公开(公告)号：US20230287231A1

公开(公告)日：2023-09-14

申请号：US18180419

申请日：2023-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hiroko ENDO ,  Keigo FURUTA ,  Takao MOTOYAMA ,  Yukika YAMADA ,  Tomoyuki KIKUCHI ,  Eun Joo JANG ,  Hyo Sook JANG ,  Jun-Mo YOO ,  Tae Ho KIM ,  Yuho WON

IPC: C09D11/50 ,  C09D11/037 ,  C09D11/033 ,  C09D11/322 ,  C09D11/36 ,  C09K11/02 ,  C09K11/88 ,  C09K11/08 ,  H10K50/115 ,  H10K71/13

CPC classification number: C09D11/50 ,  C09D11/037 ,  C09D11/033 ,  C09D11/322 ,  C09D11/36 ,  C09K11/025 ,  C09K11/883 ,  C09K11/0883 ,  H10K50/115 ,  H10K71/135 ,  B82Y20/00

Abstract: A quantum dot ink composition including a plurality of quantum dots, and a mixed solvent including a Solvent a and a Solvent b, a quantum dot electroluminescent device including a light emitting layer formed from the quantum dot composition, and a method of making the quantum dot electroluminescent device are provided, where Solvent a is a cycloalkane compound with at least one ring carbon having a linear C4 to C16 alkyl group, an aromatic hydrocarbon compound having a linear C2 to C12 alkyl group, or a combination thereof, and Solvent b is a fluorinated alcohol.

公开(公告)号：US20230114604A1

公开(公告)日：2023-04-13

申请号：US18065910

申请日：2022-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok HAN ,  Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Kun Su PARK ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: H01L33/06 ,  H01L33/20 ,  C09K11/88 ,  C01B19/04 ,  H01L33/26

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

公开(公告)号：US20230086635A1

公开(公告)日：2023-03-23

申请号：US18059075

申请日：2022-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam PARK ,  Eun Joo JANG ,  Yongwook KIM ,  Jihyun MIN ,  Hyo Sook JANG ,  Shin Ae JUN ,  Taekhoon KIM ,  Yuho WON

IPC: C09K11/88 ,  C09K11/70

Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US20230079704A1

公开(公告)日：2023-03-16

申请号：US17897609

申请日：2022-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Woo KIM ,  Yuho WON ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: C09K11/88 ,  C01B19/00 ,  H01L51/50

Abstract: A semiconductor nanoparticle, a production method thereof, and an electroluminescent device including the same. The production method includes: combining a magnesium precursor and an additive with a chalcogen precursor in a reaction medium including an organic solvent and an organic ligand; heating the reaction medium to a reaction temperature; and reacting the magnesium precursor and the chalcogen precursor in the presence of the additive to form a magnesium chalcogenide, wherein the semiconductor nanoparticle comprises the magnesium chalcogenide, wherein the magnesium chalcogenide comprises magnesium; and selenium, sulfur, or a combination thereof, and wherein the additive includes a hydride compound including an alkali metal, calcium, barium, aluminum, or a combination thereof.

公开(公告)号：US20230074734A1

公开(公告)日：2023-03-09

申请号：US17895253

申请日：2022-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yuho WON ,  Sung Woo KIM ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: H01L51/50 ,  H01L51/56 ,  B82Y40/00 ,  H01L51/00

Abstract: An electroluminescent device includes a first electrode; a second electrode spaced apart from the first electrode; and a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer includes semiconductor nanoparticles, wherein the semiconductor nanoparticles do not include cadmium, the semiconductor nanoparticles have a core shell structure, the semiconductor nanoparticles include zinc, selenium, tellurium, and sulfur, wherein in a two dimensional image obtained by an electron microscopy analysis, the semiconductor nanoparticles show an average value of a circularity defined by the following equation of greater than or equal to about 0.8 and less than or equal to about 1: circularity = 4 ⁢ π × Area [ Perimeter ] 2 wherein Area is an area of a two dimensional image of an individual semiconductor nanoparticle, and Perimeter is a circumference of the two dimensional image of the individual semiconductor nanoparticle.

公开(公告)号：US20220416187A1

公开(公告)日：2022-12-29

申请号：US17851211

申请日：2022-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hyung KIM ,  Heejae CHUNG ,  Eun Joo JANG ,  Sujin PARK ,  Yuho WON

IPC: H01L51/50

Abstract: An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (λmax) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm. During a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λmax) of the blue light emitting layer may exhibit a first emission peak wavelength (a 1st λmax wavelength) that is less than an emission peak wavelength at the first voltage (λmax@first voltage) and an emission peak wavelength at the second voltage (λmax@second voltage), and during the bias voltage change, a change width in emission peak wavelength (λmax) is less than or equal to about 4 nm.

公开(公告)号：US20220204844A1

公开(公告)日：2022-06-30

申请号：US17558774

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Hwea Yoon KIM ,  Jeong Hee LEE ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: C09K11/88 ,  C09K11/02 ,  C01G9/00

Abstract: A quantum dot including zinc, tellurium, selenium, and sulfur, wherein the quantum dot comprises a core and a shell disposed on the core, and wherein the quantum dot is a cadmium-free red light-emitting quantum dot and has an emission peak wavelength of greater than or equal to about 600 nanometers (nm), and efficiency of greater than or equal to about 50%.

公开(公告)号：US20220017818A1

公开(公告)日：2022-01-20

申请号：US17490552

申请日：2021-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Nayoun WON ,  Sungwoo HWANG ,  Eun Joo JANG ,  Soo Kyung KWON ,  Yong Wook KIM ,  Jihyun MIN ,  Garam PARK ,  Shang Hyeun PARK ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yong Seok HAN

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L51/50 ,  H01L27/32 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US20210222061A1

公开(公告)日：2021-07-22

申请号：US17226154

申请日：2021-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook JANG ,  Yuho WON ,  Sungwoo HWANG ,  Ji Yeong KIM ,  Eun Joo JANG

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L51/50 ,  H01L27/32 ,  C09D133/00 ,  C08F220/06 ,  C09D133/02

Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.

公开(公告)号：US20200071612A1

公开(公告)日：2020-03-05

申请号：US16554839

申请日：2019-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Ha Il KWON ,  Eun Joo JANG ,  Jaejun CHANG ,  Dae Young CHUNG

IPC: C09K11/88 ,  C09K11/08 ,  H01L51/50

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m2).