SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    41.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号:US20120112184A1

    公开(公告)日:2012-05-10

    申请号:US13285385

    申请日:2011-10-31

    IPC分类号: H01L29/786

    摘要: A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.

    摘要翻译: 提供具有新颖结构的半导体器件或半导体器件的制造方法。 例如,提高了以高电压或大电流驱动的晶体管的可靠性。 为了提高晶体管的可靠性,在漏电极层(或源极电极层)和氧化物半导体层之间设置缓冲层,使得缓冲层的端部超出漏电极层的侧面 (或源电极层),从而缓冲层能够缓和电场的集中。 缓冲层是包含多个层的单层或层叠层,例如包含氮的In-Ga-Zn-O膜,含有氮的In-Sn-O膜,In-Sn-O系膜, O膜等。

    STORAGE SYSTEM, CONTROL METHOD THEREFOR, AND PROGRAM
    42.
    发明申请
    STORAGE SYSTEM, CONTROL METHOD THEREFOR, AND PROGRAM 失效
    存储系统,其控制方法和程序

    公开(公告)号:US20110289280A1

    公开(公告)日:2011-11-24

    申请号:US12527653

    申请日:2009-05-27

    IPC分类号: G06F12/00

    CPC分类号: G06F11/1076 G06F2211/104

    摘要: A disk array device that can detect the successful completion of data overwrite/update at high speed only by checking a UDT is provided. When a DIF is used as a verification code appended to data, check information that detects the successful completion of overwrite is defined in the UDT, in addition to address information that detects positional errors. Upon request of overwrite/update of data stored in a cache, a check bit of the data in the cache is changed to a value different from a check bit to be appended to new data by a host adapter. Then, data transfer is initiated. Upon completion of the data overwrite, the check bit is changed back to the original value, whereby it is possible to detect the successful completion of overwrite/update (FIG. 8).

    摘要翻译: 提供了一种仅通过检查UDT可以高速检测成功完成数据覆盖/更新的磁盘阵列设备。 当使用DIF作为附加到数据的验证码时,除了检测位置错误的地址信息之外,在UDT中定义检测覆盖成功完成的检查信息。 当请求覆盖/更新存储在高速缓存中的数据时,高速缓存中的数据的校验位被改变为与通过主机适配器附加到新数据的校验位不同的值。 然后,启动数据传输。 在完成数据重写时,校验位被改回到原始值,由此可以检测到覆盖/更新的成功完成(图8)。

    STORAGE CONTROLLER FOR MIRRORING DATA WRITTEN TO CACHE MEMORY AREA
    44.
    发明申请
    STORAGE CONTROLLER FOR MIRRORING DATA WRITTEN TO CACHE MEMORY AREA 有权
    用于记录数据的存储控制器,用于记录缓存记忆区域

    公开(公告)号:US20110231369A1

    公开(公告)日:2011-09-22

    申请号:US12664746

    申请日:2009-10-20

    IPC分类号: G06F17/30

    摘要: A first controller has a first CM area having a plurality of first sub-areas, and a second controller has a second CM area having a plurality of second sub-areas. The first controller stores first data in any of the first sub-areas, and in addition, stores a mirror of the first data (first mirror data) in any of the second sub-areas. The first controller manages a pair (an association relationship) of the storage-destination first sub-area of the first data and the storage-destination second sub-area of the first mirror data. Similarly, the second controller stores second data in any of the second sub-areas, and in addition, stores a mirror of the second data (second mirror data) in any of the first sub-areas. The second controller manages a pair (an association relationship) of the storage-destination second sub-area of the second data and the storage-destination first sub-area of the second mirror data.

