摘要:
A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.
摘要:
A disk array device that can detect the successful completion of data overwrite/update at high speed only by checking a UDT is provided. When a DIF is used as a verification code appended to data, check information that detects the successful completion of overwrite is defined in the UDT, in addition to address information that detects positional errors. Upon request of overwrite/update of data stored in a cache, a check bit of the data in the cache is changed to a value different from a check bit to be appended to new data by a host adapter. Then, data transfer is initiated. Upon completion of the data overwrite, the check bit is changed back to the original value, whereby it is possible to detect the successful completion of overwrite/update (FIG. 8).
摘要:
A plurality of CPU cores each have control rights for logical storage areas of one or more types among logical storage areas of a plurality of types. As a source for an area to be assigned to the logical storage areas, a physical storage area which is common to the logical storage areas of the plurality of types is managed. Each CPU core, in the case of a data access to a logical storage area corresponding to the control rights of the CPU core, assigns an area required to store the data from the common physical storage area.
摘要:
A first controller has a first CM area having a plurality of first sub-areas, and a second controller has a second CM area having a plurality of second sub-areas. The first controller stores first data in any of the first sub-areas, and in addition, stores a mirror of the first data (first mirror data) in any of the second sub-areas. The first controller manages a pair (an association relationship) of the storage-destination first sub-area of the first data and the storage-destination second sub-area of the first mirror data. Similarly, the second controller stores second data in any of the second sub-areas, and in addition, stores a mirror of the second data (second mirror data) in any of the first sub-areas. The second controller manages a pair (an association relationship) of the storage-destination second sub-area of the second data and the storage-destination first sub-area of the second mirror data.
摘要:
When updating the data in each generation's logical units, the snapshot processing unit writes the update data in accordance with the update as forward differential data 221 to the base volume, and saves the old data that existed in the base volume before that update data was written as backward differential data in the backward differential data pool, and, when each generation's logical unit backward differential data is updated, deletes the forward differential data belonging the production LUs and the snapshots that together with those production LUs form the forward differential group. As a result of this, the amount of metadata necessary for executing a host command is able to be reduced in production LUs utilizing snapshots using the forward differential method.
摘要:
Maintenance storage system by storage system is enabled, and the removal or replacement of a storage system is enabled while continuing the operation of a system.In a computer system including a first storage system having a plurality of first storage devices and a second storage system having a plurality of second storage devices, when the number of the first storage devices under normal operation in the first storage system is equal to or smaller than a predetermined threshold, and data stored in the first storage devices under normal operation can be migrated to the second storage devices, the data stored in the first storage devices under normal operation are duplicated to the second storage devices, and information indicating that the first storage system can be removed from the computer system is output.
摘要:
Maintenance storage system by storage system is enabled, and the removal or replacement of a storage system is enabled while continuing the operation of a system.In a computer system including a first storage system having a plurality of first storage devices and a second storage system having a plurality of second storage devices, when the number of the first storage devices under normal operation in the first storage system is equal to or smaller than a predetermined threshold, and data stored in the first storage devices under normal operation can be migrated to the second storage devices, the data stored in the first storage devices under normal operation are duplicated to the second storage devices, and information indicating that the first storage system can be removed from the computer system is output.
摘要:
A migration controller 4C creates, inside a migration-destination storage controller 2, a migration-destination volume 7A, a migration-destination snapshot volume 7B and a pool 7C corresponding to a migration-source volume 5A, a migration-source snapshot volume 5B, and a pool 5C, respectively. The migration controller 4C reproduces an update history of a migration-targeted generation as a write process of difference data to the migration-destination volume 7A. The migration-destination storage controller 2 constructs the migration-destination snapshot volume 7B in accordance with the update of the migration-destination volume 7A.
摘要:
A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel FET has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel FET to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel FET. The tensile stress in the flow direction of the drain current in the channel forming region of the n channel FET is greater than a tensile stress in the direction of flow of a drain current in the channel forming region of the p channel FET.
摘要:
A first storage system that has a first storage device comprises a first interface device that is connected to a second interface device that a second storage system has. A first controller of the first storage system reads system information elements of first system information (information relating to the constitution and control of the first storage system) from a first system area (a storage area that is not provided for the host of the first storage device) and transfers the system information elements or modified system information elements to the second storage system via the first interface device. The system information elements are recorded in a second system area in a second storage device that the second storage system has.