公开(公告)号：US20180374884A1

公开(公告)日：2018-12-27

申请号：US15634148

申请日：2017-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Yi-Hsing CHU ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146

Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The light sensing device also includes a filter element over the semiconductor substrate and aligned with the light sensing region. The filter element has a first portion and a second portion, and the first portion is between the second portion and the light sensing region. The light sensing device further includes a light shielding element over the semiconductor substrate and beside the first portion of the filter element. In addition, the light sensing device includes a dielectric element over the light shielding element and beside the second portion of the filter element. A top width of the light shielding element is greater than a bottom width of the dielectric element.

公开(公告)号：US20160163760A1

公开(公告)日：2016-06-09

申请号：US14562424

申请日：2014-12-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han TSAI ,  Kun-Huei LIN ,  Chun-Hao CHOU ,  Tzu-Hsuan HSU ,  Ching-Chun WANG ,  Kuo-Cheng LEE ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.

Abstract translation: 半导体器件包括衬底，感光器件，至少一个红外辐射感测器件，透明绝缘层，红外辐射切割层，滤色器层和红外辐射滤色器层。 光感测装置和至少一个红外辐射感测装置设置在基板中并且彼此相邻。 透明绝缘层设置在覆盖光感测装置和至少一个红外辐射感测装置的基板上。 红外辐射切割层设置在覆盖光感测装置的透明绝缘层上，用于滤除红外辐射和/或近红外辐射。 滤色器层设置在红外辐射切割层上。 红外辐射滤色器层设置在覆盖至少一个红外辐射感测装置的透明绝缘层上。