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    Manufacturable multi-emitter laser diode
    42.
    发明授权
    Manufacturable multi-emitter laser diode 有权

    公开(公告)号：US10566767B2

    公开(公告)日：2020-02-18

    申请号：US15351326

    申请日：2016-11-14

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Dan Steigerwald ,  Melvin McLaurin ,  Eric Goutain ,  Alexander Sztein ,  Po Shan Hsu ,  Paul Rudy ,  James W. Raring

    IPC: H01S5/40 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/042 ,  H01S5/00

    Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

    Magnesium based gettering regions for gallium and nitrogen containing laser diode devices
    43.
    发明授权
    Magnesium based gettering regions for gallium and nitrogen containing laser diode devices 有权

    公开(公告)号：US10566766B1

    公开(公告)日：2020-02-18

    申请号：US16219689

    申请日：2018-12-13

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass

    IPC: H01S5/32 ,  H01S5/343 ,  H01S5/323

    Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

    Manufacturable laser diode
    45.
    发明授权
    Manufacturable laser diode 有权

    公开(公告)号：US10367334B2

    公开(公告)日：2019-07-30

    申请号：US15176076

    申请日：2016-06-07

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  Dan Steigerwald ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/40 ,  H01S5/30 ,  H01L23/00 ,  H01S5/022 ,  H01S5/323 ,  H01S5/22

    Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

    Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode
    47.
    发明授权
    Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode 有权

    公开(公告)号：US10297979B1

    公开(公告)日：2019-05-21

    申请号：US15961759

    申请日：2018-04-24

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Po Shan Hsu ,  Melvin McLaurin ,  Thiago P. Melo ,  James W. Raring

    IPC: H01S5/343 ,  H01S5/20 ,  H01S5/042 ,  H01S5/30 ,  H01S5/22

    Abstract: In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H2 gas.

    Lidar systems including a gallium and nitrogen containing laser light source
    48.
    发明授权
    Lidar systems including a gallium and nitrogen containing laser light source 有权

    公开(公告)号：US10222474B1

    公开(公告)日：2019-03-05

    申请号：US15841053

    申请日：2017-12-13

    Applicant: Soraa Laser Diode, Inc.

    Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Vlad Novotny

    IPC: G01S17/89 ,  G01S17/10 ,  G01S7/481 ,  F21K9/64 ,  H01S5/00 ,  H01S5/024 ,  F21V29/70 ,  G01S7/487

    Abstract: The present disclosure provides a mobile machine including a laser diode based lighting system having an integrated package holding at least a gallium and nitrogen containing laser diode and a wavelength conversion member. The gallium and nitrogen containing laser diode is configured to emit a first laser beam with a first peak wavelength. The wavelength conversion member is configured to receive at least partially the first laser beam with the first peak wavelength to excite an emission with a second peak wavelength that is longer than the first peak wavelength and to generate the white light mixed with the second peak wavelength and the first peak wavelength. The mobile machine further includes a light detection and ranging (LIDAR) system configured to generate a second laser beam and manipulate the second laser beam to sense a spatial map of target objects in a remote distance.

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