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公开(公告)号：US06572252B1
公开(公告)日：2003-06-03
申请号：US09591085
申请日：2000-06-09
IPC分类号： F21V704
CPC分类号： H01L21/67005
摘要： The present invention relates to illuminating an interior portion of a processing chamber in a semiconductor processing system. A fiber optic light source is operatively associated with the processing chamber to illuminate the interior of the chamber to facilitate viewing the interior of the chamber.
摘要翻译： 本发明涉及照射半导体处理系统中的处理室的内部部分。 光纤光源与处理室可操作地相关联以照亮室的内部，以便于观察室的内部。
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42.发明授权公开(公告)号：US06479820B1
公开(公告)日：2002-11-12
申请号：US09557720
申请日：2000-04-25
IPC分类号： G03F730
摘要： In one embodiment, the present invention relates to a method of processing a photoresist on a semiconductor structure, involving the steps of exposing and developing the photoresist; evaluating the exposed and developed photoresist to determine if negative charges exist thereon; contacting the exposed and developed photoresist with a positive ion carrier thereby reducing any negative charges thereon; and evaluating the exposed and developed photoresist with an electron beam. In another embodiment, the present invention relates to a system for processing a patterned photoresist on a semiconductor structure, containing a charge sensor for determining if charges exist on the patterned photoresist and measuring the charges; a means for contacting the patterned photoresist with a positive ion carrier to reduce the charges thereon; a controller for setting at least one of time of contact between the patterned photoresist and the positive ion carrier, temperature of the positive ion carrier, concentration of positive ions in the positive ion carrier, and pressure under which contact between the patterned photoresist and the positive ion carrier occurs; and a device for evaluating the patterned photoresist with an electron beam.
摘要翻译： 在一个实施方案中，本发明涉及一种在半导体结构上处理光致抗蚀剂的方法，包括曝光和显影光致抗蚀剂的步骤; 评估曝光和显影的光致抗蚀剂以确定其上是否存在负电荷; 使曝光和显影的光致抗蚀剂与正离子载体接触，从而减少其上的任何负电荷; 并用电子束评估曝光和显影的光致抗蚀剂。 在另一个实施例中，本发明涉及一种用于处理半导体结构上的图案化光致抗蚀剂的系统，其包含用于确定图案化光致抗蚀剂上是否存在电荷并测量电荷的电荷传感器; 用于使图案化的光致抗蚀剂与正离子载体接触以减少其上的电荷的装置; 控制器，用于设置图案化的光致抗蚀剂和正离子载体之间的接触时间中的至少一个，正离子载体的温度，正离子载体中的正离子的浓度以及图案化的光致抗蚀剂和阳离子的正极之间的接触 发生离子载体; 以及用电子束评估图案化光致抗蚀剂的装置。
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43.发明授权System and method for imprint lithography to facilitate dual damascene integration with two imprint acts 有权用于压印光刻的系统和方法，以促进双重镶嵌与两个印记动作的整合公开(公告)号：US08007631B2
公开(公告)日：2011-08-30
申请号：US11741991
申请日：2007-04-30
CPC分类号： H01L21/76817 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31144 , H01L21/76811
摘要： A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the pair contains the via features of the dual damascene pattern and the second imprint mold of the pair contains the trench features. The via feature imprint mold is brought into contact with a first imaging layer deposited upon a first transfer layer which is deposited upon a dielectric layer of a substrate. The trench feature imprint mold is brought into contact with a second imaging layer deposited upon a second transfer layer which is deposited upon the first imaging layer of the substrate. When each imaging layer is exposed to a source of illumination, it cures with a structure matching the features of the corresponding imprint mold. A sequence of etches transfer and combine the via features from the first imaging layer with the trenches from the second imaging layer to create the dual damascene openings within the dielectric layer.
摘要翻译： 提供了一种系统和方法来促进与两个印记动作的双镶嵌互连集成。 该方法提供了一对包含要印制的双镶嵌图案的半透明压印模具。 该对的第一压印模具包含双镶嵌图案的通孔特征，并且该对的第二压印模具包含沟槽特征。 通孔特征压印模具与沉积在沉积在基板的电介质层上的第一转印层上的第一成像层接触。 沟槽特征压印模具与沉积在沉积在基板的第一成像层上的第二转印层上的第二成像层接触。 当每个成像层暴露于照明源时，它将以匹配相应压印模具的特征的结构固化。 一系列蚀刻将来自第一成像层的通孔特征与来自第二成像层的沟槽结合，以在介电层内形成双镶嵌开口。
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公开(公告)号：US07384569B1
公开(公告)日：2008-06-10
申请号：US10909464
申请日：2004-08-02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Disclosed are photolithographic systems and methods, and more particularly systems and methodologies that enhance imprint mask feature resolution. An aspect generates feedback information that facilitates control of imprint mask feature size and resolution via employing a scatterometry system to detect resolution enhancement need, and decreasing imprint mask feature size and increasing resolution of the imprint mask via a trim etch procedure.
