公开(公告)号：US20110069417A1

公开(公告)日：2011-03-24

申请号：US12585677

申请日：2009-09-22

申请人： Keita Kawamori ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita

发明人： Keita Kawamori ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3912 ,  G11B2005/3996

摘要： An MR element in a CPP structure includes an MR part configured with a nonmagnetic layer, a first ferromagnetic layer that functions as first free layer and a second ferromagnetic layer that functions as a second free layer, and first and second ferromagnetic layers are laminated to sandwich the nonmagnetic intermediate layer, and a sense current flows in a lamination direction of the MR part, an orthogonalizing bias function part, which influences a substantial orthogonalization function for magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer, is formed on the rear side the MR part, side shield layers are disposed on both sides in the width direction of the MR part, the side shield layers are perpendicular magnetized layers with a magnetic shield function, and magnetization directions of the perpendicular magnetized layers are in an orthogonal direction that corresponds to the thickness direction.

摘要翻译： CPP结构中的MR元件包括配置有非磁性层的MR部件，用作第一自由层的第一铁磁层和用作第二自由层的第二铁磁层，并且第一和第二铁磁层被层压以夹持 非磁性中间层和感测电流沿MR部分的层叠方向流动，影响第一铁磁层和第二铁磁层的磁化方向的实质正交函数的正交偏置功能部分形成在后部 侧面屏蔽层设置在MR部分的宽度方向的两侧，侧面屏蔽层是具有磁屏蔽功能的垂直磁化层，并且垂直磁化层的磁化方向处于垂直磁化层的正交方向， 对应于厚度方向。

公开(公告)号：US07869166B2

公开(公告)日：2011-01-11

申请号：US11676961

申请日：2007-02-20

申请人： Daisuke Miyauchi ,  Shinji Hara ,  Takahiko Machita

发明人： Daisuke Miyauchi ,  Shinji Hara ,  Takahiko Machita

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A thin film magnetic head has: a spin valve having a pinned layer whose having a fixed magnetization direction, a first nonmagnetic intermediate layer disposed on the pinned layer, and a free layer having a variable magnetization direction, the free layer disposed on the first nonmagnetic intermediate layer; and bias magnetic layers for applying a bias magnetic field to the free layer provided on both sides of the spin valve. The pinned layer has a hard magnetic layer, a second nonmagnetic intermediate layer disposed on the hard magnetic layer, and a ferromagnetic layer disposed on the second nonmagnetic intermediate layer. The bias magnetic layer has a bias antiferromagnetic layer, and a bias ferromagnetic layer disposed on the bias antiferromagnetic layer. A height direction dimension of the pinned layer is longer than a track width direction dimension, and longer than a height direction dimension of the free layer.

摘要翻译： 薄膜磁头具有：具有固定磁化方向的钉扎层的自旋阀，设置在被钉扎层上的第一非磁性中间层和具有可变磁化方向的自由层，所述自由层设置在第一非磁性 中间层 并且偏置用于向设置在自旋阀两侧的自由层施加偏置磁场的磁性层。 钉扎层具有硬磁性层，设置在硬磁性层上的第二非磁性中间层和设置在第二非磁性中间层上的铁磁层。 偏置磁性层具有偏置反铁磁层，偏置铁磁层设置在偏置反铁磁层上。 被钉扎层的高度方向尺寸长于轨道宽度方向尺寸，并且长于自由层的高度方向尺寸。

公开(公告)号：US08130475B2

公开(公告)日：2012-03-06

申请号：US12588559

申请日：2009-10-20

申请人： Keita Kawamori ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita

发明人： Keita Kawamori ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita

IPC分类号： G11B5/127 ,  G11B5/33 ,  B32B37/02

CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/02 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/398 ,  Y10T156/1043 ,  Y10T428/11

摘要： The present invention relates to a method of manufacturing a DFL type thin film magnetic head. The method includes laminating each of the layers from the lower magnetization control layer to the upper exchange coupling layer above the substrate; laminating an auxiliary magnetization control layer including at least a CoZrTa layer above the upper exchange coupling layer; forming at least each of the layers from the lower exchange coupling layer to the auxiliary magnetization control layer in pillar shape, and disposing the bias magnetic field application layer at an opposite position with respect to the ABS of each of the pillar shaped layers; trimming the auxiliary magnetization control layer by removing a part of the auxiliary magnetization control layer that is formed in the pillar shape, and disposing the upper shield layer such that the trimmed auxiliary magnetization control layer is at least covered.

