公开(公告)号：US09054121B2

公开(公告)日：2015-06-09

申请号：US13280075

申请日：2011-10-24

申请人： Ping-Yin Liu ,  Xin-Hua Huang ,  Hsin-Ting Huang ,  Yuan-Chih Hsieh ,  Jung-Huei Peng ,  Lan-Lin Chao ,  Chia-Shiung Tsai ,  Chun-Wen Cheng

发明人： Ping-Yin Liu ,  Xin-Hua Huang ,  Hsin-Ting Huang ,  Yuan-Chih Hsieh ,  Jung-Huei Peng ,  Lan-Lin Chao ,  Chia-Shiung Tsai ,  Chun-Wen Cheng

IPC分类号： H01L21/31 ,  H01L49/02 ,  B81C1/00 ,  H01G5/16

CPC分类号： B81B7/0058 ,  B81B3/0005 ,  B81B3/0021 ,  B81C1/00269 ,  B81C1/00793 ,  B81C2201/053 ,  B81C2203/0109 ,  H01G5/16 ,  H01L28/60

摘要： A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer. The steps of forming the bond layer and the protection layer include in-situ deposition of the bond layer and the protection layer.

摘要翻译： 一种方法包括形成MEMS器件，形成与MEMS器件相邻的接合层，并在接合层上形成保护层。 形成接合层和保护层的步骤包括接合层和保护层的原位沉积。

公开(公告)号：US20110233621A1

公开(公告)日：2011-09-29

申请号：US12729911

申请日：2010-03-23

申请人： Martin Liu ,  Richard Chu ,  Hung-Hua Lin ,  H. T. Huang ,  Jung-Huei Peng ,  Yuan-Chih Hsieh ,  Lan-Lin Chao ,  Chun-Wen Cheng ,  Chia-Shiung Tsai

发明人： Martin Liu ,  Richard Chu ,  Hung-Hua Lin ,  H. T. Huang ,  Jung-Huei Peng ,  Yuan-Chih Hsieh ,  Lan-Lin Chao ,  Chun-Wen Cheng ,  Chia-Shiung Tsai

IPC分类号： H01L27/04 ,  H01L21/77 ,  H01L29/84

CPC分类号： H01L25/162 ,  B81B2207/012 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/187 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a method of bonding a plurality of substrates. In an embodiment, a first substrate includes a first bonding layer. The second substrate includes a second bonding layer. The first bonding layer includes silicon; the second bonding layer includes aluminum. The first substrate and the second substrate are bonded forming a bond region having an interface between the first bonding layer and the second bonding layer. A device having a bonding region between substrates is also provided. The bonding region includes an interface between a layer including silicon and a layer including aluminum.

摘要翻译： 本公开提供了一种接合多个基板的方法。 在一个实施例中，第一衬底包括第一接合层。 第二基板包括第二接合层。 第一接合层包括硅; 第二结合层包括铝。 第一基板和第二基板被接合形成在第一接合层和第二接合层之间具有界面的接合区域。 还提供了一种在衬底之间具有接合区域的器件。 接合区域包括在包括硅的层和包括铝的层之间的界面。

公开(公告)号：US08609466B2

公开(公告)日：2013-12-17

申请号：US12503311

申请日：2009-07-15

申请人： Jung-Huei Peng

发明人： Jung-Huei Peng

IPC分类号： H01L21/50

CPC分类号： B81B7/007 ,  B81B3/0021 ,  B81B7/0064 ,  B81B2207/096 ,  B81C2203/0118

摘要： A cap and substrate having an electrical connection at a wafer level includes providing a substrate and forming an electrically conductive ground structure in the substrate and electrically coupled to the substrate. An electrically conductive path to the ground structure is formed in the substrate. A top cap is then provided, wherein the top cap includes an electrically conductive surface. The top cap is bonded to the substrate so that the electrically conductive surface of the top cap is electrically coupled to the path to the ground structure.

公开(公告)号：US20110014750A1

公开(公告)日：2011-01-20

申请号：US12503311

申请日：2009-07-15

申请人： Jung-Huei Peng

发明人： Jung-Huei Peng

IPC分类号： H01L21/50

CPC分类号： B81B7/007 ,  B81B3/0021 ,  B81B7/0064 ,  B81B2207/096 ,  B81C2203/0118

摘要： A cap and substrate having an electrical connection at a wafer level includes providing a substrate and forming an electrically conductive ground structure in the substrate and electrically coupled to the substrate. An electrically conductive path to the ground structure is formed in the substrate. A top cap is then provided, wherein the top cap includes an electrically conductive surface. The top cap is bonded to the substrate so that the electrically conductive surface of the top cap is electrically coupled to the path to the ground structure.

