公开(公告)号：US20200266225A1

公开(公告)日：2020-08-20

申请号：US16867997

申请日：2020-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Yi-Hsing CHU ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146

Abstract: A method for forming a light sensing device is provided. The method includes forming a light sensing region in a semiconductor substrate and forming a light shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the light shielding layer and partially removing the light shielding layer and the dielectric layer to form a light shielding element and a dielectric element. A top width of the light shielding element is greater than a bottom width of the dielectric element. The light shielding element and the dielectric element surround a recess, and the recess is aligned with the light sensing region. The method further includes forming a filter element in the recess.

公开(公告)号：US20250022940A1

公开(公告)日：2025-01-16

申请号：US18350429

申请日：2023-07-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Chun LU ,  Yi-Hsing CHU ,  Chia-Yi TSENG

IPC: H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: The present disclosure describes forming a semiconductor structure having an isolation layer surrounding a portion of a gate structure. The semiconductor structure includes a channel structure on a substrate, a first isolation layer on the substrate and surrounding the channel structure, and a gate structure on the channel structure and the first isolation layer. The gate structure includes a first portion having a first width and a second portion having a second width less than the first width. The semiconductor structure further includes a second isolation layer on the first isolation layer and surrounding the first portion of the gate structure.

公开(公告)号：US20240429285A1

公开(公告)日：2024-12-26

申请号：US18339549

申请日：2023-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Chun LU ,  Yi-Hsing CHU ,  Chia-Yi TSENG

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/78

Abstract: The present disclosure describes forming a semiconductor structure having an isolation layer surrounding a sloped portion of a channel structure. The semiconductor structure includes a channel structure having first, second, and third portions on a substrate. The first portion has a first width. The second portion has a second width less than the first width. The third portion has a third width less than the second width. The semiconductor structure further includes a first isolation layer on the substrate and surrounding the first portion, a second isolation layer on the first isolation layer and surrounding the second portion of the channel structure, and a gate structure on the second isolation layer and surrounding the third portion of the channel structure.

公开(公告)号：US20190273104A1

公开(公告)日：2019-09-05

申请号：US16414563

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hsing CHU ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Yin-Chieh Huang ,  Yun-Wei Cheng

IPC: H01L27/146

Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.

公开(公告)号：US20190252436A1

公开(公告)日：2019-08-15

申请号：US16391009

申请日：2019-04-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Yi-Hsing CHU ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/14685

Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a filter element over the semiconductor substrate. The light sensing device also includes a light sensing region below the filter element and a light shielding element over the semiconductor substrate and surrounding a lower portion of the filter element. The light sensing device further includes a dielectric element over the light shielding element and surrounding an upper portion of the filter element. A top width of the light shielding element and a bottom width of the dielectric element are different from each other.

公开(公告)号：US20190067356A1

公开(公告)日：2019-02-28

申请号：US15692395

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Huei LIN ,  Yin-Chieh HUANG ,  Yun-Wei CHENG ,  Yi-Hsing CHU ,  Cheng-Yuan LI ,  Chun-Hao CHOU

IPC: H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first light-sensing region and a second light-sensing region adjacent to the first light-sensing region. The image sensor device includes an isolation structure in the semiconductor substrate and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a reflective grid over the isolation structure and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a first color filter over the first light-sensing region and extending into a first trench of the reflective grid. The image sensor device includes a second color filter over the second light-sensing region and extending into the first trench to be in direct contact with the first color filter in the first trench.

公开(公告)号：US20180374884A1

公开(公告)日：2018-12-27

申请号：US15634148

申请日：2017-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Yi-Hsing CHU ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146

Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The light sensing device also includes a filter element over the semiconductor substrate and aligned with the light sensing region. The filter element has a first portion and a second portion, and the first portion is between the second portion and the light sensing region. The light sensing device further includes a light shielding element over the semiconductor substrate and beside the first portion of the filter element. In addition, the light sensing device includes a dielectric element over the light shielding element and beside the second portion of the filter element. A top width of the light shielding element is greater than a bottom width of the dielectric element.

公开(公告)号：US20150179690A1

公开(公告)日：2015-06-25

申请号：US14135042

申请日：2013-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Volume CHIEN ,  Fu-Cheng CHANG ,  Yi-Hsing CHU ,  Shiu-Ko JANGJIAN ,  Chi-Cherng JENG

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/1463 ,  H01L27/1464

Abstract: Embodiments of mechanisms for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate and an isolation structure in the semiconductor substrate. The image sensor device also includes an active region in the semiconductor substrate and surrounded by the isolation structure. The active region includes a light sensing region and a doped region, and the doped region has a horizontal length and a vertical length. A ratio of the horizontal length to the vertical length is in a range from about 1 to about 4.

Abstract translation: 提供了用于形成图像传感器装置的机构的实施例。 图像传感器装置包括半导体衬底和半导体衬底中的隔离结构。 图像传感器装置还包括半导体衬底中的有源区并被隔离结构包围。 有源区包括光感测区和掺杂区，掺杂区具有水平长度和垂直长度。 水平长度与垂直长度的比率在约1至约4的范围内。