    摘要翻译: 第一控制器具有具有多个第一子区域的第一CM区域,并且第二控制器具有具有多个第二子区域的第二CM区域。 第一控制器将第一数据存储在任何第一子区域中,并且还将第一数据(第一镜像数据)的镜像存储在任何第二子区域中。 第一控制器管理第一数据的存储目的地第一子区域和第一镜像数据的存储目的地第二子区域的对(关联关系)。 类似地,第二控制器将第二数据存储在任何第二子区域中,并且另外存储第二数据(第二镜像数据)的镜像在任何第一子区域中。 第二控制器管理第二数据的存储目的地第二子区域和第二镜像数据的存储目的地第一子区域的一对(关联关系)。

    Storage system and control method for the same
    45.
    发明申请
    Storage system and control method for the same 有权
    存储系统和控制方法相同

    公开(公告)号:US20110137867A1

    公开(公告)日:2011-06-09

    申请号:US12311519

    申请日:2009-02-23

    申请人: Yusuke Nonaka

    发明人: Yusuke Nonaka

    IPC分类号: G06F17/30

    摘要: When updating the data in each generation's logical units, the snapshot processing unit writes the update data in accordance with the update as forward differential data 221 to the base volume, and saves the old data that existed in the base volume before that update data was written as backward differential data in the backward differential data pool, and, when each generation's logical unit backward differential data is updated, deletes the forward differential data belonging the production LUs and the snapshots that together with those production LUs form the forward differential group. As a result of this, the amount of metadata necessary for executing a host command is able to be reduced in production LUs utilizing snapshots using the forward differential method.

    摘要翻译: 当更新每一代逻辑单元中的数据时,快照处理单元将根据更新的更新数据作为前向差分数据221写入基本卷,并且在写入更新数据之前保存存在于基本卷中的旧数据 作为后向差分数据池中的后向差分数据,并且当每一代的逻辑单元向后差分数据被更新时,删除属于生成LU的正向差分数据和与那些生成LU一起形成正向差分组的快照。 作为其结果,使用前向差分方法利用快照能够减少执行主机命令所需的元数据量。

    Computer system, storage system and configuration management method
    46.
    发明授权
    Computer system, storage system and configuration management method 有权
    计算机系统,存储系统和配置管理方法

    公开(公告)号:US07873866B2

    公开(公告)日:2011-01-18

    申请号:US12255297

    申请日:2008-10-21

    IPC分类号: G06F11/00

    摘要: Maintenance storage system by storage system is enabled, and the removal or replacement of a storage system is enabled while continuing the operation of a system.In a computer system including a first storage system having a plurality of first storage devices and a second storage system having a plurality of second storage devices, when the number of the first storage devices under normal operation in the first storage system is equal to or smaller than a predetermined threshold, and data stored in the first storage devices under normal operation can be migrated to the second storage devices, the data stored in the first storage devices under normal operation are duplicated to the second storage devices, and information indicating that the first storage system can be removed from the computer system is output.

    摘要翻译: 启用存储系统的维护存储系统,并且在继续操作系统的同时启用存储系统的删除或更换。 在包括具有多个第一存储装置的第一存储系统和具有多个第二存储装置的第二存储系统的计算机系统中,当在第一存储系统中正常操作的第一存储装置的数量等于或小于 在正常操作下存储在第一存储装置中的数据可以迁移到第二存储装置,在正常操作下存储在第一存储装置中的数据被复制到第二存储装置,并且指示第一存储装置的信息 存储系统可以从计算机系统中删除输出。

    COMPUTER SYSTEM, STORAGE SYSTEM AND CONFIGURATION MANAGEMENT METHOD
    47.
    发明申请
    COMPUTER SYSTEM, STORAGE SYSTEM AND CONFIGURATION MANAGEMENT METHOD 有权
    计算机系统,存储系统和配置管理方法

    公开(公告)号:US20100050012A1

    公开(公告)日:2010-02-25

    申请号:US12255297

    申请日:2008-10-21

    IPC分类号: G06F12/06 G06F11/14

    摘要: Maintenance storage system by storage system is enabled, and the removal or replacement of a storage system is enabled while continuing the operation of a system.In a computer system including a first storage system having a plurality of first storage devices and a second storage system having a plurality of second storage devices, when the number of the first storage devices under normal operation in the first storage system is equal to or smaller than a predetermined threshold, and data stored in the first storage devices under normal operation can be migrated to the second storage devices, the data stored in the first storage devices under normal operation are duplicated to the second storage devices, and information indicating that the first storage system can be removed from the computer system is output.

