公开(公告)号：US08674495B2

公开(公告)日：2014-03-18

申请号：US13035607

申请日：2011-02-25

申请人： Chia-Pao Shu ,  Chun-Wen Cheng ,  Kuei-Sung Chang ,  Hsin-Ting Huang ,  Shang-Ying Tsai ,  Jung-Huei Peng

发明人： Chia-Pao Shu ,  Chun-Wen Cheng ,  Kuei-Sung Chang ,  Hsin-Ting Huang ,  Shang-Ying Tsai ,  Jung-Huei Peng

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76838 ,  B81C1/00238 ,  B81C1/00269 ,  B81C2203/019 ,  H01L23/49838 ,  H01L23/528 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/0362 ,  H01L2224/04026 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/05617 ,  H01L2224/05638 ,  H01L2224/061 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/26145 ,  H01L2224/29011 ,  H01L2224/29014 ,  H01L2224/29017 ,  H01L2224/2902 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29181 ,  H01L2224/301 ,  H01L2224/32058 ,  H01L2224/321 ,  H01L2224/32106 ,  H01L2224/32148 ,  H01L2224/83203 ,  H01L2224/83365 ,  H01L2224/83805 ,  H01L2225/06527 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/01014 ,  H01L2924/01037 ,  H01L2924/01032 ,  H01L2924/00 ,  H01L2924/0132 ,  H01L2924/00014

摘要： A package system includes a first substrate. A second substrate is electrically coupled with the first substrate. At least one electrical bonding material is disposed between the first substrate and the second substrate. The at least one electrical bonding material includes a eutectic bonding material. The eutectic bonding material includes a metallic material and a semiconductor material. The metallic material is disposed adjacent to a surface of the first substrate. The metallic material includes a first pad and at least one first guard ring around the first pad.

摘要翻译： 封装系统包括第一衬底。 第二衬底与第一衬底电耦合。 至少一个电接合材料设置在第一基板和第二基板之间。 所述至少一个电接合材料包括共晶接合材料。 共晶接合材料包括金属材料和半导体材料。 金属材料邻近第一基底的表面设置。 金属材料包括第一焊盘和围绕第一焊盘的至少一个第一保护环。

公开(公告)号：US08609466B2

公开(公告)日：2013-12-17

申请号：US12503311

申请日：2009-07-15

申请人： Jung-Huei Peng

发明人： Jung-Huei Peng

IPC分类号： H01L21/50

CPC分类号： B81B7/007 ,  B81B3/0021 ,  B81B7/0064 ,  B81B2207/096 ,  B81C2203/0118

摘要： A cap and substrate having an electrical connection at a wafer level includes providing a substrate and forming an electrically conductive ground structure in the substrate and electrically coupled to the substrate. An electrically conductive path to the ground structure is formed in the substrate. A top cap is then provided, wherein the top cap includes an electrically conductive surface. The top cap is bonded to the substrate so that the electrically conductive surface of the top cap is electrically coupled to the path to the ground structure.

公开(公告)号：US20130099355A1

公开(公告)日：2013-04-25

申请号：US13280075

申请日：2011-10-24

申请人： Ping-Yin Liu ,  Xin-Hua Huang ,  Hsin-Ting Huang ,  Yuan-Chih Hsieh ,  Jung-Huei Peng ,  Lan-Lin Chao ,  Chia-Shiung Tsai ,  Chun-Wen Cheng

发明人： Ping-Yin Liu ,  Xin-Hua Huang ,  Hsin-Ting Huang ,  Yuan-Chih Hsieh ,  Jung-Huei Peng ,  Lan-Lin Chao ,  Chia-Shiung Tsai ,  Chun-Wen Cheng

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： B81B7/0058 ,  B81B3/0005 ,  B81B3/0021 ,  B81C1/00269 ,  B81C1/00793 ,  B81C2201/053 ,  B81C2203/0109 ,  H01G5/16 ,  H01L28/60

摘要： A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer. The steps of forming the bond layer and the protection layer include in-situ deposition of the bond layer and the protection layer

公开(公告)号：US07998775B2

公开(公告)日：2011-08-16

申请号：US12619542

申请日：2009-11-16

申请人： Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Ting-Hau Wu

发明人： Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Ting-Hau Wu

IPC分类号： H01L21/30

CPC分类号： B81C1/00595

摘要： When a native oxide grows on a polysilicon member of, e.g., a MEMS device, delamination between the polysilicon member and subsequently formed layers may occur because the native oxide is undercut during removal of sacrificial oxide layers. Nitriding the native oxide increases the etch selectivity relative the sacrificial oxide layers. Undercutting and delamination is hence reduced or eliminated altogether.