摘要翻译： 本发明涉及一种制造DFL型薄膜磁头的方法。 该方法包括将来自下部磁化控制层的每个层层压到衬底上方的上部交换耦合层; 层叠在所述上交换耦合层上方至少包含CoZrTa层的辅助磁化控制层; 从所述下交换耦合层至所述辅助磁化控制层至少形成每个所述层，并将所述偏磁场施加层设置在相对于每个所述柱状层的ABS的相对位置; 通过去除形成在柱状的辅助磁化控制层的一部分来修整辅助磁化控制层，并且设置上部屏蔽层，使得修整的辅助磁化控制层至少被覆盖。

公开(公告)号：US20110091744A1

公开(公告)日：2011-04-21

申请号：US12588559

申请日：2009-10-20

申请人： Keita Kawamori ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita

发明人： Keita Kawamori ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita

IPC分类号： G11B5/33 ,  B32B37/02

CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/02 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/398 ,  Y10T156/1043 ,  Y10T428/11

摘要： The present invention relates to a method of manufacturing a DFL type thin film magnetic head. The method includes laminating each of the layers from the lower magnetization control layer to the upper exchange coupling layer above the substrate; laminating an auxiliary magnetization control layer including at least a CoZrTa layer above the upper exchange coupling layer; forming at least each of the layers from the lower exchange coupling layer to the auxiliary magnetization control layer in pillar shape, and disposing the bias magnetic field application layer at an opposite position with respect to the ABS of each of the pillar shaped layers; trimming the auxiliary magnetization control layer by removing a part of the auxiliary magnetization control layer that is formed in the pillar shape, and disposing the upper shield layer such that the trimmed auxiliary magnetization control layer is at least covered.

摘要翻译： 本发明涉及一种制造DFL型薄膜磁头的方法。 该方法包括将来自下部磁化控制层的每个层层压到衬底上方的上部交换耦合层; 层叠在所述上交换耦合层上方至少包含CoZrTa层的辅助磁化控制层; 从所述下交换耦合层至所述辅助磁化控制层至少形成各层，并将所述偏磁场施加层设置在相对于所述柱状层的每一个的ABS的相反位置; 通过去除形成在柱状的辅助磁化控制层的一部分来修整辅助磁化控制层，并且设置上部屏蔽层，使得修整的辅助磁化控制层至少被覆盖。

公开(公告)号：US07558027B2

公开(公告)日：2009-07-07

申请号：US11411107

申请日：2006-04-26

申请人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/127

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

摘要： A magnetic field sensor comprises: a magnetic field detecting element that detects magnitude of an external magnetic field based on electric resistance of the magnetic field detecting element to sense current, the electric resistance being varied in accordance with the external magnetic field; an upper shield layer that is formed to cover the magnetic field detecting element; and a protective layer that is formed above the upper shield layer with respect to a direction of stacking. The upper shield layer includes a first portion at least part of which covers a top surface of the magnetic field detecting element, and a second portion that covers the first portion, and, the first portion has a larger absolute value of magnetostriction than the second portion.

摘要翻译： 磁场传感器包括：磁场检测元件，其基于磁场检测元件的电阻来检测外部磁场的大小以感测电流，电阻根据外部磁场而变化; 形成为覆盖所述磁场检测元件的上屏蔽层; 以及相对于堆叠方向形成在上屏蔽层上方的保护层。 上屏蔽层包括其至少一部分覆盖磁场检测元件的顶表面的第一部分和覆盖第一部分的第二部分，并且第一部分具有比第二部分更大的磁致伸缩绝对值 。

公开(公告)号：US20050213261A1

公开(公告)日：2005-09-29

申请号：US11073385

申请日：2005-03-07

申请人： Takahiko Machita ,  Koji Shimazawa

发明人： Takahiko Machita ,  Koji Shimazawa

IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39

CPC分类号： B82Y10/00 ,  G11B5/3903

摘要： A read head comprises: a bottom shield layer; a top shield layer; an MR element disposed between the bottom shield layer and the top shield layer; a bottom shield gap film disposed between the bottom shield layer and the MR element; and a top shield gap film disposed between the top shield layer and the MR element. The MR element has a first end closer to the air bearing surface and a second end opposite to the first end. An adjacent layer made of a metal material is adjacent to the second end with an insulating film disposed in between. The material making up the adjacent layer has a linear thermal expansion coefficient whose absolute value is 6×10−6/° C. or smaller at a temperature of 30° C., and preferably 1×10−6/° C. or smaller.

摘要翻译： 读头包括：底屏蔽层; 顶层屏蔽层; 设置在所述底部屏蔽层和所述顶部屏蔽层之间的MR元件; 设置在所述底部屏蔽层和所述MR元件之间的底部屏蔽间隙膜; 以及设置在顶部屏蔽层和MR元件之间的顶部屏蔽间隙膜。 MR元件具有靠近空气轴承表面的第一端和与第一端相对的第二端。 由金属材料制成的相邻层与第二端相邻，其间设置有绝缘膜。 构成相邻层的材料的线性热膨胀系数在30℃的温度下绝对值为6×10 -6 /℃以下，优选为1×10 -6 /℃或更小。

公开(公告)号：US07948718B2

公开(公告)日：2011-05-24

申请号：US11078580

申请日：2005-03-14

申请人： Takahiko Machita ,  Koji Shimazawa

发明人： Takahiko Machita ,  Koji Shimazawa

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/399 ,  G11B2005/3996

摘要： An MR element incorporates: a nonmagnetic conductive layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the free layer changes in response to an external magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the pinned layer is fixed to the direction orthogonal to the air bearing surface. The MR element does not include any layer provided for fixing the direction of magnetization in the pinned layer. The pinned layer incorporates a ferromagnetic layer made of a ferromagnetic material having a positive magnetostriction constant. A bottom shield gap film and a top shield gap film disposed adjacent to the MR element each have a compressive stress of 600 MPa or greater.