    摘要翻译: 启用存储系统的维护存储系统,并且在继续操作系统的同时启用存储系统的删除或更换。 在包括具有多个第一存储装置的第一存储系统和具有多个第二存储装置的第二存储系统的计算机系统中,当在第一存储系统中正常操作的第一存储装置的数量等于或小于 在正常操作下存储在第一存储装置中的数据可以迁移到第二存储装置,在正常操作下存储在第一存储装置中的数据被复制到第二存储装置,并且指示第一存储装置的信息 存储系统可以从计算机系统中删除输出。

    Storage system and snapshot configuration migration method
    48.
    发明申请
    Storage system and snapshot configuration migration method 有权
    存储系统和快照配置迁移方法

    公开(公告)号:US20090193206A1

    公开(公告)日:2009-07-30

    申请号:US12076177

    申请日:2008-03-14

    IPC分类号: G06F12/16

    摘要: A migration controller 4C creates, inside a migration-destination storage controller 2, a migration-destination volume 7A, a migration-destination snapshot volume 7B and a pool 7C corresponding to a migration-source volume 5A, a migration-source snapshot volume 5B, and a pool 5C, respectively. The migration controller 4C reproduces an update history of a migration-targeted generation as a write process of difference data to the migration-destination volume 7A. The migration-destination storage controller 2 constructs the migration-destination snapshot volume 7B in accordance with the update of the migration-destination volume 7A.

    摘要翻译: 迁移控制器4C在迁移目的地存储控制器2内创建与迁移源卷5A相对应的迁移目的地卷7A,迁移目的地快照卷7B和池7C,迁移源快照卷5B, 和泳池5C。 迁移控制器4C将迁移目的地生成的更新历史作为差异数据的写入处理再现到迁移目的地卷7A。 迁移目的地存储控制器2根据迁移目的地卷7A的更新来构建迁移目的地快照卷7B。

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
    49.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20090039427A1

    公开(公告)日:2009-02-12

    申请号:US12251536

    申请日:2008-10-15

    IPC分类号: H01L29/78

    摘要: A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel FET has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel FET to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel FET. The tensile stress in the flow direction of the drain current in the channel forming region of the n channel FET is greater than a tensile stress in the direction of flow of a drain current in the channel forming region of the p channel FET.

    摘要翻译: 半导体器件包括n沟道导电型FET,其具有形成在半导体衬底的主表面上的第一区域中的沟道形成区域和形成在主表面的第二区域中的沟道形成区域的ap沟道导电型FET, 第二区域与第一区域不同。 n沟道FET的栅电极的杂质浓度的杂质浓度大于p沟道FET的栅电极的杂质浓度,从而在沟道形成区域中的漏极电流的流动方向产生拉伸应力 的n沟道FET。 n沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力大于p沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力。

    Storage system that transfers system information elements
    50.
    发明申请
    Storage system that transfers system information elements 有权
    传输系统信息元素的存储系统

    公开(公告)号:US20090037555A1

    公开(公告)日:2009-02-05

    申请号:US12068088

    申请日:2008-02-01

    IPC分类号: G06F15/167 G06F17/30

    摘要: A first storage system that has a first storage device comprises a first interface device that is connected to a second interface device that a second storage system has. A first controller of the first storage system reads system information elements of first system information (information relating to the constitution and control of the first storage system) from a first system area (a storage area that is not provided for the host of the first storage device) and transfers the system information elements or modified system information elements to the second storage system via the first interface device. The system information elements are recorded in a second system area in a second storage device that the second storage system has.

    摘要翻译: 具有第一存储设备的第一存储系统包括连接到第二存储系统具有的第二接口设备的第一接口设备。 第一存储系统的第一控制器从第一系统区域(不为第一存储器的主机提供的存储区域)读取第一系统信息的系统信息(与第一存储系统的结构和控制有关的信息) 设备),并且经由第一接口设备将系统信息元素或修改的系统信息元素传送到第二存储系统。 系统信息元素被记录在第二存储系统所具有的第二存储装置中的第二系统区域中。