摘要翻译： 公开了光刻系统和方法，更具体地说，增强了印迹掩模特征分辨率的系统和方法。 方面产生反馈信息，其通过采用散射测量系统来检测分辨率增强需求，以及通过修剪蚀刻程序减小压印掩模特征尺寸并增加印迹掩模的分辨率，从而有助于控制印迹掩模特征尺寸和分辨率。
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45.发明授权Optimizing critical dimension uniformity utilizing a resist bake plate simulator 有权使用抗蚀剂烘烤板模拟器优化临界尺寸均匀性公开(公告)号：US07334202B1
公开(公告)日：2008-02-19
申请号：US11145327
申请日：2005-06-03
IPC分类号： G06F17/50
CPC分类号： G06F17/5018 , G03F7/38 , G06F2217/80
摘要： A system for optimizing critical dimension uniformity in semiconductor manufacturing processes is provided. The system comprises a bake plate simulator to model a physical bake plate. A finite element analysis engine uses information from the bake plate simulator to calculate missing information. A lithography simulator predicts outcomes of a lithography process using information from the bake plate simulator and the finite element analysis engine. The system can be used in a predictive capacity or as part of a process control system.
摘要翻译： 提供了一种用于优化半导体制造工艺中的关键尺寸均匀性的系统。 该系统包括用于对物理烘烤板进行建模的烤盘模拟器。 有限元分析引擎使用来自烘烤板模拟器的信息来计算缺失的信息。 光刻模拟器使用来自烘烤板模拟器和有限元分析引擎的信息来预测光刻工艺的结果。 该系统可以以预测能力使用或作为过程控制系统的一部分使用。
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46.发明申请SYSTEM AND METHOD FOR IMPRINT LITHOGRAPHY TO FACILITATE DUAL DAMASCENE INTEGRATION WITH TWO IMPRINT ACTS 有权系统和方法，用于绘制两幅印刷动画的双重增强整合公开(公告)号：US20070283883A1
公开(公告)日：2007-12-13
申请号：US11741991
申请日：2007-04-30
IPC分类号： C23C10/00
CPC分类号： H01L21/76817 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31144 , H01L21/76811
摘要： A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the pair contains the via features of the dual damascene pattern and the second imprint mold of the pair contains the trench features. The via feature imprint mold is brought into contact with a first imaging layer deposited upon a first transfer layer which is deposited upon a dielectric layer of a substrate. The trench feature imprint mold is brought into contact with a second imaging layer deposited upon a second transfer layer which is deposited upon the first imaging layer of the substrate. When each imaging layer is exposed to a source of illumination, it cures with a structure matching the features of the corresponding imprint mold. A sequence of etches transfer and combine the via features from the first imaging layer with the trenches from the second imaging layer to create the dual damascene openings within the dielectric layer.
摘要翻译： 提供了一种系统和方法来促进与两个印记动作的双镶嵌互连集成。 该方法提供了一对包含要印制的双镶嵌图案的半透明压印模具。 该对的第一压印模具包含双镶嵌图案的通孔特征，并且该对的第二压印模具包含沟槽特征。 通孔特征压印模具与沉积在沉积在基板的电介质层上的第一转印层上的第一成像层接触。 沟槽特征压印模具与沉积在沉积在基板的第一成像层上的第二转印层上的第二成像层接触。 当每个成像层暴露于照明源时，它将以匹配相应压印模具的特征的结构固化。 一系列蚀刻将来自第一成像层的通孔特征与来自第二成像层的沟槽结合，以在介电层内形成双镶嵌开口。
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公开(公告)号：US07295288B1
公开(公告)日：2007-11-13
申请号：US11000869
申请日：2004-12-01
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Systems and methodologies are provided that account for surface variations of a wafer by adjusting grating features of an imprint lithography mask. Such adjustment employs piezoelectric elements as part of the mask, which can change dimensions (e.g., a height change) and/or move when subjected to an electric voltage. Accordingly, by regulating the amount of electric voltage applied to the piezoelectric elements a controlled expansion for such elements can be obtained, to accommodate for topography variations of the wafer surface.
