：2021-06-10
发明人： Kyoung Won LEE , Eun Hye KO , Yeon Hong KIM , Eun Hyun KIM , Sun Hee LEE , Jun Hyung LIM
摘要： A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.
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