公开(公告)号：US20170358654A1

公开(公告)日：2017-12-14

申请号：US15665276

申请日：2017-07-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Hao WANG ,  Wai-Yi LIEN ,  Shi-Ning JU ,  Kai-Chieh YANG ,  Wen-Ting LAN

IPC: H01L29/423 ,  H01L29/78 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L29/42392 ,  H01L21/31053 ,  H01L21/31144 ,  H01L21/823487 ,  H01L21/823885 ,  H01L29/0649 ,  H01L29/66666 ,  H01L29/7827

Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.