Alkaline liquid developer for lithographic printing plate and method for preparing lithographic printing plate

    公开(公告)号:US06511790B2

    公开(公告)日:2003-01-28

    申请号:US09934520

    申请日:2001-08-23

    申请人: Shuichi Takamiya

    发明人: Shuichi Takamiya

    IPC分类号: G03F730

    CPC分类号: G03F7/322 B41N3/06

    摘要: An alkaline liquid developer suitable for development of an infrared radiation-presensitized plate for use in making a lithographic printing plate, which developer comprises at least one selected from the group consisting of amphoteric surfactants and cationic surfactants; a method for preparing a lithographic printing plate comprising the steps of imagewise light-exposing to infrared radiation, a presensitized plate for use in making a lithographic printing plate, said presensitized plate having an image-forming layer which comprises an IR-absorbing agent, and developing the light-exposed plate with an alkaline liquid developer comprising at least one selected from the group consisting of amphoteric surfactants and cationic surfactants. The alkaline liquid develper can provide a highly sharp and clear image in a lithographic printing plate without damages to the image areas, simultaneously exhibiting highly development performance to the non-image areas. The alkaline liquid developer of the present invention further inhibits occurrence of insoluble matter originated from a binder resin and/or an IR-absorbing agent, as well as adherence of the insoluble matter to the surface of a plate during processing, while retaining liquid conditions suitable for an alkaline liquid developer, and being capable of providing a stable processing procedure in an extended period.

    Method for forming a protection device with slope laterals
    4.
    发明授权
    Method for forming a protection device with slope laterals 有权
    用坡口形成保护装置的方法

    公开(公告)号:US06436612B1

    公开(公告)日:2002-08-20

    申请号:US09712916

    申请日:2000-11-16

    申请人: Ching-Yu Chang

    发明人: Ching-Yu Chang

    IPC分类号: G03F730

    摘要: A method for forming a protection device with slope laterals is provided. Firstly, providing a semiconductor substrate having a plurality of alternative first sacrificial layers and second sacrificial layers formed thereon. A first etching step is performed to remove one portion of each of the first sacrificial layers and thereby expose one portion of each lateral of each of the second sacrificial layers. Subsequently, performing a second etching step to remove one portion of the lateral of the second sacrificial layer. Then, repeatedly and alternately performing the first etching step and the second etching step until completely removing the first sacrificial layers and then obtaining a plurality of protection devices formed of the second sacrificial layers each of which having slope laterals.

    摘要翻译: 提供了一种用于形成具有边坡的保护装置的方法。 首先,提供具有多个替代的第一牺牲层和形成在其上的第二牺牲层的半导体衬底。 执行第一蚀刻步骤以去除每个第一牺牲层的一部分,从而暴露每个第二牺牲层的每个横向的一部分。 随后,执行第二蚀刻步骤以去除第二牺牲层的横向的一部分。 然后,重复地且交替地执行第一蚀刻步骤和第二蚀刻步骤,直到完全去除第一牺牲层,然后获得由具有斜面的第二牺牲层形成的多个保护装置。

    Method for cleaning the surface of substrate to which residues of resist stick

    公开(公告)号:US06372413B1

    公开(公告)日:2002-04-16

    申请号:US09893464

    申请日:2001-06-29

    IPC分类号: G03F730

    摘要: A TMAH developer is applied to a to-be-processed substrate that has an organic resist film formed thereon and having an LSI pattern created by exposure, thereby developing the resist pattern, followed by rinsing processes in which, while the substrate is being rotated at 500 rpm, ozone water containing 3-ppm ozone gas is applied to the substrate for fifteen seconds, thereby decomposing organic matter sticking to the exposed surface of the substrate, and then hydrogen water containing 1.2-ppm hydrogen gas is applied to the substrate for fifteen seconds, with the substrate rotated at 500 rpm, thereby removing the decomposed organic matter from the substrate.