摘要翻译： 提供了通过调节压印光刻掩模的光栅特征来考虑晶片的表面变化的系统和方法。 这种调节使用压电元件作为掩模的一部分，其可以在经受电压时改变尺寸（例如，高度变化）和/或移动。 因此，通过调节施加到压电元件的电压量，可以获得这些元件的受控膨胀，以适应晶片表面的形貌变化。
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48.发明授权System and method for imprint lithography to facilitate dual damascene integration with two imprint acts 有权用于压印光刻的系统和方法，以促进双重镶嵌与两个印记动作的整合公开(公告)号：US07235474B1
公开(公告)日：2007-06-26
申请号：US10838612
申请日：2004-05-04
IPC分类号： H01L21/44
CPC分类号： H01L21/76817 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31144 , H01L21/76811
摘要： A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the pair contains the via features of the dual damascene pattern and the second imprint mold of the pair contains the trench features. The via feature imprint mold is brought into contact with a first imaging layer deposited upon a first transfer layer which is deposited upon a dielectric layer of a substrate. The trench feature imprint mold is brought into contact with a second imaging layer deposited upon a second transfer layer which is deposited upon the first imaging layer of the substrate. When each imaging layer is exposed to a source of illumination, it cures with a structure matching the features of the corresponding imprint mold. A sequence of etches transfer and combine the via features from the first imaging layer with the trenches from the second imaging layer to create the dual damascene openings within the dielectric layer.
摘要翻译： 提供了一种系统和方法来促进与两个印记动作的双镶嵌互连集成。 该方法提供了一对包含要印制的双镶嵌图案的半透明压印模具。 该对的第一压印模具包含双镶嵌图案的通孔特征，并且该对的第二压印模具包含沟槽特征。 通孔特征压印模具与沉积在沉积在基板的电介质层上的第一转印层上的第一成像层接触。 沟槽特征压印模具与沉积在沉积在基板的第一成像层上的第二转印层上的第二成像层接触。 当每个成像层暴露于照明源时，它将以匹配相应压印模具的特征的结构固化。 一系列蚀刻将来自第一成像层的通孔特征与来自第二成像层的沟槽结合，以在介电层内形成双镶嵌开口。
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公开(公告)号：US20070082277A1
公开(公告)日：2007-04-12
申请号：US11245824
申请日：2005-10-07
申请人： Itty Matthew , Bhanwar Singh
发明人： Itty Matthew , Bhanwar Singh
CPC分类号： G03F1/36
摘要： The subject invention provides a system and method for improving the process margin of a lithographic imaging system. The process margin improvement is achieved through the novel placement of discrete assist features and/or the use of forbidden pitches and specific pitch orientations. Novel geometries are utilized, which take advantage of line-end pull back and/or a lack of resolution of pitches perpendicular to an axis of a dipole illumination source. The strategic placement of a series of discrete scatterbar segments on a mask near positions of critical features, such as, for example, contacts, mitigates resist residue that can result from the use of a contiguous scatterbar.
摘要翻译： 本发明提供了一种用于改善光刻成像系统的工艺余量的系统和方法。 通过新颖的离散辅助特征的放置和/或使用禁止间距和特定的俯仰方向来实现工艺余量的改善。 利用新的几何形状，其利用垂直于偶极照明源的轴线的线端拉回和/或缺少分支的分辨率。 在临界特征（例如接触）位置附近的掩模上的一系列离散散射片段的战略布置减轻了抵抗可能由于使用连续散射线而产生的残留物。
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公开(公告)号：US07158896B1
公开(公告)日：2007-01-02
申请号：US10978604
申请日：2004-11-01
申请人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
发明人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
IPC分类号： G06F19/00
CPC分类号： G03F7/70916 , G03F7/2041 , G03F7/70341
摘要： Systems and/or methods are disclosed for measuring and/or controlling an amount of impurity that is dissolved within an immersion medium employed with immersion lithography. The impurity can be photoresist from a photoresist layer coated upon a substrate surface. A known grating structure is built upon the substrate. A real time immersion medium monitoring component facilitates measuring and/or controlling the amount of impurities dissolved within the immersion medium by utilizing light scattered from the known grating structure.
摘要翻译： 公开了用于测量和/或控制溶解在浸入式光刻中使用的浸渍介质中的杂质量的系统和/或方法。 杂质可以是来自涂覆在基材表面上的光致抗蚀剂层的光致抗蚀剂。 已知的光栅结构被构建在衬底上。 实时浸没介质监测部件通过利用从已知光栅结构散射的光来便于测量和/或控制溶解在浸没介质中的杂质的量。
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