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    IMAGE SENSOR
    1.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20230246047A1

    公开(公告)日：2023-08-03

    申请号：US18298351

    申请日：2023-04-10

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Yin-Chieh HUANG ,  Wan-Chen HUANG ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

    Abstract: An image sensor includes a substrate, a first photosensitive unit, a second photosensitive unit, a buffer layer, a dielectric grid, a first color filter, and a second color filter. The first photosensitive unit and the second photosensitive unit are in the substrate. The buffer layer covers the substrate, the first photosensitive unit and the second photosensitive unit. The dielectric grid is over the buffer layer and between the first photosensitive unit and the second photosensitive unit. The dielectric grid has a round top surface. The first color filter is over the first photosensitive unit. The first color filter is in contact with the round top surface and the buffer layer. The second color filter is over the second photosensitive unit.

    IMAGE SENSOR
    2.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220384514A1

    公开(公告)日：2022-12-01

    申请号：US17876858

    申请日：2022-07-29

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chun-Wei CHIA ,  Chun-Hao CHOU ,  Kai-Chun HSU ,  Kuo-Cheng LEE ,  Shyh-Fann TING

    IPC: H01L27/146 ,  H01L21/28

    Abstract: An image sensor includes a semiconductor substrate, a gate dielectric layer, a gate electrode, a protection oxide film, and a nitride hard mask. The gate dielectric layer is over the semiconductor substrate. The gate electrode is over the gate dielectric layer. An entirety of a first portion of the gate dielectric layer directly under the gate electrode is of uniform thickness. The protection oxide film is in contact with a top surface of the gate electrode. The gate dielectric layer extends beyond a sidewall of the protection oxide film. The nitride hard mask is in contact with a top surface of the protection oxide film.

    POLARIZERS FOR IMAGE SENSOR DEVICES
    4.
    发明申请
    POLARIZERS FOR IMAGE SENSOR DEVICES 审中-公开

    公开(公告)号：US20200321379A1

    公开(公告)日：2020-10-08

    申请号：US16907788

    申请日：2020-06-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

    IPC: H01L27/146 ,  G02B5/30

    Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.

    FORMATION METHOD OF LIGHT SENSING DEVICE
    5.
    发明申请
    FORMATION METHOD OF LIGHT SENSING DEVICE 审中-公开

    公开(公告)号：US20200266225A1

    公开(公告)日：2020-08-20

    申请号：US16867997

    申请日：2020-05-06

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yun-Wei CHENG ,  Yi-Hsing CHU ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

    IPC: H01L27/146

    Abstract: A method for forming a light sensing device is provided. The method includes forming a light sensing region in a semiconductor substrate and forming a light shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the light shielding layer and partially removing the light shielding layer and the dielectric layer to form a light shielding element and a dielectric element. A top width of the light shielding element is greater than a bottom width of the dielectric element. The light shielding element and the dielectric element surround a recess, and the recess is aligned with the light sensing region. The method further includes forming a filter element in the recess.

    FLUORINE PASSIVATION IN A PIXEL SENSOR
    9.
    发明申请
    FLUORINE PASSIVATION IN A PIXEL SENSOR 有权

    公开(公告)号：US20240387574A1

    公开(公告)日：2024-11-21

    申请号：US18786821

    申请日：2024-07-29

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wei-Lin CHEN ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

    IPC: H01L27/146

    Abstract: Implementations described herein reduce electron-hole pair generation due to silicon dangling bonds in pixel sensors. In some implementations, the silicon dangling bonds in a pixel sensor may be passivated by silicon-fluorine (Si—F) bonding in various portions of the pixel sensor such as a transfer gate contact via or a shallow trench isolation region, among other examples. The silicon-fluorine bonds are formed by fluorine implantation and/or another type of semiconductor processing operation. In some implementations, the silicon-fluorine bonds are formed as part of a cleaning operation using fluorine (F) such that the fluorine may bond with the silicon of the pixel sensor. Additionally, or alternatively, the silicon-fluorine bonds are formed as part of a doping operation in which boron (B) and/or another p-type doping element is used with fluorine such that the fluorine may bond with the silicon of the pixel sensor.

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