利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

35 条记录 (耗时 0.02 秒)

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220271034A1

    公开(公告)日：2022-08-25

    申请号：US17740900

    申请日：2022-05-10

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Taehyung KIM ,  Jinwoo JEONG ,  Jiwook KWON ,  Raheel AZMAT ,  Kwanyoung CHUN

    IPC分类号： H01L27/092 ,  H01L23/528 ,  H01L27/11 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/02

    摘要： A semiconductor device including a substrate; first to third active patterns on an upper portion of the substrate, the active patterns being sequentially arranged in a first direction and extending in a second direction crossing the first direction; first to third power rails respectively connected to the first to third active patterns, wherein a width of the second active pattern in the first direction is at least two times a width of the first active pattern in the first direction and is at least two times a width of the third active pattern in the first direction, the first active pattern is not vertically overlapped with the first power rail, the second active pattern is vertically overlapped with the second power rail, and the third active pattern is not vertically overlapped with the third power rail.

    INDUCTION HEATING COOKING APPARATUS
    3.
    发明申请
    INDUCTION HEATING COOKING APPARATUS 有权

    公开(公告)号：US20220174793A1

    公开(公告)日：2022-06-02

    申请号：US17675867

    申请日：2022-02-18

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sungwook CHO ,  Junghye KANG ,  Youngtae KIM ,  Taehyung KIM

    IPC分类号： H05B6/12 ,  H05B3/74

    摘要： An induction heating cooking apparatus includes a glass provided such that a cooking container is disposed on an upper surface thereof and a side surface thereof is exposed to the outside. The induction heating cooking apparatus also includes an operating coil positioned below the glass to inductively heat the cooking container by generating a magnetic field. The side surface includes a first surface extending from the upper surface of the glass and having a first curvature. The side surface also includes a second surface extending from the first surface and having a second curvature different from the first curvature. The side surface further includes a third surface extending from the second surface to a lower surface of the glass and having a third curvature different from the first curvature and the second curvature.

    SEMICONDUCTOR DEVICE INCLUDING STANDARD CELLS
    9.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING STANDARD CELLS 有权

    公开(公告)号：US20220383948A1

    公开(公告)日：2022-12-01

    申请号：US17824464

    申请日：2022-05-25

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jaehyun LIM ,  Taehyung KIM ,  Sangshin HAN

    IPC分类号： G11C11/419 ,  H01L27/11 ,  H01L27/02

    摘要： A semiconductor device includes a first memory column group including a plurality of memory columns in which a plurality of bit cells are disposed; and a first peripheral column group including a plurality of peripheral columns in which a plurality of standard cells are disposed, wherein the plurality of standard cells are configured to perform an operation of reading/writing data from/to the plurality of bit cells through a plurality of bit lines, wherein the first memory column group and the first peripheral column group correspond to each other in a column direction, and wherein at least one of the plurality of peripheral columns has a cell height different from cell heights of the other peripheral columns, the cell height being measured in a row direction in which a gate line is extended.

    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220328479A1

    公开(公告)日：2022-10-13

    申请号：US17840060

    申请日：2022-06-14

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Taehyung KIM ,  Panjae PARK ,  Jaeseok YANG

    IPC分类号： H01L27/092 ,  H01L23/528 ,  H01L29/10 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78

    摘要： A semiconductor device includes a substrate with a first active region; first and second active patterns extending in a first direction and spaced apart in a second direction, and each having a source pattern, a channel pattern, and a drain pattern that are sequentially stacked; first and second gate electrodes that surround the channel patterns of the first and second active patterns and extend in the first direction; an interlayer dielectric layer that covers the first and second active patterns and the first and second gate electrodes; a first active contact that penetrates the interlayer dielectric layer and is coupled to the first active region between the first and second active patterns; and a first power rail on the interlayer dielectric layer and electrically connected to the first active contact, each of the first and second active patterns including an overlapping region that vertically overlaps the first power rail.