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    IMAGE SENSOR DEVICE
    1.
    发明公开
    IMAGE SENSOR DEVICE 审中-公开

    公开(公告)号：US20230387169A1

    公开(公告)日：2023-11-30

    申请号：US18362866

    申请日：2023-07-31

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

    IPC: H01L27/146 ,  H01L31/036

    CPC classification number: H01L27/1463 ,  H01L27/14683 ,  H01L27/1464 ,  H01L31/036 ,  H01L27/14629 ,  H01L27/14607

    Abstract: A device includes a plurality of photodiode regions within a semiconductor substrate, a plurality of transistors, a plurality of deep trench isolation (DTI) structures, and a plurality of isolation structures. The transistors are over a front-side surface of the semiconductor substrate. The DTI structures extend a first depth from a backside surface of the semiconductor substrate into the semiconductor substrate. The isolation structures extend a second depth from the backside surface of the semiconductor substrate into the semiconductor substrate. The second depth is less than the first depth. From a plan view, each of the plurality of isolation structures has a triangular profile at the backside surface of the semiconductor substrate.

    IMAGE SENSOR WITH HIGH QUANTAM EFFICIENCY
    2.
    发明申请
    IMAGE SENSOR WITH HIGH QUANTAM EFFICIENCY 有权

    公开(公告)号：US20220302186A1

    公开(公告)日：2022-09-22

    申请号：US17207378

    申请日：2021-03-19

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Feng-Chien HSIEH ,  Hsin-Chi CHEN ,  Kuo-Cheng LEE ,  Yun-Wei CHENG

    IPC: H01L27/146

    Abstract: The present disclosure describes an image sensor device and a method for forming the same. The image sensor device can include a semiconductor layer. The semiconductor layer can include a first surface and a second surface. The image sensor device can further include an interconnect structure formed over the first surface of the semiconductor layer, first and second radiation sensing regions formed in the second surface of the semiconductor layer, a metal stack formed over the second radiation sensing region, and a passivation layer formed through the metal stack and over a top surface of the first radiation sensing region. The metal stack can be between the passivation layer and an other top surface of the second radiation sensing region.

    INTEGRATED CIRCUIT STRUCTURE, DEVICE, AND METHOD
    3.
    发明申请
    INTEGRATED CIRCUIT STRUCTURE, DEVICE, AND METHOD 有权

    公开(公告)号：US20210327947A1

    公开(公告)日：2021-10-21

    申请号：US16850524

    申请日：2020-04-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Kun-Huei LIN ,  Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Chun-Wei CHIA

    IPC: H01L27/146

    Abstract: An IC structure includes a substrate region having a first doping type and including an upper surface, first and second regions within the substrate region, each of the first and second regions having a second doping type opposite the first doping type, and a gate conductor including a plurality of conductive protrusions extending into the substrate region in a direction perpendicular to a plane of the upper surface. The conductive protrusions are electrically connected to each other, and at least a portion of each conductive protrusion is positioned between the first and second regions.

    CMOS IMAGE SENSOR STRUCTURE WITH CROSSTALK IMPROVEMENT
    9.
    发明申请
    CMOS IMAGE SENSOR STRUCTURE WITH CROSSTALK IMPROVEMENT 有权
    CMOS图像传感器结构与CROSSTALK改进

    公开(公告)号：US20170077157A1

    公开(公告)日：2017-03-16

    申请号：US14850727

    申请日：2015-09-10

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Tsung-Han TSAI ,  Kuo-Cheng LEE ,  Yung-Lung HSU

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

    Abstract: A semiconductor device includes a substrate, a device layer, an anti-reflective coating layer, reflective structures, a composite grid structure, a passivation layer and color filters. The device layer is disposed on the substrate, in which trenches are formed in the device layer and the substrate. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed on the anti-reflective coating layer in the trenches respectively. The composite grid structure overlies the anti-reflective coating layer and the reflective structures. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer sequentially stacked on the reflective structures. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.

    Abstract translation: 半导体器件包括衬底，器件层，抗反射涂层，反射结构，复合栅格结构，钝化层和滤色器。 器件层设置在衬底上，沟槽在器件层和衬底中形成。 抗反射涂层保形地覆盖器件层，衬底和沟槽。 反射结构分别设置在沟槽中的抗反射涂层上。 复合网格结构覆盖抗反射涂层和反射结构。 复合栅格结构包括通过复合栅格结构的空穴，并且复合栅格结构包括顺序地堆叠在反射结构上的金属栅格层和电介质栅格层。 钝化层保形地覆盖复合网格结构。 滤色器分别填充空腔。

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