摘要翻译： 当天然氧化物在例如MEMS器件的多晶硅构件上生长时，可能会发生多晶硅构件和随后形成的层之间的分层，因为在去除牺牲氧化物层期间天然氧化物被切削。 氮化自然氧化物相对于牺牲氧化物层增加蚀刻选择性。 因此，底切和分层完全减少或消除。

公开(公告)号：US20110014750A1

公开(公告)日：2011-01-20

申请号：US12503311

申请日：2009-07-15

申请人： Jung-Huei Peng

发明人： Jung-Huei Peng

IPC分类号： H01L21/50

CPC分类号： B81B7/007 ,  B81B3/0021 ,  B81B7/0064 ,  B81B2207/096 ,  B81C2203/0118

摘要： A cap and substrate having an electrical connection at a wafer level includes providing a substrate and forming an electrically conductive ground structure in the substrate and electrically coupled to the substrate. An electrically conductive path to the ground structure is formed in the substrate. A top cap is then provided, wherein the top cap includes an electrically conductive surface. The top cap is bonded to the substrate so that the electrically conductive surface of the top cap is electrically coupled to the path to the ground structure.

摘要翻译： 在晶片级具有电连接的盖和衬底包括提供衬底并在衬底中形成导电的接地结构并电耦合到衬底。 在衬底中形成到接地结构的导电路径。 然后提供顶盖，其中顶盖包括导电表面。 顶盖结合到基板上，使得顶盖的导电表面电耦合到接地结构的路径。

公开(公告)号：US20100117168A1

公开(公告)日：2010-05-13

申请号：US12347046

申请日：2008-12-31

申请人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

发明人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

IPC分类号： H01L29/84

CPC分类号： H04R19/005 ,  H04R19/04 ,  H04R2201/003

摘要： An integrated circuit structure includes a capacitor, which further includes a first capacitor plate formed of polysilicon, and a second capacitor plate substantially encircling the first capacitor plate. The first capacitor plate has a portion configured to vibrate in response to an acoustic wave. The second capacitor plate is fixed and has slanted edges facing the first capacitor plate.

摘要翻译： 集成电路结构包括电容器，其还包括由多晶硅形成的第一电容器板和基本上环绕第一电容器板的第二电容器板。 第一电容器板具有被配置为响应于声波而振动的部分。 第二电容器板是固定的并且具有面向第一电容器板的倾斜边缘。

公开(公告)号：US08776600B2

公开(公告)日：2014-07-15

申请号：US13610178

申请日：2012-09-11

申请人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai

发明人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai

IPC分类号： G01C19/00

CPC分类号： G01C19/56 ,  Y10T29/49002

摘要： A gyroscope sensor includes a gyro disk. A first light source is configured to provide a first light beam. A first light receiver is configured to receive the first light beam for sensing a vibration at a first direction of the gyro disk. A second light source is configured to provide a second light beam substantially parallel with the first light beam. A second light receiver is configured to receive the second light beam for sensing a vibration in a second direction of the gyro disk. The second direction is different from the first direction.

摘要翻译： 陀螺传感器包括陀螺盘。 第一光源被配置为提供第一光束。 第一光接收器被配置为接收用于感测陀螺盘的第一方向上的振动的第一光束。 第二光源被配置为提供基本上与第一光束平行的第二光束。 第二光接收器被配置为接收用于感测陀螺盘的第二方向上的振动的第二光束。 第二个方向与第一个方向不同。

公开(公告)号：US08686571B2

公开(公告)日：2014-04-01

申请号：US13571260

申请日：2012-08-09

申请人： Hsin-Ting Huang ,  Jung-Huei Peng ,  Shang-Ying Tsai ,  Li-Min Hung ,  Yao-Te Huang ,  Yi-Chuan Teng ,  Chin-Yi Cho

发明人： Hsin-Ting Huang ,  Jung-Huei Peng ,  Shang-Ying Tsai ,  Li-Min Hung ,  Yao-Te Huang ,  Yi-Chuan Teng ,  Chin-Yi Cho

IPC分类号： H01L33/00 ,  H01L23/48

CPC分类号： H01L24/32 ,  H01L23/48 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27622 ,  H01L2224/29007 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2224/83951 ,  H01L2924/01322 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/01032 ,  H01L2924/01029 ,  H01L2924/00

摘要： A structure comprises a first semiconductor substrate, a first bonding layer deposited on a bonding side the first semiconductor substrate, a second semiconductor substrate stacked on top of the first semiconductor substrate and a second bonding layer deposited on a bonding side of the second semiconductor substrate, wherein the first bonding layer is of a horizontal length greater than a horizontal length of the second semiconductor substrate, and wherein there is a gap between an edge of the second bonding layer and a corresponding edge of the second semiconductor substrate.