摘要翻译： MR元件包括：具有朝向相反方向的两个表面的非磁性导电层; 邻近所述非磁性导电层的一个表面设置的自由层，其中所述自由层中的磁化方向响应于外部磁场而改变; 以及与非磁性导电层的另一个表面相邻设置的被钉扎层，其中被钉扎层中的磁化方向固定在与空气支承表面正交的方向上。 MR元件不包括用于固定钉扎层中的磁化方向的任何层。 钉扎层包含由具有正磁致伸缩常数的铁磁材料制成的铁磁层。 邻近MR元件设置的底部屏蔽间隙膜和顶部屏蔽间隙膜各自具有600MPa或更大的压缩应力。

公开(公告)号：US20050219766A1

公开(公告)日：2005-10-06

申请号：US11078580

申请日：2005-03-14

申请人： Takahiko Machita ,  Koji Shimazawa

发明人： Takahiko Machita ,  Koji Shimazawa

IPC分类号： G11B5/39 ,  G11B5/127 ,  G11B5/33 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/399 ,  G11B2005/3996

摘要： An MR element incorporates: a nonmagnetic conductive layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the free layer changes in response to an external magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the pinned layer is fixed to the direction orthogonal to the air bearing surface. The MR element does not include any layer provided for fixing the direction of magnetization in the pinned layer. The pinned layer incorporates a ferromagnetic layer made of a ferromagnetic material having a positive magnetostriction constant. A bottom shield gap film and a top shield gap film disposed adjacent to the MR element each have a compressive stress of 600 MPa or greater.

摘要翻译： MR元件包括：具有朝向相反方向的两个表面的非磁性导电层; 邻近所述非磁性导电层的一个表面设置的自由层，其中所述自由层中的磁化方向响应于外部磁场而改变; 以及与非磁性导电层的另一个表面相邻设置的被钉扎层，其中被钉扎层中的磁化方向固定在与空气支承表面正交的方向上。 MR元件不包括用于固定钉扎层中的磁化方向的任何层。 钉扎层包含由具有正磁致伸缩常数的铁磁材料制成的铁磁层。 邻近MR元件设置的底部屏蔽间隙膜和顶部屏蔽间隙膜各自具有600MPa或更大的压缩应力。

公开(公告)号：US20070109691A1

公开(公告)日：2007-05-17

申请号：US11482090

申请日：2006-07-07

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3912 ,  G11B2005/3996

摘要： A thin-film magnetic head comprises: a magnetoresistive element: first and second read shield layers disposed to sandwich the magnetoresistive element; and bias field applying layers for applying a bias magnetic field to the magnetoresistive element. Each of the first and second read shield layers has: a first end face located in a medium facing surface; a second end face opposite to the first end face; a first width changing portion that continuously decreases in width as the distance from the first end face decreases; and a second width changing portion that continuously decreases in width as the distance from the second end face decreases.

摘要翻译： 薄膜磁头包括：磁阻元件：设置成夹着磁阻元件的第一和第二读屏蔽层; 以及用于向磁阻元件施加偏置磁场的偏置场施加层。 第一和第二读取屏蔽层中的每一个具有：位于介质面对表面中的第一端面; 与第一端面相对的第二端面; 第一宽度改变部分，随着距离第一端面的距离减小，其宽度连续减小; 以及随着与第二端面的距离的减小，宽度连续减小的第二宽度改变部分。

公开(公告)号：US07583478B2

公开(公告)日：2009-09-01

申请号：US11482090

申请日：2006-07-07

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3912 ,  G11B2005/3996

摘要： A thin-film magnetic head comprises: a magnetoresistive element: first and second read shield layers disposed to sandwich the magnetoresistive element; and bias field applying layers for applying a bias magnetic field to the magnetoresistive element. Each of the first and second read shield layers has: a first end face located in a medium facing surface; a second end face opposite to the first end face; a first width changing portion that continuously decreases in width as the distance from the first end face decreases; and a second width changing portion that continuously decreases in width as the distance from the second end face decreases.

摘要翻译： 薄膜磁头包括：磁阻元件：设置成夹着磁阻元件的第一和第二读屏蔽层; 以及用于向磁阻元件施加偏置磁场的偏置场施加层。 第一和第二读取屏蔽层中的每一个具有：位于介质面对表面中的第一端面; 与第一端面相对的第二端面; 第一宽度改变部分，随着距离第一端面的距离减小，其宽度连续减小; 以及随着与第二端面的距离的减小，宽度连续减小的第二宽度改变部分。