公开(公告)号：US5786744A

公开(公告)日：1998-07-28

申请号：US409197

申请日：1995-03-23

申请人： Tomoyuki Nishio ,  Satoshi Hiyama ,  Mizuho Doi ,  Nobuhiro Fueki ,  Hiroshi Yamakawa

发明人： Tomoyuki Nishio ,  Satoshi Hiyama ,  Mizuho Doi ,  Nobuhiro Fueki ,  Hiroshi Yamakawa

IPC分类号： G01C19/00 ,  G01P15/00 ,  G01P15/08 ,  G01P15/12 ,  G01P15/18 ,  H01C7/00

CPC分类号： G01P15/08 ,  G01P15/008 ,  G01P15/12 ,  G01P15/18 ,  G01P9/00

摘要： A hybrid sensor which is comprised of an acceleration sensor for detecting acceleration based on a temperature distribution of a predetermined gas hermetically enclosed within a fluid-tight space, and an angular velocity sensor for detecting angular velocity based on a deviation of a flow of a predetermined gas. The acceleration sensor and the angular velocity sensor are formed in one piece by the use of semiconductor processing technology in such a manner that the acceleration sensor and the angular velocity sensor are formed on a plurality of semiconductor substrates, and then the plurality of semiconductor substrates are superposed one upon another and united into a laminate.

摘要翻译： 一种混合式传感器，包括：加速度传感器，用于根据气密地封闭在流体密封空间内的预定气体的温度分布来检测加速度;以及角速度传感器，用于根据预定的 加油站。 通过利用半导体处理技术将加速度传感器和角速度传感器形成为一体，使加速度传感器和角速度传感器形成在多个半导体基板上，然后将多个半导体基板 叠加在一起并组合成层压板。

公开(公告)号：US5279162A

公开(公告)日：1994-01-18

申请号：US848693

申请日：1992-03-09

申请人： Katsuhiko Takebe ,  Mizuho Doi ,  Hiroyasu Takehara ,  Satoshi Hiyama ,  Masanobu Urabe

发明人： Katsuhiko Takebe ,  Mizuho Doi ,  Hiroyasu Takehara ,  Satoshi Hiyama ,  Masanobu Urabe

IPC分类号： G01P15/08 ,  G01P15/12 ,  G01L9/00 ,  H01L29/84

CPC分类号： G01P15/123 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0828 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/13091 ,  Y10S73/04

摘要： This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress. The structure of the sensor according to this invention enables the sizes of the sensors not only to be diminished but also to reduce the fabrication costs. When a stress is applied to the FET, the transconductance changes, and the temperature changes, consequently the I-V characteristic changes. An a.c. signal biased by a direct current is supplied to the gate of the FET, and a drain current is detected in an a.c. component and a d.c. component so as to detect a temperature concurrently with a detection of a stress.

摘要翻译： 本发明涉及用于检测诸如加速度，接触压力，空气压力，机械振动等外部物理力的半导体传感器。根据本发明的半导体传感器的特征在于使用高压电性的化合物半导体，例如GaAs 等等。常规地，悬臂式，隔膜式等的传感器由硅制成。 这些现有技术的传感器具有低检测灵敏度，并且它们的特性趋于恶化。 根据本发明的传感器由GaAs制成，其具有高压电性，并且即使在高温下也能保持半导体的良好特性，并且包括形成在GaAs上用于感测应力的场效应晶体管。 FET由恒定电流或恒定电压驱动，以便检测由于应力引起的电特性（例如，阈值特性）的变化。 根据本发明的传感器的结构使得传感器的尺寸不仅可以减小，而且可以降低制造成本。 当FET施加应力时，跨导变化，温度变化，I-V特性变化。 一个 通过直流电流偏置的信号被提供给FET的栅极，并且以直流方式检测漏极电流。 组件和直径 以便与应力的检测同时检测温度。