摘要翻译： 一种结构包括第一半导体衬底，沉积在第一半导体衬底的接合侧上的第一接合层，堆叠在第一半导体衬底的顶部上的第二半导体衬底和沉积在第二半导体衬底的接合侧上的第二接合层， 其中所述第一接合层的水平长度大于所述第二半导体衬底的水平长度，并且其中在所述第二接合层的边缘和所述第二半导体衬底的对应边缘之间存在间隙。

公开(公告)号：US08377798B2

公开(公告)日：2013-02-19

申请号：US12943281

申请日：2010-11-10

申请人： Jung-Huei Peng ,  Hsin-Ting Huang ,  Yao-Te Huang ,  Shang-Ying Tsai ,  Ping-Yin Liu

发明人： Jung-Huei Peng ,  Hsin-Ting Huang ,  Yao-Te Huang ,  Shang-Ying Tsai ,  Ping-Yin Liu

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/311

CPC分类号： H01L25/0657 ,  B81C1/00269 ,  B81C2203/019 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/2746 ,  H01L2224/2782 ,  H01L2224/2783 ,  H01L2224/27831 ,  H01L2224/2784 ,  H01L2224/27848 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29611 ,  H01L2224/29617 ,  H01L2224/29644 ,  H01L2224/29647 ,  H01L2224/29655 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/3207 ,  H01L2224/32148 ,  H01L2224/32505 ,  H01L2224/83011 ,  H01L2224/83012 ,  H01L2224/83014 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01013 ,  H01L2224/83

摘要： A method for wafer to wafer bonding in semiconductor packaging provides for roughening the bonding surfaces in one embodiment. Also provided is a method for passivating the bonding surfaces with a lower melting point material that becomes forced away from the bonding interface during bonding. Also provided is a method for forming an eutectic at the bonding interface to reduce the impact of any native oxide formation at the bonding interface.

摘要翻译： 在一个实施例中，用于半导体封装中的晶片到晶片结合的方法提供了使结合表面粗糙化的方法。 还提供了一种用于在接合期间被迫离开接合界面的较低熔点材料钝化接合表面的方法。 还提供了在键合界面处形成共晶的方法，以减少接合界面处的任何自然氧化物形成的影响。

公开(公告)号：US08237263B2

公开(公告)日：2012-08-07

申请号：US12651002

申请日：2009-12-31

申请人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Chun-Wen Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai ,  Te-Hsi Lee

发明人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Chun-Wen Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai ,  Te-Hsi Lee

IPC分类号： H01L23/34

CPC分类号： H01L23/427 ,  B81B7/0093 ,  B81B2207/99 ,  F28D15/02 ,  F28F3/048 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit, a method of operating the integrated circuit, and a method of fabricating the integrated circuit are disclosed. According to one of the broader forms of the invention, a method and apparatus involve an integrated circuit that includes a heat transfer structure having a chamber that has a fluid disposed therein and that extends between a heat generating portion and a heat absorbing portion. Heat is absorbed into the fluid from the heat generating portion, and the fluid changes from a first phase to a second phase different from the first phase when the heat is absorbed. Heat is released from the fluid to the heat absorbing portion, and the fluid changes from the second phase to the first phase when the heat is released.

摘要翻译： 公开了集成电路，操作集成电路的方法以及制造集成电路的方法。 根据本发明的一个更广泛的形式，一种方法和装置包括集成电路，该集成电路包括一个传热结构，该传热结构具有一个具有设置在其中的流体并且在发热部分和吸热部分之间延伸的腔室。 热量从发热部分吸收到流体中，并且当热被吸收时，流体从第一相位变化到与第一相位不同的第二相位。 热量从流体释放到吸热部分，并且当释放热量时，流体从第二相变为第一相。