公开(公告)号：US20180329242A1

公开(公告)日：2018-11-15

申请号：US15776415

申请日：2017-02-17

Applicant: Sharp Kabushiki Kaisha

Inventor： Hideki KITAGAWA ,  Tohru DAITOH ,  Hajime IMAI ,  Toshikatsu ITOH ,  Hisao OCHI ,  Tetsuo KIKUCHI ,  Masahiko SUZUKI ,  Teruyuki UEDA ,  Ryosuke GUNJI ,  Kengo HARA ,  Setsuji NISHIMIYA

IPC: G02F1/1362 ,  G02F1/1343 ,  G02F1/1339 ,  G02F1/1333 ,  H01L27/12

CPC classification number: G02F1/1362 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1368 ,  G02F2201/123 ,  H01L27/1214

Abstract: A spacer is fixed while an effect on a surface of an active matrix substrate is prevented. An active matrix substrate (1) includes a thin film transistor (11) which is provided on a substrate (2) and which has a recess made at a surface of the thin film transistor, and a spacer (13) fitted in the recess.