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公开(公告)号：US20240074222A1
公开(公告)日：2024-02-29
申请号：US18240451
申请日：2023-08-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Oul CHO , Kwanghee KIM , Yuho WON , Jae Yong LEE , Taehyung KIM
IPC: H10K50/115 , C09K11/56 , C09K11/88 , H10K50/16
CPC classification number: H10K50/115 , C09K11/565 , C09K11/883 , H10K50/16 , H10K2102/331
Abstract: An electroluminescent device includes a quantum dot layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the quantum dot layer and the second electrode; wherein the quantum dot layer is configured to emit a first light, the quantum dot layer including first quantum dots, wherein the first quantum dots include a first semiconductor nanocrystal, wherein the electron transport layer includes zinc oxide nanoparticles, wherein the electroluminescent device further comprises a first layer between the quantum dot layer and the electron transport layer, the first layer including inorganic nanoparticles, wherein the inorganic nanoparticles has a different composition from the zinc oxide nanoparticles and the first quantum dots, and wherein the inorganic nanoparticles comprises a metal chalcogenide having a bandgap energy of greater than or equal to about 2.9 electron volts (eV) and less than or equal to about 10 eV.
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公开(公告)号：US20230212456A1
公开(公告)日：2023-07-06
申请号：US18113650
申请日：2023-02-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Sung Woo KIM , Jin A KIM , Jeong Hee LEE , Tae Hyung KIM , Eun Joo JANG
CPC classification number: C09K11/883 , C09K11/02 , H05B33/14 , H10K50/15 , H10K50/16 , H10K50/17 , H10K50/115 , H10K50/171 , B82Y20/00
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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公开(公告)号：US20230071604A1
公开(公告)日：2023-03-09
申请号：US18054687
申请日：2022-11-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Kun Su PARK , Yuho WON , Jeong Hee LEE , Eun Joo JANG , Eun Joo JANG , Hyo Sook JANG , Yong Seok HAN , Heejae CHUNG
Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
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公开(公告)号：US20220002621A1
公开(公告)日：2022-01-06
申请号：US17366429
申请日：2021-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo KIM , Eun Joo JANG , Hyo Sook JANG , Hwea Yoon KIM , Yuho WON
Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.
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公开(公告)号：US20210207027A1
公开(公告)日：2021-07-08
申请号：US17187926
申请日：2021-03-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Sung Woo KIM , Jin A KIM , Jeong Hee LEE , Tae Hyung KIM , Eun Joo JANG
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20210104696A1
公开(公告)日：2021-04-08
申请号：US17062162
申请日：2020-10-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sujin PARK , Yuho WON , Eun Joo JANG , Dae Young CHUNG , Sung Woo KIM , Jin A. KIM , Yong Seok HAN
Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, each of the first and second quantum dots has a core-shell structure including one or more shells, and the first and second quantum dots have different numbers of shells from each other or have different total thicknesses of the one or more shells from each other.
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公开(公告)号：US20200332189A1
公开(公告)日：2020-10-22
申请号：US16851495
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee LEE , Hyo Sook JANG , Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Yuho WON , Eun Joo JANG , Yong Seok HAN
Abstract: A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.
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公开(公告)号：US20200266373A1
公开(公告)日：2020-08-20
申请号：US16863164
申请日：2020-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung KIM , Eun Joo JANG , Dae Young CHUNG , Yong Wook KIM , Yuho WON , Oul CHO
Abstract: An electroluminescence display device, including a first electrode and a second electrode facing each other; a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer including a plurality of quantum dots and not including cadmium, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the device has color reproducibility according to a DCI standard of greater than or equal to about 89%.
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公开(公告)号：US20200224094A1
公开(公告)日：2020-07-16
申请号：US16739595
申请日：2020-01-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Yong Wook KIM , Eun Joo JANG , Hyo Sook JANG
Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.
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公开(公告)号：US20200217974A1
公开(公告)日：2020-07-09
申请号：US16825293
申请日：2020-03-20
Inventor： Garam PARK , Tae Gon KIM , Nayoun WON , Shin Ae JUN , Soo Kyung KWON , Seon-Yeong KIM , Shang Hyeun PARK , Jooyeon AHN , Yuho WON , Eun Joo JANG , Hyo Sook JANG
Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
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