摘要翻译： 在晶片级具有电连接的盖和衬底包括提供衬底并在衬底中形成导电的接地结构并电耦合到衬底。 在衬底中形成到接地结构的导电路径。 然后提供顶盖，其中顶盖包括导电表面。 顶盖结合到基板上，使得顶盖的导电表面电耦合到接地结构的路径。

公开(公告)号：US08728845B2

公开(公告)日：2014-05-20

申请号：US13071334

申请日：2011-03-24

申请人： Shih-Wei Lin ,  Ping-Yin Liu ,  Lan-Lin Chao ,  Jung-Huei Peng ,  Chia-Shiung Tsai

发明人： Shih-Wei Lin ,  Ping-Yin Liu ,  Lan-Lin Chao ,  Jung-Huei Peng ,  Chia-Shiung Tsai

IPC分类号： H01L21/56

CPC分类号： B81B3/0005 ,  B81C1/00269

摘要： The present disclosure provides various methods for removing an anti-stiction layer. An exemplary method includes forming an anti-stiction layer over a substrate, including over a first substrate region of a first material and a second substrate region of a second material, wherein the second material is different than the first material; and selectively removing the anti-stiction layer from the second substrate region of the second material without using a mask.

摘要翻译： 本公开提供了用于去除抗静电层的各种方法。 一种示例性方法包括在衬底上形成抗静电层，包括在第一材料的第一衬底区域和第二材料的第二衬底区域上，其中第二材料不同于第一材料; 并且不使用掩模，从第二材料的第二基板区域选择性地去除抗静电层。

公开(公告)号：US20120244677A1

公开(公告)日：2012-09-27

申请号：US13071334

申请日：2011-03-24

申请人： Shih-Wei Lin ,  Ping-Yin Liu ,  Lan-Lin Chao ,  Jung-Huei Peng ,  Chia-Shiung Tsai

发明人： Shih-Wei Lin ,  Ping-Yin Liu ,  Lan-Lin Chao ,  Jung-Huei Peng ,  Chia-Shiung Tsai

IPC分类号： H01L21/762

CPC分类号： B81B3/0005 ,  B81C1/00269

摘要： The present disclosure provides various methods for removing an anti-stiction layer. An exemplary method includes forming an anti-stiction layer over a substrate, including over a first substrate region of a first material and a second substrate region of a second material, wherein the second material is different than the first material; and selectively removing the anti-stiction layer from the second substrate region of the second material without using a mask.

摘要翻译： 本公开提供了用于去除抗静电层的各种方法。 一种示例性方法包括在衬底上形成抗静电层，包括在第一材料的第一衬底区域和第二材料的第二衬底区域上，其中第二材料不同于第一材料; 并且不使用掩模，从第二材料的第二基板区域选择性地去除抗静电层。

公开(公告)号：US08232614B1

公开(公告)日：2012-07-31

申请号：US13042733

申请日：2011-03-08

申请人： Chia-Hua Chu ,  Kuei-Sung Chang ,  Chung-Hsien Lin ,  Chia-Ming Hung ,  Jung-Huei Peng ,  Yi Heng Tsai ,  Jiou-Kang Lee

发明人： Chia-Hua Chu ,  Kuei-Sung Chang ,  Chung-Hsien Lin ,  Chia-Ming Hung ,  Jung-Huei Peng ,  Yi Heng Tsai ,  Jiou-Kang Lee

IPC分类号： H01L21/52

CPC分类号： B81B7/007 ,  B81B2207/096

摘要： A package system includes a first substrate structure including at least one first conductive structure that is disposed over a first substrate. A second substrate structure includes a second substrate. The second substrate structure is bonded with the first substrate structure. The at least one first conductive structure is electrically coupled with the second substrate through at least one germanium-containing layer.

摘要翻译： 封装系统包括第一衬底结构，其包括设置在第一衬底上的至少一个第一导电结构。 第二衬底结构包括第二衬底。 第二衬底结构与第一衬底结构结合。 所述至少一个第一导电结构通过至少一个含锗层与所述第二衬底电耦合。