    Photoresist development method employing multiple photoresist developer rinse
    6.
    发明授权
    Photoresist development method employing multiple photoresist developer rinse 有权
    使用多个光致抗蚀剂显影剂冲洗的光刻胶显影方法

    公开(公告)号:US06352818B1

    公开(公告)日:2002-03-05

    申请号:US09387439

    申请日:1999-09-01

    申请人: Hung-Chang Hsieh

    发明人: Hung-Chang Hsieh

    IPC分类号: G03F730

    CPC分类号: G03F7/322 G03F7/3021 G03F7/32

    摘要: A method for forming within a deep ultraviolet (DUV) sensitive photosensitive layer formed upon a substrate employed within a microelectronics fabrication a pattern with attenuated defects and improved strippability. There is provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a photosensitive layer formed of an organic polymer resin plus additives which is sensitive to deep ultraviolet (DUV) irradiation. There is then formed within the photosensitive layer a patterned latent image by selective irradiation with a deep ultraviolet (DUV) source. There is then developed the latent image by successive treatment of the photosensitive layer to a first developer agent at a first concentration and a second developer agent at a second concentration, interspersed with aqueous solvent rinses, to form a patterned photoresist layer with attenuated residues. The patterned photosensitive layer is then formed into a patterned photoresist mask layer by drying and hard baking, with attenuated defects and improved strippability.

    摘要翻译: 形成在微电子学制造中的衬底上形成的深紫外(DUV)感光层的方法,其具有减弱的缺陷和改善的剥离性。 提供了在微电子制造中使用的衬底。 然后在基底上形成由有机聚合物树脂加上对深紫外(DUV)照射敏感的添加剂形成的感光层。 然后通过用深紫外(DUV)源的选择性照射在感光层内形成图案化的潜像。 然后通过将第一浓度的感光层连续处理到第一显影剂并以第二浓度的第二显影剂处理,散布有水性溶剂漂洗,从而形成具有减弱残余物的图案化光致抗蚀剂层,从而显影潜像。 然后通过干燥和硬烘烤将图案化的感光层形成为图案化的光刻胶掩模层,具有减弱的缺陷和改善的剥离性。

    Lithographic plate precursor
    7.
    发明授权
    Lithographic plate precursor 失效
    平版印刷版前体

    公开(公告)号:US06291134B1

    公开(公告)日:2001-09-18

    申请号:US09347848

    申请日:1999-07-08

    IPC分类号: G03F730

    CPC分类号: G03F7/021 G03F7/016

    摘要: There is described a method of preparing a lithographic plate which comprises coating on a lithographic support having a hydrophilic surface a layer of a radiation sensitive coating, imaging the coating then acting on the plate while on the press with aqueous fount solution to remove the unexposed areas of the coating, to reveal the hydrophilic surface of the plate and to leave an ink receptive image, wherein the radiation sensitive coating comprises a diazo salt of formula (I): wherein R1 is an anion, R2 and R3 represent optional substitution, R4 is —N— and —S— and R5 is a group which, after exposure of the plate renders the residue of the diazo salt oleophilic and fount solution insoluble.

    摘要翻译: 描述了一种制备平版印刷版的方法,该方法包括在具有亲水表面的平版印刷载体上涂覆一层辐射敏感涂层,使涂层成像,然后在用水性喷射溶液在压机上作用,从而去除未曝光的区域 以揭示板的亲水表面并留下吸墨图像,其中辐射敏感涂层包含式(I)的重氮盐:其中R1是阴离子,R2和R3代表任选取代,R4是 -N-和-S-,并且R 5是在曝光后使得重氮盐亲油性和喷剂溶液的残留物不溶解的基团。

    Lithographic plate precursor
    9.
    发明授权
    Lithographic plate precursor 失效
    平版印刷版前体

    公开(公告)号:US06265136B1

    公开(公告)日:2001-07-24

    申请号:US09348212

    申请日:1999-07-08

    IPC分类号: G03F730

    摘要: There is described a method of preparing a lithographic plate which comprises coating on a lithographic support having a hydrophilic surface, a layer of a heat sensitive coating, digitally imaging the coating, then processing the plate with water to remove the unexposed areas of the coating to reveal the hydrophilic surface of the plate and to leave an ink receptive image, wherein the heat sensitive coating comprises a diazo salt of formula (I): wherein R1 is an anion, R2 and R3 represent optional substitution, R4 is —N— or —S— and R5 is a group which, after exposure of the plate, renders the residue of the diazo salt oleophilic and fount solution insoluble.

    摘要翻译: 描述了一种制备平版印刷版的方法,该方法包括在具有亲水表面的光刻支架上涂覆一层热敏涂层,对该涂层进行数字成像,然后用水处理该板以将该涂层的未曝光区域除去 揭示板的亲水表面并留下吸墨图像,其中热敏涂层包含式(I)的重氮盐:其中R1是阴离子,R2和R3代表任选的取代基,R4是-N-或 - S-和R5是在曝光后使得重氮盐的亲油性和喷雾溶液的残留物不溶的基团。