公开(公告)号：US20200091076A1

公开(公告)日：2020-03-19

申请号：US16132906

申请日：2018-09-17

Applicant: Texas Instruments Incorporated

Inventor： Woochan Kim ,  Mutsumi Masumoto ,  Kengo Aoya ,  Vivek Kishorechand Arora ,  Anindya Poddar

IPC: H01L23/538 ,  H01L23/373 ,  H01L21/56 ,  H01L23/498

Abstract: Packaged electronic devices and integrated circuits include a ceramic material or other thermally conductive, electrically insulating substrate with a patterned electrically conductive feature on a first side, and an electrically conductive layer on a second side. The IC further includes a semiconductor die mounted to the substrate, the semiconductor die including an electrically conductive contact structure, and an electronic component, with an electrically insulating lamination structure enclosing the semiconductor die, the frame and the thermal transfer structure. A redistribution layer with a conductive structure is electrically connected to the electrically conductive contact structure.

公开(公告)号：US10580722B1

公开(公告)日：2020-03-03

申请号：US16134924

申请日：2018-09-18

Applicant: Texas Instruments Incorporated

Inventor： Anindya Poddar ,  Thomas Dyer Bonifield ,  Woochan Kim ,  Vivek Kishorechand Arora

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/62 ,  H01L29/00 ,  H01L23/552 ,  H01L23/544 ,  H01L23/495 ,  H01L23/532

Abstract: Described herein is a technology or a method for fabricating a flip-chip on lead (FOL) semiconductor package. A lead frame includes an edge on surface that has a geometric shape that provides a radial and uniform distribution of electric fields. By placing the formed geometric shape along an active die of a semiconductor chip, the electric fields that are present in between the lead frame and the semiconductor chip are uniformly concentrated.

公开(公告)号：US10580715B2

公开(公告)日：2020-03-03

申请号：US16008119

申请日：2018-06-14

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Woochan Kim ,  Masamitsu Matsuura ,  Mutsumi Masumoto ,  Kengo Aoya ,  Hau Thanh Nguyen ,  Vivek Kishorechand Arora ,  Anindya Poddar

IPC: H01L23/10 ,  H01L23/34 ,  H01L23/367 ,  H01L21/56 ,  H01L23/00 ,  H01L23/373

Abstract: The disclosed principles provide a stress buffer layer between an IC die and heat spreader used to dissipate heat from the die. The stress buffer layer comprises distributed pairs of conductive pads and a corresponding set of conductive posts formed on the conductive pads. In one embodiment, the stress buffer layer may comprise conductive pads laterally distributed over non-electrically conducting surfaces of an embedded IC die to thermally conduct heat from the IC die. In addition, such a stress buffer layer may comprise conductive posts laterally distributed and formed directly on each of the conductive pads. Each of the conductive posts thermally conduct heat from respective conductive pads. In addition, each conductive post may have a lateral width less than a lateral width of its corresponding conductive pad. A heat spreader is then formed over the conductive posts which thermally conducts heat from the conductive posts through the heat spreader.