公开(公告)号：US10580715B2

公开(公告)日：2020-03-03

申请号：US16008119

申请日：2018-06-14

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Woochan Kim ,  Masamitsu Matsuura ,  Mutsumi Masumoto ,  Kengo Aoya ,  Hau Thanh Nguyen ,  Vivek Kishorechand Arora ,  Anindya Poddar

IPC分类号： H01L23/10 ,  H01L23/34 ,  H01L23/367 ,  H01L21/56 ,  H01L23/00 ,  H01L23/373

摘要： The disclosed principles provide a stress buffer layer between an IC die and heat spreader used to dissipate heat from the die. The stress buffer layer comprises distributed pairs of conductive pads and a corresponding set of conductive posts formed on the conductive pads. In one embodiment, the stress buffer layer may comprise conductive pads laterally distributed over non-electrically conducting surfaces of an embedded IC die to thermally conduct heat from the IC die. In addition, such a stress buffer layer may comprise conductive posts laterally distributed and formed directly on each of the conductive pads. Each of the conductive posts thermally conduct heat from respective conductive pads. In addition, each conductive post may have a lateral width less than a lateral width of its corresponding conductive pad. A heat spreader is then formed over the conductive posts which thermally conducts heat from the conductive posts through the heat spreader.

公开(公告)号：US11158595B2

公开(公告)日：2021-10-26

申请号：US16028741

申请日：2018-07-06

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Woochan Kim ,  Masamitsu Matsuura ,  Mutsumi Masumoto ,  Kengo Aoya ,  Hau Thanh Nguyen ,  Vivek Kishorechand Arora ,  Anindya Poddar

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L25/065 ,  H01L23/532 ,  H01L21/56 ,  H01L23/31 ,  H01L25/00 ,  H01L23/29 ,  H01L23/528 ,  H01L23/522 ,  H01L23/538 ,  H01L23/433 ,  H01L23/367

摘要： An embedded die package includes a first die having an operating voltage between a first voltage potential and a second voltage potential that is less than the first voltage potential. A via, including a conductive material, is electrically connected to a bond pad on a surface of the first die, the via including at least one extension perpendicular to a plane along a length of the via. A redistribution layer (RDL) is electrically connected to the via, at an angle with respect to the via defining a space between the surface and a surface of the RDL. A build-up material is in the space.

公开(公告)号：US20210134729A1

公开(公告)日：2021-05-06

申请号：US16669666

申请日：2019-10-31

申请人： Texas Instruments Incorporated

发明人： Woochan Kim ,  Masamitsu Matasuura ,  Mutsumi Masumoto ,  Kengo Aoya ,  Hau Thanh Nguyen ,  Vivek Kishorechand Arora ,  Anindya Poddar ,  Hideaki Matsunaga

IPC分类号： H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48

摘要： In one example, embedded die package, including a layer having an exposed boundary, wherein at least a portion of the exposed boundary comprises organic material. The package also includes at least one integrated circuit die positioned in the layer and within the exposed boundary. The package also includes a dielectric material positioned in the layer and between the at least one integrated circuit and structure adjacent the at least one integrated circuit.

公开(公告)号：US11410875B2

公开(公告)日：2022-08-09

申请号：US16225875

申请日：2018-12-19

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Hau Thanh Nguyen ,  Woochan Kim ,  Yi Yan ,  Luu Thanh Nguyen ,  Ashok Prabhu ,  Anindya Poddar ,  Masamitsu Matsuura ,  Kengo Aoya ,  Mutsumi Masumoto

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L23/31 ,  H01L23/00

摘要： An electronic device (100) includes a substrate (110) and an integrated circuit (120) provided on the substrate (110) having a surface facing away from the substrate (110). An insulating layer (150) extends over the substrate (110) and around the integrated circuit (120) to define an interface (154) between the insulating layer (150) and the integrated circuit (120). An electrically conductive via (130) is provided on the surface of the integrated circuit (120). An insulating material (140) extends over the via (130) and includes an opening (142) exposing a portion of the via (130). A repassivation member (162) extends over the insulating layer (150) and has a surface (164) aligned with the interface (154). An electrically conductive redistribution member (181) is electrically connected to the via (130) and extends over the repassivation member (162) into contact with the insulating layer (150).

公开(公告)号：US11183441B2

公开(公告)日：2021-11-23

申请号：US16808018

申请日：2020-03-03

申请人： Texas Instruments Incorporated

发明人： Woochan Kim ,  Masamitsu Matsuura ,  Mutsumi Masumoto ,  Kengo Aoya ,  Hau Thanh Nguyen ,  Vivek Kishorechand Arora ,  Anindya Poddar

IPC分类号： H01L23/10 ,  H01L23/34 ,  H01L23/367 ,  H01L21/56 ,  H01L23/00 ,  H01L23/373

摘要： The disclosed principles provide a stress buffer layer between an IC die and heat spreader used to dissipate heat from the die. The stress buffer layer comprises distributed pairs of conductive pads and a corresponding set of conductive posts formed on the conductive pads. In one embodiment, the stress buffer layer may comprise conductive pads laterally distributed over non-electrically conducting surfaces of an embedded IC die to thermally conduct heat from the IC die. In addition, such a stress buffer layer may comprise conductive posts laterally distributed and formed directly on each of the conductive pads. Each of the conductive posts thermally conduct heat from respective conductive pads. In addition, each conductive post may have a lateral width less than a lateral width of its corresponding conductive pad. A heat spreader is then formed over the conductive posts which thermally conducts heat from the conductive posts through the heat spreader.

公开(公告)号：US20190385924A1

公开(公告)日：2019-12-19

申请号：US16008119

申请日：2018-06-14

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Woochan Kim ,  Masamitsu Matsuura ,  Mutsumi Masumoto ,  Kengo Aoya ,  Hau Thanh Nguyen ,  Vivek Kishorechand Arora ,  Anindya Poddar

IPC分类号： H01L23/367 ,  H01L21/56 ,  H01L23/00

摘要： The disclosed principles provide a stress buffer layer between an IC die and heat spreader used to dissipate heat from the die. The stress buffer layer comprises distributed pairs of conductive pads and a corresponding set of conductive posts formed on the conductive pads. In one embodiment, the stress buffer layer may comprise conductive pads laterally distributed over non-electrically conducting surfaces of an embedded IC die to thermally conduct heat from the IC die. In addition, such a stress buffer layer may comprise conductive posts laterally distributed and formed directly on each of the conductive pads. Each of the conductive posts thermally conduct heat from respective conductive pads. In addition, each conductive post may have a lateral width less than a lateral width of its corresponding conductive pad. A heat spreader is then formed over the conductive posts which thermally conducts heat from the conductive posts through the heat spreader.